Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS BUK100-50GS QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID PD Tj RDS(ON) Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. UNIT 50 15 40 150 100 V A W ˚C mΩ General controller for driving lamps motors solenoids heaters FEATURES Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP POWER INPUT MOSFET RIG LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - TO220AB PIN DESCRIPTION 1 input 2 drain 3 source tab PIN CONFIGURATION D tab TOPFET I drain 1 23 November 1996 SYMBOL 1 P S Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VDSS VIS = 0 V VIS ID ID IDRM PD Tstg Tj Continuous off-state drain source voltage1 Continuous input voltage Continuous drain current Continuous drain current Repetitive peak on-state drain current Total power dissipation Storage temperature Continuous junction temperature2 Tmb ≤ 25 ˚C; VIS = 10 V Tmb ≤ 100 ˚C; VIS = 10 V Tmb ≤ 25 ˚C; VIS = 10 V Tmb ≤ 25 ˚C normal operation Tsold Lead temperature during soldering MIN. MAX. UNIT - 50 V 0 -55 - 11 15 9.5 60 40 150 150 V A A A W ˚C ˚C - 250 ˚C OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL VISP PARAMETER CONDITIONS MIN. MAX. UNIT 5 - V Protected drain source supply voltage VIS = 10 V - 50 V Short circuit load protection Protected drain source supply voltage4 VIS = 10 V VIS = 5 V Instantaneous overload dissipation Tmb = 25 ˚C - 20 35 0.6 V V kW 3 Protection supply voltage for valid protection Over temperature protection VDDP(T) VDDP(P) PDSM OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS IDROM EDSM Repetitive peak clamping current Non-repetitive clamping energy EDRM Repetitive clamping energy VIS = 0 V Tmb ≤ 25 ˚C; IDM = 15 A; VDD ≤ 20 V; inductive load Tmb ≤ 95 ˚C; IDM = 4 A; VDD ≤ 20 V; f = 250 Hz MIN. MAX. UNIT - 15 200 A mJ - 20 mJ MIN. MAX. UNIT - 2 kV ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. November 1996 2 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT - 2.5 3.1 K/W - 60 - K/W MIN. TYP. MAX. UNIT 50 - - V Thermal resistance Rth j-mb Junction to mounting base Rth j-a Junction to ambient in free air STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(CL)DSS Drain-source clamping voltage VIS = 0 V; ID = 10 mA V(CL)DSS Drain-source clamping voltage IDSS IDSS IDSS RDS(ON) VIS = 0 V; IDM = 1 A; tp ≤ 300 µs; δ ≤ 0.01 Zero input voltage drain current VDS = 12 V; VIS = 0 V Zero input voltage drain current VDS = 50 V; VIS = 0 V Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - - 70 V - 0.5 1 10 10 20 100 µA µA µA Drain-source on-state resistance - 65 85 100 125 mΩ mΩ IDM = 7.5 A; tp ≤ 300 µs; δ ≤ 0.01 VIS = 10 V VIS = 5 V OVERLOAD PROTECTION CHARACTERISTICS TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. SYMBOL PARAMETER CONDITIONS 1 Tmb = 25 ˚C; L ≤ 10 µH VDD = 13 V; VIS = 10 V VDD = 13 V; VIS = 10 V EDS(TO) td sc Short circuit load protection Overload threshold energy Response time Tj(TO) Over temperature protection Threshold junction temperature VIS = 10 V; from ID ≥ 1 A2 MIN. TYP. MAX. UNIT - 0.2 0.8 - J ms 150 - - ˚C INPUT CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIS(TO) IIS VISR Input threshold voltage Input supply current Protection reset voltage3 VDS = 5 V; ID = 1 mA VIS = 10 V; normal operation 1.0 2.0 1.5 0.4 2.6 2.0 1.0 3.5 V mA V VISR Protection reset voltage Tj = 150 ˚C 1.0 - - IISL V(BR)IS RIG Input supply current Input clamp voltage Input series resistance VIS = 10 V; protection latched II = 10 mA to gate of power MOSFET 1.0 11 - 2.5 13 4 5.0 - mA V kΩ 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES. 2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. 3 The input voltage below which the overload protection circuits will be reset. November 1996 3 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS TRANSFER CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 10 V; IDM = 7.5 A tp ≤ 300 µs; δ ≤ 0.01 5 9 - S ID(SC) Drain current1 VDS = 13 V; VIS = 10 V - 40 - A MIN. TYP. MAX. UNIT SWITCHING CHARACTERISTICS Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits. SYMBOL PARAMETER CONDITIONS td on Turn-on delay time VDD = 13 V; VIS = 10 V - 1 - µs tr Rise time resistive load RL = 4 Ω - 4 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 10 - µs tf Fall time resistive load RL = 4 Ω - 5 - µs td on Turn-on delay time VDD = 13 V; VIS = 10 V - 1 - µs tr Rise time inductive load IDM = 3 A - 0.5 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 15 - µs tf Fall time inductive load IDM = 3 A - 0.5 - µs REVERSE DIODE LIMITING VALUE SYMBOL PARAMETER CONDITIONS IS Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V MIN. MAX. UNIT - 15 A REVERSE DIODE CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSDS Forward voltage IS = 15 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V trr Reverse recovery time not applicable2 - - - - MIN. TYP. MAX. UNIT - 3.5 - nH - 4.5 - nH - 7.5 - nH ENVELOPE CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Ld Internal drain inductance Ld Internal drain inductance Ls Internal source inductance Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad 1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. November 1996 4 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET 120 BUK100-50GS Normalised Power Derating PD% BUK100-50GS Zth / (K/W) 10 110 100 90 D= 0.5 80 1 70 0.2 60 50 0.05 0.1 40 0.1 0.02 20 10 tp T D= 0 0 0 20 40 60 80 100 Tmb / C 120 1E-05 1E-03 t/s 1E-01 1E+01 Fig.5. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% t T 0.01 1E-07 140 Fig.2. Normalised limiting power dissipation. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) 120 tp PD 30 60 ID / A BUK100-50GS 11 110 100 90 50 80 40 10 9 8 70 7 60 50 30 40 20 6 5 30 4 20 10 10 0 0 3 0 20 40 60 80 Tmb / C 100 120 140 0 Fig.3. Normalised continuous drain current. ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V 100 D S/I =V 50 16 VDS / V 20 24 ID / A 28 32 BUK100-50GS VIS / V = 10 us S( RD 12 tp = D ) ON 8 Fig.6. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc BUK100-50GS ID & IDM / A 4 8 9 10 40 7 10 100 us 6 30 1 ms DC 10 ms 1 5 20 100 ms 10 4 Overload protection characteristics not shown 0.1 0 1 10 0 100 VDS / V 3 2 4 5 VDS / V Fig.4. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp November 1996 1 Fig.7. Typical on-state characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VIS; tp = 250 µs 5 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS RDS(ON) / Ohm 0.20 a BUK100-50GS VIS / V = 0.15 1.5 6 5 4 Normalised RDS(ON) = f(Tj) 7 8 9 1.0 10 0.10 0.5 0.05 0 0 0 20 10 40 30 50 -60 -40 -20 0 20 ID / A ID / A 80 100 120 140 Fig.11. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7.5 A; VIS = 5 V Fig.8. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VIS; tp = 250 µs 60 40 60 Tj / C BUK100-50GS td sc / ms 100 BUK100-50GS 50 10 40 30 PDSM 1 20 10 0.1 0 0 2 4 6 VIS / V 8 10 12 Fig.9. Typical transfer characteristics, Tj = 25 ˚C. ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs 12 gfs / S 0.1 PDS / kW 0.01 1 Fig.12. Typical overload protection characteristics. td sc = f(PDS); conditions: VIS ≥ 5 V; Tj = 25 ˚C. PDSM% BUK100-50GS 120 11 10 100 9 8 80 7 6 60 5 4 40 3 2 20 1 0 0 0 10 30 20 40 50 -60 ID / A Fig.10. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 10 V; tp = 250 µs November 1996 -40 -20 0 20 40 60 Tmb / C 80 100 120 140 Fig.13. Normalised limiting overload dissipation. PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb) 6 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS BUK100-50GS Energy & Time 1 II / mA 1.0 BUK100-50GS Time / ms 0.5 0.5 Tj(TO) Energy / J 0 -60 -20 20 60 100 Tmb / C 140 180 0 220 0 4 6 8 10 12 14 VIS / V Fig.17. Typical DC input characteristics, Tj = 25 ˚C. IIS = f(VIS); normal operation Fig.14. Typical overload protection characteristics. Conditions: VDD = 13 V; VIS = 10 V; SC load = 30 mΩ 20 2 ID / A BUK100-50GS BUK100-50GS IIS / mA 5 4 15 3 PROTECTION LATCHED typ. 10 2 RESET NORMAL 5 1 0 0 50 60 VDS / V 70 0 Fig.15. Typical clamping characteristics, 25 ˚C. ID = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs 4 6 8 VIS / V 10 12 14 Fig.18. Typical DC input characteristics, Tj = 25 ˚C. IISL = f(VIS); overload protection operated ⇒ ID = 0 A VIS(TO) / V 60 max. 2 2 IS / A BUK100-50GS 50 40 typ. 30 min. 1 20 10 0 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 0 120 140 Fig.16. Input threshold voltage. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V November 1996 0.2 0.4 0.6 0.8 VSD / V 1 1.2 1.4 Fig.19. Typical reverse diode current, Tj = 25 ˚C. IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs 7 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS VDD VDD = VCL RL LD t p : adjust for correct ID TOPFET D TOPFET I I D.U.T. P D D.U.T. P RI RI VIS VIS S ID measure S ID measure 0V 0V 0R1 0R1 Fig.23. Test circuit for inductive load switching times. Fig.20. Test circuit for resistive load switching times. BUK100-50GS RESISTIVE TURN-ON BUK100-50GS INDUCTIVE TURN-ON VDS VIS / V 10 10 VIS / V td on 5 tr 5 tr ID / A ID / A 90% 90% VDS / V 10% 10% 10% 0 10% 0 td on 0 10 time / us 20 0 2 4 6 8 10 time / us Fig.24. Typical switching waveforms, inductive load. VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C. Fig.21. Typical switching waveforms, resistive load. VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C. BUK100-50GS RESISTIVE TURN-OFF 15 BUK100-50GS INDUCTIVE TURN-OFF td off td off 10 VDS / V 90% 10 VDS / V VIS / V 90% tf VIS / V 5 tf 5 ID / A ID / A 90% 10% 10% 0 90% 0 0 10 time / us 20 0 Fig.22. Typical switching waveforms, resistive load. VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C. November 1996 10 time / us 20 Fig.25. Typical switching waveforms, inductive load. VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C. 8 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS Iiso normalised to 25 C EDSM% 120 110 100 1.5 90 80 70 60 50 1 40 30 20 10 0 0.5 0 20 40 60 80 Tmb / C 100 120 140 -60 -20 20 60 Tj / C 100 140 180 Fig.29. Normalised input current (normal operation). IIS/IIS25 ˚C = f(Tj); VIS = 10 V Fig.26. Normalised limiting clamping energy. EDSM% = f(Tmb); conditions: ID = 15 A; VIS = 10 V Iisl normalised to 25 C V(CL)DSS VDS VDD + 0 VDD 1.5 L ID VDS 0 - D VIS TOPFET 0 I -ID/100 1 D.U.T. P Schottky RIS S R 01 shunt 0.5 -60 Fig.27. Clamping energy test circuit, RIS = 50 Ω. EDSM = 0.5 ⋅ LID2 ⋅ V(CL)DSS /(V(CL)DSS − VDD ) 1 mA -20 20 60 Tj / C 100 140 180 Fig.30. Normalised input current (protection latched). IISL/IISL25 ˚C = f(Tj); VIS = 10 V Idss 50 VDDP(P) / V BUK100-50GS 40 100 uA max 30 10 uA typ. 20 1 uA 10 100 nA 0 0 20 40 60 80 Tj / C 100 120 140 0 4 6 VIS / V 8 10 Fig.31. Maximum drain source supply voltage for SC load protection. VDDP(P) = f(VIS); Tmb ≤ 150 ˚C Fig.28. Typical off-state leakage current. IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V. November 1996 2 9 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.32. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1996 10 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1996 11 Rev 1.300