PHILIPS BFR92AT

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR92AT
NPN 5 GHz wideband transistor
Product specification
Supersedes data of 1999 Nov 02
2000 Mar 28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
The BFR92AT uses the same crystal
as the SOT23 version: BFR92A.
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
3
fpage
1
PINNING
APPLICATIONS
RF amplifiers, mixers and oscillators
with signal frequencies up to 1 GHz.
2
Top view
PIN
MBK090
DESCRIPTION
Marking code: P2.
1
base
2
emitter
3
collector
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
25
mA
Ptot
total power dissipation
up to Ts = 75 °C; note 1
−
−
150
mW
hFE
current gain
IC = 15 mA; VCE = 10 V
40
90
−
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral
power gain
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt
−
2
−
dB
−
−
150
°C
F
noise figure
Tj
junction temperature
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 Mar 28
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
−
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Ts = 75 °C; see Fig.2; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
Rth j-s
MGU068
200
Ptot
(mW)
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Mar 28
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector leakage current IE = 0; VCB = 10 V
−
−
50
hFE
DC current gain
IC = 15 mA; VCE = 10 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.6
−
UNIT
nA
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral
power gain; note 1
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt
−
2
−
dB
IC = 5 mA; VCE = 10 V; f = 2 GHz; Γs = Γopt
−
3
−
dB
F
noise figure
Note
s 21 2
dB
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
2000 Mar 28
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
MCD074
120
MGC883
1.0
handbook, halfpage
C re
(pF)
h FE
0.8
80
0.6
0.4
40
0.2
0
0
0
10
20
0
30
I C (mA)
4
VCE = 10 V.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGC884
6
handbook, halfpage
f
T
(GHz)
4
2
0
1
10
I C (mA)
10 2
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5
Transition frequency as a function of
collector current; typical values.
2000 Mar 28
5
8
12
16
20
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
MGC885
30
MGC886
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
20
20
G
UM
MSG
GUM
10
10
0
0
5
10
15
0
20
0
5
10
15
I C (mA)
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MGC887
50
Gain as a function of collector current;
typical values.
MGC888
50
handbook, halfpage
handbook, halfpage
gain
(dB)
20
I C (mA)
gain
GUM
(dB)
GUM
40
40
MSG
MSG
30
30
20
20
10
10
Gmax
Gmax
0
0
10
102
103
f (MHz)
104
10
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
2000 Mar 28
6
102
103
f (MHz)
Gain as a function of frequency;
typical values.
104
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
MGC889
6
MGC890
6
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
4
4
IC = 15 mA
1 GHz
10 mA
500 MHz
5 mA
2
2
0
1
10
I C (mA)
0
102
10 2
103
f (MHz)
104
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
90 o
1.0
handbook, full pagewidth
1
F = 4 dB
135 o
0.5
F = 3 dB
2
45 o
0.8
0.6
F = 2 dB
0.2
180 o
0.2
0
0.4
5
0.5
1
0.2
F min = 1.6 dB
Γ opt
2
5
0o
0
5
0.2
0.5
2
135 o
45 o
1
MGC891
90 o
f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
2000 Mar 28
7
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
(4)
(2) (3)
0.2
(5)
180 o
(1)
(6)
0.2
0
0.4
5
0.5
1
0.2
2
5
0o
0
(7)
(1)
(2)
(3)
(4)
(5)
(8)
0.2
Γopt; Fmin = 2.1 dB.
F = 2.5 dB.
F = 3 dB.
F = 4 dB.
Γms; Gmax = 15.7 dB.
5
0.5
2
135 o
(6) G = 15 dB.
(7) G = 14 dB.
(8) G = 13 dB.
f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
45 o
1
MGC892
1.0
90 o
Fig.13 Common emitter noise figure circles; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
(4)
0.6
(3)
(2)
0.2
0.4
5
0.2
(1)
180 o
0.2
0
0.5
1
2
5
0o
(5)
Γopt; Fmin = 3 dB.
F = 3.5 dB.
F = 4 dB.
F = 5 dB.
Γms; Gmax = 9.1 dB.
(6) G = 8 dB.
(7) G = 7 dB.
(8) G = 6 dB.
f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
(1)
(2)
(3)
(4)
(5)
0.2
5
(6)
(7)
(8)
0.5
2
135 o
45 o
1
MGC893
90 o
Fig.14 Common emitter noise figure circles; typical values.
2000 Mar 28
0
8
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
180 o
0.2
0
0.5
0.2
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MGC894
1.0
90 o
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
50
40
30
20
3 GHz
0o
10
135 o
45 o
90 o
MGC895
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
2000 Mar 28
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
90 o
handbook, full pagewidth
3 GHz
135 o
45 o
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MGC896
VCE = 10 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
0.5
5
2
135 o
45 o
1
MGC897
1.0
90 o
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
2000 Mar 28
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2000 Mar 28
REFERENCES
IEC
JEDEC
EIAJ
SC-75
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Mar 28
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
NOTES
2000 Mar 28
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
NOTES
2000 Mar 28
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
NOTES
2000 Mar 28
15
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SCA 69
© Philips Electronics N.V. 2000
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Printed in The Netherlands
603508/02/pp16
Date of release: 2000
Mar 28
Document order number:
9397 750 06717