PD - 94919A
IRG4BC10SPbF
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Extremely low voltage drop; 1.1V typical at 2A
• S-Speed: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives, up to 2KHz in
Chopper Applications
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.10V
G
@VGE = 15V, IC = 2.0A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
available
• IGBTs optimized for specified application conditions
• Lower conduction losses than many Power
MOSFET''s
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PDTC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
14
8.0
18
18
± 20
110
38
15
-55 to +150
V
A
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
0.5
2.0(0.07)
3.3
50
Units
°C/W
g (oz)
1
07/04/07
IRG4BC10SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.64 —
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
— 1.58 1.8
IC = 8.0A
Collector-to-Emitter Saturation Voltage
— 2.05 —
IC = 14A
See Fig.2, 5
V
— 1.68 —
IC = 8.0A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-9.5
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
3.7
5.5
—
S
VCE = 100V, IC = 8.0A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
15
22
IC = 8.0A
2.4 3.6
nC
VCC = 400V
See Fig. 8
6.5 9.8
VGE = 15V
25
—
28
—
TJ = 25°C
ns
630 950
IC = 8.0A, VCC = 480V
710 1100
VGE = 15V, RG = 100Ω
0.14 —
Energy losses include "tail"
2.58 —
mJ See Fig. 9, 10, 14
2.72 4.3
24
—
TJ = 150°C,
31
—
IC = 8.0A, VCC = 480V
ns
810
—
VGE = 15V, RG = 100Ω
1300 —
Energy losses include "tail"
3.94 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
280
—
VGE = 0V
30
—
pF
VCC = 30V
See Fig. 7
4.0
—
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
Pulse width 5.0µs, single shot.
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC10SPbF
20
For both:
16
Load Current (A)
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink= 90°C
Gate drive as specified
Power Dissipation = 9.2 W
Clamp voltage:
80% of rated
12
Square wave:
60% of rated
voltage
8
4
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 °C
TJ = 150 °C
10
1
0.8
V GE = 15V
20µs PULSE WIDTH
1.2
1.6
2.0
2.4
2.8
3.2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
I C , Collector-to-Emitter Current (A)
I C, Collector Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
V CC = 50V
5µs
PULSEWIDTH
WIDTH
5µs PULSE
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC10SPbF
3.00
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
16
IC = 16 A
2.50
12
2.00
8
IC =
8A
IC =
4A
1.50
4
0
VGE = 15V
80 us PULSE WIDTH
25
50
75
100
125
150
1.00
-60 -40 -20
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4BC10SPbF
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
400
C, Capacitance (pF)
Cies
300
Coes
200
Cres
100
0
1
10
20
VGE , Gate-to-Emitter Voltage (V)
500
15
10
5
0
100
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
V CC = 480V
V GE = 15V
TJ = 25 °C
I C = 8.0A
0
20
40
60
80
RRGG ,, Gate
GateResistance
Resistance(Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
5
10
15
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.7
2.6
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
2.8
VCC = 400V
I C = 8A
100
RG = 100Ω
Ohm
VGE = 15V
VCC = 480V
IC = 16 A
10
IC =
8A
IC =
4A
1
0.1
-60 -40 -20
0
20
40
60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC10SPbF
RG
TJ
VCC
10
VGE
100
= Ohm
100 Ω
= 150 ° C
= 480V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
12
8
6
4
VGE = 20V
T J = 125 oC
10
2
0
0
4
8
12
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
6
16
1
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
www.irf.com
IRG4BC10SPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X IC@25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
www.irf.com
7
IRG4BC10SPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
(; $03/(
7+,6,6$ 1,5) / 27&2'( $ 66(0 %/('21:: ,17 +($ 66(0 %/</ ,1(&
,17(51$7,21$/
3$ 57 180%(5
5(&7,),(5
/2*2
'$7(&2'(
1RWH3LQDVVH P EO\OLQH S RVLWLRQ
LQG LFD WH V/HD G)UHH $ 66(0 %/ <
/ 27&2'(
<($5 :((. /,1(&
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
8
www.irf.com