IRF IRG4BH20K-L

PD -93961
IRG4BH20K-L
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard TO-262 package
VCES = 1200V
VCE(on) typ. = 3.17V
G
@VGE = 15V, IC = 5.0A
E
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
TO-262
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
I CM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6 (0.21)
2.1
–––
40
–––
Units
°C/W
g (oz)
1
8/17/00
IRG4BH20K-L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
1200 —
Emitter-to-Collector Breakdown Voltage „ 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
1.13
— 3.17
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 4.04
— 2.84
VGE(th)
Gate Threshold Voltage
3.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-10
gfe
Forward Transconductance …
2.3
3.5
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 2.5mA
4.3
IC = 5.0A
VGE = 15V
—
IC = 11A
See Fig.2, 5
V
—
IC = 5.0A , TJ = 150°C
6.5
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 1mA
—
S
VCE = 100 V, IC = 5.0A
250
VGE = 0V, VCE = 1200V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 1200V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
28
43
IC = 5.0A
4.4 6.6
nC VCC = 400V
See Fig.8
12
18
VGE = 15V
23
—
26
—
TJ = 25°C
ns
93 140
IC =5.0A, VCC = 960V
270 400
VGE = 15V, RG = 50Ω
0.45 —
Energy losses include "tail"
0.44 —
mJ See Fig. 9,10,14
0.89 1.2
—
—
µs
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50Ω
23
—
TJ = 150°C,
28
—
IC = 5.0A, VCC = 960V
ns
100 —
VGE = 15V, RG = 50Ω
620 —
Energy losses include "tail"
1.7
—
mJ See Fig. 10,11,14
7.5
—
nH Measured 5mm from package
435 —
VGE = 0V
44
—
pF
VCC = 30V
See Fig. 7
8.3
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
ƒ Repetitive rating; pulse width limited by maximum
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω,
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
junction temperature.
(See fig. 13a)
… Pulse width 5.0µs, single shot.
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
2
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IRG4BH20K-L
16
F or both:
12
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125˚ C
T sink = 90˚ C
Gate drive as specified
Clamp voltage:
80% of rated
Power Dissipation = 15W
Sq uare wav e:
60% of rated
voltage
8
4
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
10
TJ = 150 °C
1
TJ = 25 ° C
V GE = 15V
20µs PULSE WIDTH
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
10
TJ = 150 ° C
TJ = 25 ° C
V CC = 50V
5µs PULSE WIDTH
1
6
8
10
12
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BH20K-L
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
12
9
6
3
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 10 A
4.0
IC =
3.0
5A
IC = 2.5 A
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
°( )C)
TTJJ ,, Junction
Temperature
Junction Temperature
( °C
TC , Case Temperature (° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BH20K-L
VGE =
Cies =
Cres =
Coes =
0V,
f = 1MHz
Cge + Cgc , Cce SHORTED
Cgc
Cce + Cgc
C, Capacitance (pF)
600
Cies
400
200
Coes
20
VGE , Gate-to-Emitter Voltage (V)
800
VCC = 400V
I C = 11A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
10
= 960V
= 15V
= 25 ° C
= 11A
0.85
0.80
0.75
0.70
0
10
20
30
40
RG R,GGate
, GateResistance
Resistance ((Ohm)
Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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15
20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC
V GE
TJ
0.90 I C
10
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.95
5
50
Ω
RG = 50Ohm
VGE = 15V
VCC = 960V
IC = 10 A
IC =
1
5A
IC = 2.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
°( C
Junction Temperature
( °C
) )
TTJJ, ,Junction
Temperature
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BH20K-L
RG
TJ
VCC
4.0 VGE
100
Ω
= 50Ohm
= 150° C
= 960V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
5.0
3.0
2.0
VGE = 20V
T J = 125 o C
10
1.0
SAFE OPERATING AREA
1
0.0
0
2
4
6
8
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
10
1
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BH20K-L
L
D .U .T.
VC *
50V
RL =
0 - 960V
100 0V
960V
2 X [email protected]°C
480µF
960V

‚
* D river sam e type as D .U .T .; Vc = 80% of Vce(m ax)
* N ote: D ue to the 50V pow er supply, pulse w idth and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 960V

‚
ƒ

‚
90%
10%
ƒ
VC
90%
Fig. 14b - Switching Loss
t d (o ff)
10%
I C 5%
Waveforms
tf
tr
t d (o n )
t=5µs
E on
E o ff
E ts = (E o n +E o ff )
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7
IRG4BH20K-L
TO-262 Package Details
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
8
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