Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −200 V Collector-emitter voltage 2SB0928 VCEO −150 V (Base open) VEBO −6 V Collector current IC −2 A Peak collector current ICP −3 A Collector power PC 30 W Junction temperature Tj 150 °C Storage temperature Tstg −55 ∼ +150 °C Emitter-base voltage (Collector open) Ta = 25°C dissipation (6.5) 1 : Base 2 : Collector 3 : Emitter N-G1 Package −180 2SB0928A (1.5) 2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (7.6) 1 0 to 0.4 4.4±0.5 1.5+0 –0.4 4.4±0.5 • High collector-emitter voltage (Base open) VCEO • High collector power dissipation PC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.0±0.5 ■ Features 14.4±0.5 3.4±0.3 10.0±0.3 1.5±0.1 8.5±0.2 Note) Self-supported type package is also prepared 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −500 µA, IE = 0 Conditions −200 Min V Collector-emitter voltage 2SB0928 VCEO IC = −5 mA, IB = 0 −150 V (Base open) 2SB0928A VEBO IE = −500 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −200 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = −4 V, IC = 0 Forward current transfer ratio hFE1 * VCE = −10 V, IC = −150 mA 60 hFE2 VCE = −10 V, IC = −400 mA 50 VBE VCE = −10 V, IC = −400 mA VCE(sat) IC = −500 mA, IB = −50 mA Collector-emitter saturation voltage Transition frequency Max Unit −180 Emitter-base voltage (Collector open) Base-emitter voltage Typ VCE = −10 V, IC = − 0.5 A, f = 10 MHz fT −6 V −50 µA −50 µA 240 −1.0 V −1.0 40 V MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 60 to 140 100 to 240 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00010BED 1 2SB0928, 2SB0928A PC Ta (1)TC = Ta (2)With a 50 mm × 50 mm × 2 mm Al heat sink (3)Without heat sink (PC = 1.3 W) (1) IC VBE –2.0 TC = 25°C −500 −3.0 mA −2.5 mA −300 −2.0 mA −1.0 mA −100 (2) 25°C TC = 100°C –1.2 – 0.8 −1.5 mA −200 10 –1.6 −4.0 mA −3.5 mA −400 20 VCE = −10 V IB = −4.5 mA Collector current IC (A) 30 IC VCE −600 Collector current IC (A) Collector power dissipation PC (W) 40 −25°C – 0.4 − 0.5 mA (3) 0 40 80 120 0 160 Ambient temperature Ta (°C) −2 0 −4 TC = 100°C 25°C −25°C − 0.1 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −1 − 0.01 − 0.01 −10 0 – 0.2 25°C 102 −25°C 10 −1 103 102 10 − 0.1 −1 Rth t 103 (1)Without heat sink (2)With a 50 mm × 50 mm × 2 mm Al heat sink Collector current IC (A) t = 0.5 ms t = 1 ms t = 5 ms t = 300 ms –10 –100 2SB0928A – 0.01 –1 2SB0928 – 0.1 –1 000 Thermal resistance Rth (°C/W) ICP IC (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) 2 −10 Collector current IC (A) Collector current IC (A) Non repetitive pulse TC = 25°C SJD00010BED −1.0 VCE = −10 V f = 10 MHz TC = 25°C 1 − 0.01 −10 Safe operation area –1 − 0.8 fT I C VCE = −10 V − 0.1 − 0.6 104 TC = 100°C 1 − 0.01 −1 − 0.4 Base-emitter voltage VBE (V) 103 Collector current IC (A) –10 0 −12 hFE IC 104 IC / IB = 10 − 0.1 −8 Collector-emitter voltage VCE (V) VCE(sat) IC −10 −6 Transition frequency fT (MHz) 0 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL