Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment (1.0) ■ Features 0˚ to 0.15˚ 2.5±0.2 For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A 1.1±0.1 Parameter 2SB1180 Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −60 V Collector-emitter voltage 2SB1180 (Base open) 2SB1180A VCEO Emitter-base voltage (Collector open) −60 2.3±0.2 0.9±0.1 0˚ to 0.15˚ 4.6±0.4 1 −80 2SB1180A 0.75±0.1 0.4±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C 2 3 V 1: Base 2: Collector 3: Emitter I-G1 Package −80 VEBO −7 V Collector current IC −8 A Note) Self-supported type package is also prepared. Peak collector current ICP −12 A Internal Connection Collector power dissipation PC 15 W Ta = 25°C 1.3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB1180 Collector-base cutoff current (Emitter open) 2SB1180 Conditions IC = −30 mA, IB = 0 VCEO Min Typ Max −60 Unit V −80 2SB1180A ICBO 2SB1180A VCB = −60 V, IE = 0 −100 VCB = −80 V, IE = 0 −100 Emitter-base cutoff current (Collector open) IEBO VEB = −7 V, IC = 0 Forward current transfer ratio hFE1 * VCE = −3 V, IC = −4 A 2 000 hFE2 VCE = −3 V, IC = −8 A 500 Collector-emitter saturation voltage VCE(sat) IC = −4 A, IB = −8 mA Base-emitter saturation voltage VBE(sat) IC = −4 A, IB = −8 mA µA −2 mA 10 000 −1.5 V −2 V fT VCE = −3 V, IC = −1 A, f = 1 MHz 20 Turn-on time ton IC = −4 A, IB1 = −8 mA, IB2 = 8 mA 0.5 µs Storage time tstg VCC = −50 V 2.0 µs 1.0 µs Transition frequency Fall time tf MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q P 2 000 to 5 000 4 000 to 10 000 Publication date: March 2003 SJD00056AED 1 2SB1180, 2SB1180A PC Ta IC VCE Collector-emitter saturation voltage VCE(sat) (V) −100 TC=25˚C (1)TC=Ta (2)Without heat sink (PC=1.3W) (1) 5 −4 –0.8mA –0.6mA –0.4mA −2 –0.2mA (2) 0 40 80 120 0 160 Ambient temperature Ta (°C) −1 0 (3) (2) (1) −1 −10 −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C −1 TC=–25˚C 25˚C 100˚C −1 − 0.1 − 0.1 −10 −10 −100 (1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25˚C −10 (1) (2) (3) −1 − 0.1 − 0.1 −10 −1 −10 Collector current IC (A) Safe operation area −100 104 IE=0 f=1MHz TC=25˚C 103 Collector current IC (A) 103 Collector current IC (A) 2 −1 −1 Collector current IC (A) Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE 25˚C –25˚C −1 − 0.1 − 0.1 Cob VCB VCE=–3V 104 102 − 0.1 –25˚C VBE(sat) IC −10 hFE IC TC=100˚C −5 IC/IB=500 Collector current IC (A) 105 −4 −1 VBE(sat) IC −10 − 0.1 − 0.1 −3 25˚C TC=100˚C Collector-emitter voltage VCE (V) VCE(sat) IC −100 −2 Base-emitter saturation voltage VBE(sat) (V) 0 −10 102 Non repetitive pulse TC=25˚C ICP −10 IC t=1ms t=10ms −1 t=300ms − 0.1 10 1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) SJD00056AED − 0.01 −1 −10 2SB1180A 10 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA −6 IC/IB=500 2SB1180 15 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC −8 20 −100 −1 000 Collector-emitter voltage VCE (V) 2SB1180, 2SB1180A Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00056AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL