BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 12° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC 94 8638-1 with APPLICATIONS • Detector in electronic control and drive circuits DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) 1.0 ± 12 450 to 1040 BPW17N Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW17N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector emitter voltage TEST CONDITION VCEO 32 V Emitter collector voltage VECO 5 V IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 55 °C PV 100 mW Collector current Collector peak current Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤3s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 370 For technical questions, contact: [email protected] Document Number: 81516 Rev. 1.7, 08-Sep-08 BPW17N Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors PV - Power Dissipation (mW) 125 100 75 RthJA = 450 K/W 50 25 0 0 94 8308 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 32 TYP. MAX. UNIT VCE = 20 V, E = 0 ICEO 1 200 nA Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 8 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Collector light current Ica 1.0 mA Collector emitter breakdown voltage Collector emitter dark current V 0.5 Angle of half sensitivity ϕ ± 12 deg Wavelength of peak sensitivity λp 825 nm λ0.1 450 to 1040 nm Range of spectral bandwidth Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 4.8 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5.0 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 120 kHz Collector emitter saturation voltage 0.3 V µs Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 0 40 60 80 1.4 1.2 1.0 0.8 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81516 Rev. 1.7, 08-Sep-08 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 0.6 20 94 8235 1.8 94 8239 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 371 BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 12 ton / toff -Turn on / Turn off Time (µs) 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.1 λ = 950 nm Ee = 1 mW/cm 2 1 0.5 mW/cm 2 0.2 1 mW/cm 2 10 toff 2 ton 0 V CE - Collector Emitter Voltage (V) 8 4 16 12 I C - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 400 100 600 800 1000 λ - Wavelength (nm) 94 8241 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 20 10° 20° 30° Srel - Relative Radiant Sensitivity CCEO - Collector Emitter Capacitance (pF) 4 f = 1 MHz 16 12 8 4 40° 1.0 0.9 50° 0.8 60° 0.7 70° ϕ - Angular Displacement Ica - Collector Light Current (mA) 10 94 8242 6 94 8238 Fig. 4 - Collector Light Current vs. Irradiance 0.1 0.1 8 10 1 Ee - Irradiance (mW/cm2) 94 8313 V CE = 5 V RL = 100 Ω λ = 950 nm 10 0 0.001 0.01 S ( λ)rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 10 80° 0 0.1 94 8240 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.com 372 0.6 0.4 0.2 0 94 8243 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81516 Rev. 1.7, 08-Sep-08 BPW17N Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors ± 0.15 PACKAGE DIMENSIONS in millimeters 2.4 R1 .65 E 3.3 C ± 0.15 ± 0.1 1.55 (2) ± 0.3 2.9 ± 0.3 1.8 ± 0.1 Area not plane 0.5 + 0.2 - 0.1 0.4 + 0.15 1.5 ± 0.25 3.4 29.8 ± 0.5 Chip position technical drawings according to DIN specifications 2.54 nom. 6.544-5042.01-4 Issue:1; 01.07.96 96 12187 Document Number: 81516 Rev. 1.7, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 373 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1