Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications. PINNING - TO220AB PIN gate 2 collector 3 emitter tab SYMBOL PARAMETER VCE IC Ptot VCEsat Eoff Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss PIN CONFIGURATION DESCRIPTION 1 BUK856-800A MAX. UNIT 800 24 125 3.5 1.0 V A W V mJ SYMBOL c tab g collector 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VCE VCGR ±VGE IC IC ICLM Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature ICM Ptot Tstg Tj MIN. MAX. UNIT RGE = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tj ≤ Tjmax. VCL ≤ 500 V Tj ≤ Tjmax. -5 - 800 800 30 24 12 40 V V V A A A - 50 A Tmb = 25 ˚C - - 55 - 125 150 150 W ˚C ˚C CONDITIONS TYP. MAX. UNIT - 1.0 K/W 60 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient March 1993 In free air 1 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CES Collector-emitter breakdown voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Gate emitter leakage current Collector-emitter saturation voltage VGE = 0 V; IC = 0.25 mA 800 - - V VCE = VGE; IC = 1 mA VCE = 800 V; VGE = 0 V; Tj = 25 ˚C 3 - 4 10 5.5 200 V µA VCE = 800 V; VGE = 0 V; Tj =125 ˚C - 0.2 1 mA VCE = -5 V; VGE = 0 V VGE = ±30 V; VCE = 0 V VGE = 15 V; IC = 12 A VGE = 15 V; IC = 24 A - 0.1 10 2.4 3.1 5 100 3.5 - mA nA V V MIN. TYP. MAX. UNIT VGE(TO) ICES ICES IECS IGES VCEsat DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfe Forward transconductance VCE = 15 V; IC = 6 A 3 7 - S Cies Coes Cres Input capacitance Output capacitance Feedback capacitance VGE = 0 V; VCE = 25 V; f = 1 MHz - 900 85 30 1250 120 50 pF pF pF td on tr Eon Turn-on delay time Turn-on rise time Turn-on Energy Loss IC = 12 A; VCC = 500 V; VGE = 15 V; RG = 25Ω; Tj = 25˚C; - 25 45 0.6 - ns ns mJ td off tf Eoff Turn-off delay time Turn-off fall time Turn-off Energy Loss Inductive Load Energy Losses include all ’tail’ losses - 230 200 0.5 350 400 1 ns ns mJ td on tr Eon Turn-on delay time Turn-on rise time Turn-on Energy Loss IC = 12 A; VCC = 500 V; VGE = 15 V; RG = 25Ω; Tj = 125˚C; - 25 45 0.6 - ns ns mJ td off tf Eoff Turn-off delay time Turn-off fall time Turn-off Energy Loss Inductive Load Energy Losses include all ’tail’ losses - 300 400 1 450 800 2 ns ns mJ March 1993 2 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) 1E+01 BUK856-800A Zth j-mb / (K/W) 50 D= 1E+00 IC / A BUK8Y6-800A 20 15 10 40 9 0.5 30 0.2 0.1 0.05 1E-01 8 20 0.02 PD 1E-02 0 tp D= 1E-05 1E-03 t/s 10 VGE / V = 6 t T 1E-03 1E-07 7 tp T 0 1E-01 Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T 120 15 10 VCE / V 20 Fig.4. Typical output characteristics, Tj=25 ˚C. IC=f(VCE); parameter VGE Normalised Power Derating PD% 5 0 1E+01 50 IC / A BUK8Y6-800A 110 VGE / V = 100 90 15 10 40 80 70 30 60 50 20 40 30 10 20 10 0 0 0 20 40 60 80 100 Tmb / C 120 140 0 IC / A 6 Fig.5. Typical on-state characteristics IC=f(VCE); parameters Tj,VGE Fig.2. Normalised power dissipation. PD% = 100.PD/PD 25˚C = f(Tmb) 100 1 Tj / C = 25 150 3 5 2 4 VCEsat / V BUK8y6-800 50 I CLM IC / A Tj / C = 25 150 BUK8Y6-800A 40 10 30 20 1 10 0.1 0 200 400 600 VCE / V 800 0 1000 0 Fig.3. Turn-off Safe Operating Area conditions: Tj ≤ Tjmax. ; RG = 50 Ω March 1993 2 4 6 VGE / V 8 10 12 Fig.6. Typical transfer characteristics IC=f(VGE) ; conditions: VCE=15 V; parameter Tj 3 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) gfe / S 15 BUK8Y6-800A BUK856-800A C / pF 10000 10 1000 5 100 BUK8Y6-800A Cies Coes Cres 0 10 0 30 20 10 50 40 10 0 20 IC / A Fig.7. Typical transconductance, Tj = 25 ˚C. gfe = f(IC); conditions: VCE = 15 V 16 VGE / V 30 VDS / V 40 Fig.10. Typical capacitances, Cies, Coes, Cres. C = f(VCE); conditions: VGE = 0 V; f = 1MHz. BUK8Y6-800A 15 dVCE/dt (V/ns) BUK8Y6-800A 14 12 10 10 8 6 5 4 2 0 10 0 20 30 QG / nC 0 50 40 60 t / ns 1000 100 Rg / Ohm Fig.11. Typical turn-off dVCE/dt vs. RG conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C Fig.8. Typical turn-on gate-charge characteristics. VGE = f(QG); conditions: IC = 12 A; parameter VCE 600 10 1 BUK8Y6-800A 1.5 E / mJ BUK8Y6-800A 500 1 400 300 td(off) tf 200 E(on) E(off) 0.5 100 0 0 0 20 40 60 80 Tj / C 100 120 0 140 40 60 80 Tj / C 100 120 140 Fig.12. Typical Switching losses vs. Tj conditions: IC = 12 A; VCL = 500 V; RG = 25 Ω Fig.9. Typical Switching Times vs. Tj conditions: IC = 12 A; VCL = 500 V; RG = 25 Ω March 1993 20 4 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) 10000 BUK856-800A BUK8Y6-800A t / ns 4 td(off) E(off) / mJ BUK8Y6-800A 3 1000 tf 2 100 1 10 10 1 0 1000 100 10 1 Fig.13. Typical Switching Times vs. RG conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C 500 1000 100 Rg / Ohm Rg / Ohm t / ns Fig.16. Typical Energy loss at turn-off vs. RG conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C 4 BUK8Y6-800A tf 400 BUK8Y6-800A E(off) / mJ VCL / V = 500 3 400 td(off) 300 2 300 200 1 100 0 0 0 10 20 10 0 30 IC / A 20 IC / A 30 40 Fig.17. Typical Energy loss at turn-off vs. IC conditions: VCL = 500 V; RG = 25 Ω; Tj = 125˚C; parameter VCL Fig.14. Typical Switching Times vs. IC conditions: VCL = 500 V; RG = 25 Ω; Tj = 125˚C I VCC = VCL IC 90% tr Lc t p : adjust for correct Ic tf 10% V D.U.T. td(on) VGE td(off) t VCE 90% RG tc VGE 10% IC measure 0V t 0R1 Fig.15. Test circuit for inductive load switching times. March 1993 Fig.18. Inductive Load Switching Times definitions. 5 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.19. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". March 1993 6 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 7 Rev 1.000