Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. BUX VCESM VCEO Collector-emitter voltage peak value Collector-emitter voltage (open base) VBE = 0 V VCESAT IC ICM Ptot tf Collector-emitter saturation voltage Collector current (DC) Collector current peak value Total power dissipation Fall time IC = 0.2 A; IB = 20 mA PINNING - SOT82 PIN - 87P 800 400 1000 450 0.28 Tmb ≤ 25 ˚C IC = 0.2 A; IB(on) = 20 mA PIN CONFIGURATION 86P 1 0.5 1 42 - emitter 2 collector 3 base V V V A A W µs SYMBOL DESCRIPTION 1 UNIT c b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. BUX VCESM VCEO Collector-emitter voltage peak value Collector-emitter voltage (open base) VEBO IC ICM IB IBM -IBM Ptot Tstg Tj Emitter-base voltage (open collector) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C -40 - MAX. 86P 87P 800 400 1000 450 5 0.5 1 0.2 0.3 0.3 42 150 150 UNIT V V V A A A A A W ˚C ˚C 1 Turn-off current. November 1995 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient CONDITIONS TYP. MAX. UNIT - 3 K/W 100 - K/W MIN. TYP. MAX. UNIT - - 100 1.0 µA mA 26 400 450 50 - 1 0.8 1 1 125 - mA V V V TYP. MAX. UNIT 0.25 2 0.28 - 0.5 3.5 1.3 µs µs µs µs in free air STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER ICES ICES VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 5 V; IC = 0 A Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA IC = 0.2 A; IB = 20 mA Base-emitter saturation voltage IC = 0.2 A; IB = 20 mA DC current gain IC = 50 mA; VCE = 5 V Collector-emitter sustaining voltage IC = 100 mA; BUX86P IBoff = 0; L = 25 mH BUX87P IEBO VCEsat VCEsat VBEsat hFE VCEOsust CONDITIONS V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ton ts tf tf PARAMETER CONDITIONS Switching times (resistive load). IC = 0.2 A; IBon = 20 mA; -IBoff = 40 mA; VCC = 250 V Turn-on time Turn-off storage time Turn-off fall time Turn-off fall time November 1995 Tmb = 95 ˚C 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P VCC Zth / (K/W) bux86p 10 0.5 RL 1 0.2 VIM RB 0.1 0 T.U.T. 0.1 tp tp PD 0.05 D= tp T 0.02 t T D= 0 T 0.01 1.0E-06 0.0001 0.01 1 t/s Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Fig.1. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon 90 % VBESAT / V 90 % BUX86P 0.9 IC = 0.2 A 0.1 A 50 mA IC 0.8 10 % ts ton tf toff IBon IB 0.7 10 % tr 30ns 0.6 0 5 10 IB / mA -IBoff Normalised Power Derating PD% 20 Fig.5. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC Fig.2. Switching times waveforms with resistive load. 120 15 VCESAT / V BUX86P 10 110 100 90 8 80 70 IC = 50 mA 0.1 A 0.2 A 6 60 50 4 40 30 2 20 10 0 0 20 40 60 80 100 Tmb / C 120 0 140 Fig.3. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f (Tmb) November 1995 0 5 10 15 IB / mA 20 25 30 Fig.6. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor hFE 1000 BUX86P BUX87P BUX86P Typical gain Limit gain VCE=5V Tj=25 C 10 IC / A BUX87P 100 = 0.01 1 ICM max IC max 10 1 0.001 0.01 0.1 1 II 0.1 IC / A tp = Fig.7. Typical DC current gain. hFE = f(IC); parameter VCE. Arrows indicate conditions protected by 100% test. 1 ms I hFE 1000 10 ms 0.01 BUX86P DC Typical gain Limit gain VCE=5V Tj=95 C 100 0.001 10 10 100 VCE / V 1000 Fig.10. Forward bias safe operating area. Tmb = 25 ˚C 1 0.001 0.01 0.1 I II NB: 1 IC / A Fig.8. Typical DC current gain. hFE = f(IC); parameter VCE hFE 1000 Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. BUX86P Typical gain Limit gain VCE=5V Tj= -40 C 100 10 1 0.001 0.01 IC / A 0.1 1 Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE November 1995 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P MECHANICAL DATA Dimensions in mm Net Mass: 0.8 g 2.8 2.3 mounting base 7.8 max 3.75 3.1 2.5 1) 2.54 max 11.1 max 1.2 15.3 min 1 2 3 0.5 4.58 2.29 0.88 max 1) Lead dimensions within this zone uncontrolled. Fig.11. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Rev 1.100