FDD5614P 60V P-Channel PowerTrench® MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V Applications • Fast switching speed • DC/DC converter • High performance trench technology for extremely RDS(ON) = 130 mΩ @ VGS = –4.5 V low RDS(ON) • Power management • Load switch • High power and current handling capability S D G G S TO-252 D Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current –15 –45 A W – Continuous (Note 3) – Pulsed PD (Note 1a) Power Dissipation for Single Operation TJ, TSTG (Note 1) 42 (Note 1a) 3.8 (Note 1b) 1.6 Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5614P FDD5614P 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDD5614P Rev C1(W) FDD5614P May 2005 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = –30 V, ID = –4.5 A 90 mJ –4.5 A Off Characteristics VGS = 0 V, ID = –250 µA –60 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics ID = –250 µA, Referenced to 25°C –49 (Note 2) Gate Threshold Voltage VDS = VGS, ID = –250 µA Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4 RDS(on) Static Drain–Source On–Resistance 76 99 137 ID(on) On–State Drain Current VGS = –10 V, ID = –4.5 A ID = –3.9 A VGS = –4.5 V, VGS = –10 V,ID = –4.5 A,TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3 A VDS = –30 V, f = 1.0 MHz V GS = 0 V, VGS(th) ∆VGS(th) ∆TJ mV/°C –1 –1.6 –3 V mV/°C 100 130 185 –20 mΩ A 8 S 759 pF 90 pF 39 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –30 V, VGS = –10 V, VDS = –30V, VGS = –10 V ID = –1 A, RGEN = 6 Ω ID = –4.5 A, 7 14 ns 10 20 ns 19 34 ns 12 22 ns 15 24 nC 2.5 nC 3.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –3.2 A –1.2 V FDD5614P Rev C1(W) FDD5614P Electrical Characteristics the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% PD RDS( ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD5614P Rev C1(W) FDD5614P Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of FDD5614P Typical Characteristics 1.8 15 12 -4.5V -4.0V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = -10V -3.5V 9 6 -3.0V 3 -2.5V VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V -10V 1 0.8 0 0 1 2 3 4 0 5 2 4 Figure 1. On-Region Characteristics. 10 0.4 ID = -2.3 A ID = -4.5A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.3 0.2 TA = 125oC 0.1 TA = 25oC 0 175 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V TA = -55oC IS, REVERSE DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) o 25 C 12 125oC 9 6 3 VGS = 0V 10 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD5614P Rev C1(W) FDD5614P Typical Characteristics 1000 f = 1MHz VGS = 0 V ID = -4.5A 8 800 -30V VDS = -40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 -20V 6 4 CISS 600 400 2 200 0 0 COSS CRSS 0 4 8 12 16 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 40 50 60 Figure 8. Capacitance Characteristics. 100 40 P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms RDS(ON) LIMIT 10 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RθJA = 96°C/W TA = 25°C 30 20 10 0 0.1 1 10 100 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 96°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD5614P Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15