FDG329N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V • Fast switching speed • Low gate charge (3.3 nC typical) Applications • High performance trench technology for extremely • DC/DC converter • Power management • Load switch low RDS(ON) • High power and current handling capability. S D D 1 6 2 5 3 4 G Pin 1 SC70-6 D D Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation – Continuous Units 20 V ± 12 V (Note 1a) 1.5 A (Note 1a) 0.42 (Note 1b) 0.38 – Pulsed TJ, TSTG Ratings 6 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 300 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 333 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .29 FDG329N 7’’ 8mm 3000 units 2001 Fairchild Semiconductor International FDG329N Rev C (W) FDG329N October 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 1.5 V On Characteristics 20 ID = 250 µA,Referenced to 25°C V 13 mV/°C µA (Note 2) VDS = VGS, ID = 250 µA VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5V, gFS Forward Transconductance VDS = 5 V, ID = 1.5 A 0.4 ID = 250 µA,Referenced to 25°C ID = 1.5 A ID = 1.3 A ID = 1.5 A, TJ =125°C VDS = 5 V 0.7 –3 70 86 90 mV/°C 90 115 145 mΩ 6 A 8 S 324 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) VDS = 10 V, f = 1.0 MHz V GS = 0 V 82 pF 42 pF (Note 2) 5 10 ns 7 14 ns Turn–Off Delay Time 13 23 ns tf Turn–Off Fall Time 1.6 3 ns Qg Total Gate Charge 3.3 4.6 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 10 V, ID = 1.5 A, VGS = 4.5 V 0.95 nC 0.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 0.32 A Voltage 0.75 (Note 2) 0.32 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 300°C/W when 2 mounted on a 1in pad of 2 oz copper. b) 333°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG329N Rev C (W) FDG329N Electrical Characteristics FDG329N Typical Characteristics 2 12 3.0V 2.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 10 3.5V 8 2.0V 6 4 2 0 0 1 2 VGS = 2.0V 1.8 1.6 1.4 2.5V 1.2 3.0V 4.5V 0.8 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.22 ID = 1.5A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = 0.8 A 0.18 0.14 TA = 125 oC 0.1 0.06 o TA = 25 C 0.02 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 TA = -55oC o 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 3.5V 1 8 125oC 6 4 2 0 VGS = 0V 10 TA = 125oC 1 o 25 C 0.1 -55oC 0.01 0.001 0.0001 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG329N Rev C (W) FDG329N Typical Characteristics 5 450 VDS = 5V f = 1 MHz VGS = 0 V 10 V 4 360 CAPACITANCE (pF) V GS, GATE-SOURCE VOLTAGE (V) ID = 1.5A 15V 3 2 CISS 270 180 COSS 90 CRSS 0 1 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 10 100µs 1ms 10ms 1 100ms 1s VGS = 4.5V SINGLE PULSE RθJA = 333oC/W 0.1 DC o TA = 25 C 0.1 1 10 SINGLE PULSE RθJA = 333°C/W TA = 25°C 8 6 4 2 0 0.0000 0.0001 1 0.01 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 333°C/W 0.2 0.1 0.1 P(pk) 0.05 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDG329N Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4