www.fairchildsemi.com FS6S0965RC Fairchild Power Switch(SPS) Features Description • • • • • • • • • • The Fairchild Power Switch(SPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(SPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn on/turn off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. Wide operating frequency range up to 150Khz Internal Burst mode Controller for Stand-by mode Pulse by pulse over current limiting Over current protection(Latch mode) Over voltage protection (Auto restart mode) Over load protection(Auto restart mode) Internal thermal shutdown function(Latch mode) Under voltage lockout Internal high voltage sense FET Eternal sync terminal/Soft start TO-220-5L 1 Internal Block Diagram 3 Vref 1 Vpp=5.8/7.2V Internal Bias OSC 5 Vref Vref UVLO Burst mode controller Vfb Vth=1V S Ron Q R Vcc Vth=11V/12V Roff PWM 4 2.5R R Ifb Vref Vfb Offset Vcc Rsenese Idelay OCL OLP Vth=7.5V S Vcc Vth=30V OVP UVLO Reset (Vcc=9V) R Q Q S R Filter (130nsec) Vth=1V 2 TS D Power-on (Tj=160℃) Reset (Vcc=6.5V) Rev.1.0.0 ©2001 Fairchild Semiconductor Corporation FS6S0965RC Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-source(GND) voltage (1) Drain-Gate Voltage (RGS=1MΩ) Symbol Value Unit VDSS 650 V VDGR 650 V Gate-source (GND) Voltage VGS ±30 V Drain current pulsed (2) IDM 32.4 ADC EAS 515 mJ IAS 25 A Continuous drain current (Tc = 25°C) ID 8.1 ADC Continuous drain current (TC=100°C) ID 5.1 ADC VCC 35 V VFB −0.3 to VCC V VS_S −0.3 to 10 V Single pulsed avalanche energy (3) Single Pulsed Avalanche current Supply voltage Input Voltage Range (4) PD(Watt H/S) 155 W Derating 1.243 W/°C Operating junction temperature Tj +160 °C Operating Ambient Temperature TA −25 to +85 °C TSTG −55 to +150 °C Total Power Dissipation Storage Temperature range Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=14.5mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C 2 FS6S0965RC Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Symbol Min. Typ. Max. Unit VGS=0V, ID=250µA 650 - - V VDS=650V, VGS=0V - - 200 µA IDSS VDS=520V VGS=0V, TC=125°C - - 300 µA BVDSS Condition RDS(ON) VGS=10V, ID=1.8A - 1.0 1.2 Ω Forward transconductance (note) gfs VDS=50V, ID=1.8A - - - S Input capacitance Ciss - 1300 - - 135 - - 25 - Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time tr td(off) tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET Switching time are Essentially independent of Operating temperature) - 25 - - 75 - - 130 - - 70 - - 45 60 - 8 - - 21 - pF nS nC Note: Pulse test : Pulse width ≤ 300µS, duty 2% 1 S = ---R 3 FS6S0965RC Electrical Characteristics (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start threshold voltage VSTART VFB=GND 14 15 16 V Stop threshold voltage VSTOP VFB=GND 8 9 10 V Drain to PKG Breakdown voltage BVpkg 60HZ AC, Ta=25°C 3500 - - V Drain to Source Breakdown voltage BVdss Vdrain = 650V, Ta=25°C 650 - - V Idss Vdrain = 650V, Ta=25°C - - 300 uA FOSC - 22 25 28 kHz 0 1 3 % 0 ±5 ±10 % SENSEFET SECTION Drain to Source Leakage current OSCILLATOR SECTION Initial Frequency Voltage Stability FSTABLE 12V ≤ Vcc ≤ 23V Temperature Stability (note4) ∆FOSC -25°C ≤ Ta ≤ 85°C Maximum duty cycle DMAX - 92 95 98 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback source current IFB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback voltage VSD Vfb ≥ 6.9V 6.9 7.5 8.1 V Idelay VFB=5V 1.6 2.0 2.4 µA Over Voltage Protection VOVP Vsync ≥ 11V 27 30 33 V Over Current Latch Voltage (Note2) VOCL - 0.9 1.0 1.1 V Thermal Shutdown Temp.(Note4) TSD - 140 160 - °C Shutdown delay current PROTECTION SECTION 4 FS6S0965RC Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sync & SOFTSTART SECTION Softstart Vortage VSS Vfb=2 4.7 5.0 5.3 V ISS Vss=V 0.8 1.0 1.2 mA Sync High Threshold Voltage VSYNCH Vcc=16V,Vfb=5V - 7.2 - V Sync Low Threshold Voltage VSYNCL Vcc=16V,Vfb=5V - 5.8 - V Burst mode Low Threshold Voltage VBURL Vfb=0V 10.4 11.0 11.6 V Burst mode High Threshold Voltage VBURH Vfb=0V 11.4 12.0 12.6 V VBEN Vcc=10.5V 0.7 1.0 1.3 V IBU_PK Vcc=10.5V 0.6 0.85 1.1 V FBUR Vcc=10.5V, Vfb=0V 40 50 60 KHz IOVER - 5.28 6.0 6.72 A ISTART Vfb=GND, VCC=14V - 0.1 0.17 mA IOP Vfb=GND, VCC=16V IOP(MIN) Vfb=GND, VCC=10V - 10 15 mA IOP(MAX) Vfb=GND, VCC=28V Softstart Current BURST MODE SECTION Burst mode Enable Feedback Voltage(Note4) Burst mode Peak Current Limit(Note3) Burst mode Frequency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit(Note3) TOTAL DEVICE SECTION Start Up current Operating supply current (Note1) Note: (1) These parameters is the current flowing in the Control IC. (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) These parameters indicate Inductor Current. (4) These parameters, although guranteed at the design, are not tested in massing production. 5 FS6S0965RC Typical Performance Characteristics [mA] 0.15 Istart [mA] 10.2 Iop 10.0 0.12 9.8 0.09 9.6 0.06 9.4 0.03 9.2 9.0 0.00 -25 0 25 50 75 100 125 -25 150 0 25 Figure 1. Start Up Current vs. Temp. [V] 16.0 50 75 100 125 150 Temp Temp Figure 2. Operating Supply Current vs. Temp. Vstart [V] 9.10 15.6 Vstop 9.06 15.2 9.02 14.8 8.98 14.4 8.94 14.0 13.6 8.90 -25 0 25 50 75 100 125 150 -25 Temp [kHz] 50 75 100 125 150 Figure 4. Stop Threshold Voltage vs. Temp. Fosc [%] 96.0 25.2 95.6 24.4 95.2 23.6 94.8 22.8 94.4 22.0 Dmax 94.0 -25 0 25 50 75 100 125 Temp Figure 5. Initial Frequency vs. Temp. 6 25 Temp Figure 3. Start Threshold Voltage vs. Temp. 26.0 0 150 -25 0 25 50 75 100 Temp Figure 6. Maximum Duty vs. Temp. 125 150 FS6S0965RC Typical Performance Characteristics (Continued) [V] Voff 0.50 Ifb [mA] 1.05 1.00 0.95 0.40 0.90 0.30 0.85 0.20 0.80 0.75 0.10 -25 0 25 50 75 100 125 -25 150 0 25 50 75 Figure 7. Feedback Offset Voltage vs. Temp. [uA] 2.10 100 125 150 Temp Temp Figure 8. Feedback Source Current vs. Temp. Idelay [V] 7.60 2.02 7.56 1.94 7.52 1.86 7.48 1.78 7.44 1.70 Vsd 7.40 -25 0 25 50 75 100 125 150 Temp [V] 0 25 50 75 100 125 150 Temp Figure 9. Shutdown Delay Current vs. Temp. 5.10 -25 Vss Figure 10. Shutdown Feedback Voltage vs. Temp. [V] 31.0 5.06 30.6 5.02 30.2 4.98 29.8 4.94 29.4 Vovp 29.0 4.90 -25 0 25 50 75 100 125 Temp Figure 11. Softstart Voltage vs. Temp. 150 -25 0 25 50 75 100 125 150 Temp Figure 12. Over Voltage Protection vs. Temp. 7 FS6S0965RC Typical Performance Characteristics (Continued) [V] 11.2 Vburl Vburh [V] 12.3 12.2 11.1 12.1 12.0 11.0 11.9 10.9 11.8 11.7 10.8 -25 0 25 50 75 100 125 150 -25 0 25 [kHz] 75 100 125 150 Figure 14. Burst Mode High Voltage vs. Temp. Figure 13. Burst Mode Low Voltage vs. Temp. 53.0 50 Temp Temp Fbur [V] 1.60 51.0 Vben 1.20 49.0 0.80 47.0 0.40 45.0 0.00 43.0 -25 0 25 50 75 100 125 -25 150 0 25 50 Temp Ibur_pk [A] 100 125 150 0.95 6.10 0.92 6.00 0.89 5.90 0.86 5.80 Iover [A] 6.20 5.70 0.83 -25 0 25 50 75 100 125 150 Temp Figure 17. Burst Mode Peak Current vs. Temp. 8 75 Figure 16. Burst Mode Enable Voltage vs. Temp. Figure 15. Burst Mode Frequency vs. Temp. 0.98 Temp -25 0 25 50 75 100 125 Temp Figure 18. Peak Current Limit vs. Temp. 150 FS6S0965RC Package Dimensions TO-220-5L 4.50 ±0.20 2.80 ±0.10 1.30 ±0.10 (8.70) +0.10 1.30 –0.05 18.70 ±0.20 15.90 ±0.20 (3.00) 9.20 ±0.20 (4.60) (3.70) (1.70) ø3.60 ±0.10 9.88 ±0.20 1.10 TYP 0.80 TYP 3-1.00MAX (#2,#3,#4) 0° ) 2-1.30MAX (#1,#5) 5-0.60 ±0.10 (4 13.08 ±0.20 (0.93) #1 #2 #3 #4 #5 (0.35) +0.10 2.54TYP [2.54 ±0.20] 3-1.50TYP [3-1.50 ±0.20] 0.50 –0.05 2.40 ±0.20 10.00 ±0.20 9 FS6S0965RC Package Dimensions (Continued) TO-220-5L(Forming) 10 FS6S0965RC Ordering Information Product Number FS6S0965RC-TU FS6S0965RC-YDTU Package TO-220-5L TO-220-5L(Forming) Marking Code BVdss Rds(on) 6S0965RC 650V 1.0 TU : Non Forming Type YDTU : Forming Type 11 FS6S0965RC DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 6/8/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation