FAIRCHILD KA1M0880B-TU

www.fairchildsemi.com
KA1L0880B/KA1M0880B
Fairchild Power Switch(FPS)
Features
Description
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The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
Precision fixed operating frequency
KA1L0880B(50KHz),KA1M0880B(67KHz)
Pulse by pulse over current limiting
Over load protection
Over voltage protection (Min. 23V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Latch up mode
Soft start
TO-3P-5L
1
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
Internal Block Diagram
#3 VCC
32V
5V
Vref
Internal
bias
#1 DRAIN
SFET
Good
logic
#5 Soft Start
OSC
5V
S
R
−
#4 FB
5µA
1mA 2.5R
1R
9V
0.1V
−
+
25V
L.E.B
+
+
7.5V
−
Q
S
Thermal S/D
R
Q
#2 GND
Power on reset
OVER VOLTAGE S/D
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA1L0880B/KA1M0880B
Absolute Maximum Ratings
Parameter
Maximum Drain voltage
(1)
Drain-Gate voltage (RGS=1MΩ)
Gate-source (GND) voltage
Drain current pulsed
(2)
Single pulsed avalanche energy
Avalanche
(3)
current (4)
Symbol
Value
Unit
VD,Max
800
V
VDGR
800
V
VGS
±30
V
IDM
32.0
ADC
EAS
810
mJ
IAS
15
A
Continuous drain current (TC=25°C)
ID
8.0
ADC
Continuous drain current (TC=100°C)
ID
5.6
ADC
VCC,MAX
30
V
VFB
−0.3 to VSD
V
Maximum Supply voltage
Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature
PD
190
W
Derating
1.54
W/°C
TA
−25 to +85
°C
TSTG
−55 to +150
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, VDD=50V, RG=25Ω, starting Tj=25°C
4. L=13µH, starting Tj=25°C
2
KA1L0880B/KA1M0880B
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain source breakdown voltage
Symbol
Condition
Min.
Typ.
Max.
Unit
BVDSS
VGS=0V, ID=50µA
800
-
-
V
VDS=Max., Rating,
VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
Zero gate voltage drain current
IDSS
RDS(ON)
VGS=10V, ID=5.0A
-
1.2
1.5
Ω
Forward transconductance (note)
gfs
VDS=15V, ID=5.0A
1.5
2.5
-
S
Input capacitance
Ciss
-
2460
-
-
210
-
-
64
-
Static drain source on resistance (note)
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn on delay time
td(on)
Rise time
Turn off delay time
tr
td(off)
Fall time
tf
Total gate charge
(gate-source+gate-drain)
Qg
Gate source charge
Qgs
Gate drain (Miller) charge
Qgd
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=8.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
-
-
90
-
95
200
-
150
450
-
60
150
-
-
150
-
20
-
-
70
-
pF
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S = ---R
3
KA1L0880B/KA1M0880B
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Start threshold voltage
VSTART
-
14
15
16
V
Stop threshold voltage
VSTOP
After turn on
9
10
11
V
KA1L0880B
45
50
55
KA1M0880B
61
67
73
-
±5
±10
%
74
77
80
%
UVLO SECTION
OSCILLATOR SECTION
Initial accuracy
FOSC
Frequency change with temperature (2)
∆F/∆T
Maximum duty cycle
Dmax
−25°C ≤ Ta ≤ +85°C
kHz
FEEDBACK SECTION
Feedback source current
IFB
Ta=25°C, 0V ≤ Vfb ≤ 3V
0.7
0.9
1.1
mA
Shutdown Feedback voltage
VSD
-
6.9
7.5
8.1
V
Idelay
Ta=25°C, 5V ≤ Vfb ≤ VSD
4.0
5.0
6.0
µA
Shutdown delay current
SOFT START SECTION
Soft Start Voltage
VSS
VFB =2V
4.7
5.0
5.3
V
Soft Start Current
ISS
Sync & S/S=GND
0.8
1.0
1.2
mA
Vref
Ta=25°C
4.80
5.00
5.20
V
−25°C ≤ Ta ≤ +85°C
-
0.3
0.6
mV/°C
Max. inductor current
4.40
5.00
5.60
A
REFERENCE SECTION
Output voltage (1)
Temperature Stability
(1)(2)
Vref/∆T
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
IOVER
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1)
Over voltage protection voltage
TSD
-
140
160
-
°C
VOVP
-
23
25
28
V
TOTAL DEVICE SECTION
Start Up current
ISTART
VCC=14V
0.1
0.3
0.45
mA
Operating supply current
(control part only)
IOP
Ta=25°C
6
12
18
mA
VCC zener voltage
VZ
ICC=20mA
30
32.5
35
V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA1L0880B/KA1M0880B
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.2 Feedback Source Current
Fig.1 Operating Frequency
1.2
1.15
1.1
1.05
Fosc 1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100 125 150
1.2
1.15
1.1
1.05
Ifb 1
0.95
0.9
0.85
0.8
-25
0
25
Temperature [°C]
Figure 1. Operating Frequency
Fig.3 Operating Current
1.2
1.15
1.1
1.05
IIop
OP 1
0.95
0.9
0.85
0.8
-25
100
125 150
Fig.4 Max Inductor Current
1.1
1.05
IIpeak
over 1
0.95
0.9
0.85
0
25
50
75
100 125 150
0.8
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
Fig.5 Start up Current
Fig.6 Start Threshold Voltage
1.15
1.3
1.1
IIstart
ST 1.1
1.05
Vth(H)
Vstart 1
0.9
0.95
0.7
0.5
-25
75
Figure 2. Feedback Source Current
Temperature [°C]
1.5
50
Temperature [°C]
0.9
0
25
50
75
100 125 150
Temperature [°C]
Figure 5. Start up Current
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 6. Start Threshold Voltage
5
KA1L0880B/KA1M0880B
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.7 Stop Threshold Voltage
1.15
Fig.8 Maximum Duty Cycle
1.15
1.1
1.1
1.05
1.05
Vth(L) 1
Vstop
Dmax 1
0.95
0.95
0.9
0.9
0.85
-25
0
25
50
75
100 125 150
0.85
-25
0
Temperature [°C]
Figure 7. Stop Threshold Voltage
50
75
100 125 150
Figure 8. Maximum Duty Cycle
Fig.10 Shutdown Feedback Voltage
Fig.9 Vcc Zener Voltage
1.15
1.2
1.15
1.1
1.05
Vz 1
0.95
0.9
0.85
0.8
-25
1.1
1.05
Vsd 1
0.95
0.9
0
25
50
75
100 125 150
0.85
-25
0
Temperature [°C]
50
75
100 125 150
Figure 10. Shutdown Feedback Voltage
Fig.11 Shutdown Delay Current
1.2
1.15
1.1
1.05
Idelay 1
0.95
0.9
0.85
0.8
-25
25
Temperature [°C]
Figure 9. VCC Zener Voltage
Fig.12 Over Voltage Protection
1.15
1.1
1.05
Vovp 1
0.95
0.9
0
25
50
75
100 125 150
Temperature [°C]
Figure 11. Shutdown Delay Current
6
25
Temperature [°C]
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 12. Over Voltage Protection
KA1L0880B/KA1M0880B
Typical Performance Characteristics (Continued)
(These characteristic grahps are normalized at Ta=25°C)
Fig.13 Soft Start Voltage
Fig.14 Drain Source Turn-on
Resistance
1.15
2.5
1.1
1.05
2
Vss 1
0.95
1.5
(
Rdson )1
0.9
0.5
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 13. Soft Start Voltage
0
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 14. Static Drain Source on Resistance
7
KA1L0880B/KA1M0880B
Package Dimensions
TO-3P-5L
8
KA1L0880B/KA1M0880B
Package Dimensions
TO-3P-5L (Forming)
9
KA1L0880B/KA1M0880B
Ordering Information
Product Number
KA1L0880B-TU
KA1L0880B-YDTU
KA1M0880B-TU
KA1M0880B-YDTU
Package
TO-3P-5L
TO-3P-5L(Forming)
TO-3P-5L
TO-3P-5L(Forming)
Rating
Fosc
800V, 8A
50kHz
800V, 8A
67kHz
TU : Non Forming Type
YDTU : Forming type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
10/17/01 0.0m 001
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 2001 Fairchild Semiconductor Corporation