ROHM SH8K32

4V Drive Nch+Nch MOSFET
SH8K32
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
SOP8
Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
SH8K32
∗2
∗2
(1) (2) (3) (4)
∗1
(1)
∗1
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Limits
60
±20
±4.5
±18
1.0
18
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W/TOTAL
°C
°C
∗1 Pw 10μs, Duty cycle 1%
∗2 Mounted on a ceramic board.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/4
2009.12 - Rev.A
SH8K32
Data Sheet
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Parameter
−
60
−
1.0
−
−
−
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
46
52
55
−
500
120
55
12
18
40
13
7.0
1.6
2.5
±10
−
1
2.5
65
73
77
−
−
−
−
−
−
−
−
10
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 60V, VGS=0V
VDS= 10V, ID= 1mA
ID= 4.5A, VGS= 10V
ID= 4.5A, VGS= 4.5V
ID= 4.5A, VGS= 4.0V
VDS= 10V, ID= 4.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 30V
ID= 2.3A
VGS= 10V
RL= 13Ω
RG=10Ω
VDD 30V, VGS= 5V
ID= 4.5A
RL= 6.7Ω, RG= 10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=4.5A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.12 - Rev.A
SH8K32
Data Sheet
VDS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.001
0.0001
1.0
1.5
2.0
2.5
3.0
VGS=4.0V
VGS=4.5V
VGS=10V
100
10
0.01
0.1
1
10
VGS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
0.01
0.1
1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
0.01
10
0.1
1
10
1
0.1
0.01
0
0.5
1.0
1.5
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current(IV)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
ID=2.25A
100
1000
tf
GATE-SOURCE VOLTAGE : VGS (V)
ID=4.5A
200
10
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
Ta=25°C
Pulsed
td (off)
100
td (on)
10
tr
1
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : ID (A)
300
0
10
VGS=4V
Pulsed
SOURCE CURRENT : IS (A)
1000
0
1000
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
0.00001
0.5
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
10
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Electrical characteristic curves
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
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1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Switching Characteristics
3/4
Ta=25°C
9 VDD=30V
ID=4.5A
8
RG=10Ω
7 Pulsed
6
5
4
3
2
1
0
0
2
4
6
8
10
12
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
2009.12 - Rev.A
SH8K32
Data Sheet
CAPACITANCE : C (pF)
10000
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
Coss
Crss
10
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.10 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuits
Pulse Width
VGS
ID
VDS
D.U.T.
90%
50%
10%
VGS
RL
VDS
50%
10%
10%
RG
VDD
90%
td(on)
ton
Fig.1-1 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.1-2 Switching Time Waveforms
VG
VGS
ID
RL
D.U.T.
IG (Const.)
RG
Qg
VDS
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Test Circuit
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Fig.2-2 Gate Charge Waveform
4/4
2009.12 - Rev.A
Notice
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