TB0640M - TB3500M Green 50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR DUAL NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • 50A Peak Pulse Current @ 10/1000μs 250A Peak Pulse Current @ 8/20μs 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bidirectional Protection In a Single Device High Off-State impedance and Low On-State Voltage Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68, ITU-T K.20/K.21, and UL497B UL Listed Under Recognized Component Index, File Number 156346 Lead Free Finish/RoHS Compliant (Note 1) Green Molding Compound (No Halogen and Antimony) (Note 2) • • • • • • Bottom View Top View Maximum Ratings Case: SMB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 Polarity: None; Bidirectional Devices Have No Polarity Indicator Marking Information: See Pages 2 & 4 Ordering Information: See Page 4 Weight: 0.093 grams (approximate) @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Non-Repetitive Peak Impulse Current Symbol Value Unit Ipp 50 A ITSM 30 A ΔVBR/ΔTj 0.1 %/°C @10/1000us Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) Typical Positive Temperature Coefficient for Breakdown Voltage Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Lead Characteristic RθJL 20 °C/W Thermal Resistance, Junction to Ambient RθJA 100 °C/W Junction Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Waveform Standard Ipp (A) 2/10 us GR-1089-CORE 300 8/20 us IEC 61000-4-5 250 10/160 us FCC Part 68 150 10/700 us ITU-T, K.20/K.21 100 10/560 us FCC Part 68 75 10/1000 us GR-1089-CORE 50 IPP, PEAK PULSE CURRENT (%) Maximum Rated Surge Waveform Peak Value (Ipp) tr = rise time to peak value tp = decay time to half value Half Value tr TB0640M - TB3500M Document number: DS30361 Rev. 9 - 2 1 of 5 www.diodes.com tp September 2010 © Diodes Incorporated TB0640M - TB3500M Electrical Characteristics @TA = 25°C unless otherwise specified Maximum Rated Repetitive Off-State Voltage Maximum Off-State Leakage Current @ VDRM Maximum Breakover Voltage Maximum On-State Voltage @ IT = 1A VDRM (V) IDRM (uA) VBO (V) VT (V) TB0640M 58 5 77 TB0720M 65 5 TB0900M 75 5 TB1100M 90 TB1300M 120 TB1500M Part Number Breakover Current IBO Holding Current IH 3.5 Min (mA) 50 Max (mA) 800 Min (mA) 150 Max (mA) 800 88 3.5 50 800 150 98 3.5 50 800 150 5 130 3.5 50 800 5 160 3.5 50 800 140 5 180 3.5 50 TB1800M 160 5 220 3.5 TB2300M 190 5 265 3.5 TB2600M 220 5 300 TB3100M 275 5 TB3500M 320 5 Marking Code CO (pF) 140 T064M 800 140 T072M 800 140 T090M 150 800 90 T110M 150 800 90 T130M 800 150 800 90 T150M 50 800 150 800 90 T180M 50 800 150 800 60 T230M 3.5 50 800 150 800 60 T260M 350 3.5 50 800 150 800 60 T310M 400 3.5 50 800 150 800 60 T350M Symbol Notes: Typical Off-State Capacitance Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current VT On state voltage IPP Peak pulse current CO Off-state capacitance Note 3 Note 4 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html. 2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound. 3. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 4. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. I IPP IBO IH IBR IDRM VBR VT VDRM TB0640M - TB3500M Document number: DS30361 Rev. 9 - 2 2 of 5 www.diodes.com V VBO September 2010 © Diodes Incorporated TB0640M - TB3500M 1.2 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF-STATE CURRENT (uA) 100 10 1 0.1 VDRM = 50V 0.01 0.001 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 1 Off-State Current vs. Junction Temperature 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature 100 IT, ON-STATE CURRENT (A) NORMALIZED BREAKDOWN VOLTAGE 1.1 1.05 1 10 1 0.95 1 25 50 75 100 125 150 175 0 -50 -25 TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1.4 5 2 2.5 3.5 4.5 3 4 VT, ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage 1.5 1 1.2 NORMALIZED CAPACITANCE NORMALIZED HOLDING CURRENT 1.3 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.1 0.3 75 -25 25 50 100 125 0 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Relative Variation of Holding Current vs. Junction Temperature -50 TB0640M - TB3500M Document number: DS30361 Rev. 9 - 2 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias 3 of 5 www.diodes.com 1 September 2010 © Diodes Incorporated TB0640M - TB3500M Ordering Information (Note 5) Part Number TB0640M-13-F TB0720M-13-F TB0900M-13-F TB1100M-13-F TB1300M-13-F TB1500M-13-F TB1800M-13-F TB2300M-13-F TB2600M-13-F TB3100M-13-F TB3500M-13-F Notes: Case SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB Packaging 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW xxxxx xxxxx = Product type marking code (See table on page 2) = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year (ex: 2 for 2002) WW = Week code (01 to 53) Package Outline Dimensions B A SMB Dim Min Max A 3.30 3.94 B 4.06 4.57 C 1.96 2.21 D 0.15 0.31 E 5.00 5.59 G 0.05 0.20 H 0.76 1.52 J 2.00 2.50 All Dimensions in mm C D J H G E Suggested Pad Layout SMB Value (in mm) Dimensions Z 6.7 G 1.8 X 2.3 Y 2.5 C 4.3 TB0640M - TB3500M Document number: DS30361 Rev. 9 - 2 4 of 5 www.diodes.com September 2010 © Diodes Incorporated TB0640M - TB3500M IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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