DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low Gate Charge Low RDS(ON): • 24mΩ @VGS = 4.5V • 28mΩ @VGS = 2.5V • 34mΩ @VGS = 1.8V Low Input/Output Leakage ESD Protected up to 2kV HBM Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SOT-26 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0008 grams (approximate) • • • • • • D SOT-26 S1 G1 D1 / D2 D1 / D2 S2 G2 G1 D G2 S1 ESD PROTECTED TO 2kV Maximum Ratings Pin Configuration S2 N-Channel Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Thermal Characteristics ID IDM Value 20 ±12 6.5 5.2 30 Unit V V Value 0.85 147 -55 to +150 Unit W °C /W °C A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range Notes: N-Channel TOP VIEW TOP VIEW Symbol PD RθJA TJ, TSTG 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG6968UDM Document number: DS31758 Rev. 4 - 2 1 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968UDM @TA = 25°C unless otherwise specified Characteristic STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate-Source Breakdown Voltage Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS BVSGS VGS(th) 20 ⎯ ⎯ ±12 0.5 ⎯ 1 ±10 0.9 V μA μA V V Static Drain-Source On-Resistance (Note 5) RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 17 20 26 24 28 34 mΩ |YFS| VSD ⎯ ⎯ 8 0.7 ⎯ 1.0 S V Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 143 74 29 202 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 8.8 1.4 3.0 53 78 562 234 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resisitance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition ID = 250μA, VGS = 0V VDS = 20V, VGS = 0V VDS = 0V, VGS = ±10V VDS = 0V, IG = ±250μA VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 10V, ID = 5A IS = 2.25A, VGS = 0V VDS = 10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 5. Test pulse width t = 300ms. 6. Guaranteed by design. Not subject to production testing. 20 30 VGS = 8.0V VGS = 3.0V VGS = 4.5V 25 16 VGS = 2.5V ID, DRAIN CURRENT (A) VGS = 2.0V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 20 15 10 VGS = 1.5V VDS = 5V 12 8 TA = 150°C TA = 125°C 4 5 TA = 85°C TA = 25°C T A = -55°C 0 0.5 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG6968UDM Document number: DS31758 Rev. 4 - 2 2 1 1.5 VGS, GATE SOURCE VOLTAGE (V) 2 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com July 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 VGS = 1.8V 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.05 0.04 VGS = 4.5V TA = 150°C 0.03 TA = 125°C T A = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 30 1.6 0.05 1.4 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0 VGS = 2.5V ID = 5.5A 1.2 VGS = 4.5V ID = 6.5A 1.0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 20 VGS = 2.5V ID = 5.5A 0.03 0.02 VGS = 4.5V ID = 5.5A 0.01 0.8 0 -50 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.0 20 0.8 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG6968UDM ID = 1mA 12 0.6 ID = 250µA 0.4 0.2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS31758 Rev. 4 - 2 TA = 25°C 4 0 0 -50 DMG6968UDM 8 3 of 6 www.diodes.com 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 July 2009 © Diodes Incorporated DMG6968UDM 1,000 100,000 IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT C, CAPACITANCE (pF) f = 1MHz Ciss 100 Coss Crss 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 T A = -55°C 10 T A = 25°C 1 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.1 0.1 D = 0.05 D = 0.9 D = 0.02 RθJA(t) = r(t) * RθJA RθJA = 176°C/W D = 0.01 0.01 D = 0.005 P(pk) D = Single Pulse 0.001 0.00001 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG6968UDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 2N4 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMG6968UDM Document number: DS31758 Rev. 4 - 2 Mar 3 YM Marking Information 2N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D July 2009 © Diodes Incorporated DMG6968UDM Package Outline Dimensions A SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm NEW PRODUCT B C H K M J L D Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMG6968UDM Document number: DS31758 Rev. 4 - 2 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968UDM IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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