TOSHIBA 2SC5949

2SC5949
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5949
Power Amplifier Applications
Unit: mm
•
Complementary to 2SA2121
•
Recommended for audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
200
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
PC
220
W
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-21F1A
operating temperature/current/voltage, etc.) are within the
Weight: 9.75 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2SC5949
Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 200 V, IE = 0
―
―
5.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
―
5.0
µA
V (BR) CEO
IC = 50 mA, IB = 0
200
―
―
V
VCE = 5 V, IC = 1 A
55
―
160
hFE (2)
VCE = 5 V, IC = 8 A
35
60
―
VCE (sat)
IC = 10 A, IB = 1 A
―
0.4
3.0
V
VBE
VCE = 5 V, IC = 8 A
―
1.0
1.5
V
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
VCB = 10 V, IE = 0, f = 1 MHz
―
270
―
pF
Collector-emitter breakdown voltage
hFE (1)
DC current gain
(Note 1)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note 1: hFE(1) classification
Cob
R: 55 to 110, O: 80 to 160
Marking
Part No. (or abbreviation code)
TOSHIBA
2SC5949
Lot No.
JAPAN
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC5949
IC – VCE
Common emitter
VCE = 5 V
Common emitter
Tc = 25°C
16
(A)
500
400
300
Collector current IC
(A)
Collector current IC
IC– VBE
16
20
12
200
8
100
4
50
12
8
Tc = 100°C
25
−25
4
IB = 20 mA
0
0
2
4
6
8
Collector-emitter voltage
10
VCE
0
0
12
(V)
1.0
0.5
Tc = 100°C
100
25
50
−25
10
5
0.03
0.1
0.3
1
3
10
1
Common emitter
IC / IB = 10 V
30
0.3
Tc = 100°C
25
0.1
−25
0.05
0.03
0.01
0.03
Collector current IC (A)
0.3
0.1
fT– IC
3
10
30
Safe operating area
100
1 ms *
(A)
Collector current IC
Transition frequency fT (MHz)
1
Collector current IC (A)
100
10
Common emitter
Tc = 25°C
1
0.01
(V)
0.5
VCE (sat) (V)
Collector-emitter saturation voltage
DC current gain hFE
300
30
VBE
VCE (sat) – IC
2
Common emitter
VCE = 5 V
500
2.5
2.0
Base-emitter voltage
hFE – IC
1000
1.5
IC max (pulsed) *
10
1
1
Collector current IC (A)
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
linearly with increase in
temperature.
0.1
0.1
10
100 ms *
DC operation
Tc = 25°C
VCE = 5 V
0.1
10 ms *
IC max (continuous)
1
VCEO max
10
Collector-emitter voltage VCE
3
1000
100
(V)
2006-11-16
2SC5949
RESTRICTIONS ON PRODUCT USE
060116EAA
• The information contained herein is subject to change without notice. 021023_D
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
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