2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −3 A Base current IB −0.3 A PC 10 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC JEITA ― SC-67 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1869 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −1.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 μA V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V VCE = −2 V, IC = −0.5 A 70 ― 240 VCE = −2 V, IC = −2.5 A 30 ― ― IC = −2 A, IB = −0.2 A ― −0.3 −0.6 V Collector-emitter breakdown voltage hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage VCE (sat) Base-emitter voltage VBE VCE = −2 V, IC = −0.5 A ― −0.8 −1.0 V Transition frequency fT VCE = −2 V, IC = −0.5 A ― 100 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 35 ― pF Collector output capacitance Cob Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A1869 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1869 IC – VCE hFE – IC 1000 −3 −40 −50 −30 DC current gain hFE −2 −15 −10 −1 −4 −6 −8 Collector-emitter voltage −25 50 30 Common emitter VCE = −2 V 5 Common emitter Tc = 25°C −2 100 25 10 IB = −5 mA 0 0 Tc = 100°C 300 −20 (A) Collector current IC 500 −25 3 −0.01 −0.1 −10 −1 Collector current IC VCE (sat) – IC IC – VBE −3 Common emitter IC/IB = 10 VCE = 2 V (A) −2.5 −0.5 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter −0.3 Tc = 100°C 25 −0.1 −25 −0.05 −0.03 −2 −1.5 Tc = 100°C −1 25 −25 −0.5 −0.01 −0.01 −0.1 −1 Collector current IC −10 0 0 (mA) −0.2 −0.4 −0.6 −0.8 Base-emitter voltage −10 (A) (2) No heat sink Collector current IC 8 6 4 2 (2) 25 75 100 125 150 175 −1 −0.5 Ambient temperature Ta (°C) 10 ms* IC max (continuous) 100 ms* DC operation Tc = 25°C −0.3 −0.03 −1 200 1 ms* −3 −0.1 50 −1.4 IC max (pulsed)* −0.05 0 0 −1.2 −5 Infinite heat sink (1) PC (W) (1) Tc = Ta 10 −1 VBE (V) Safe Operating Area PC – Ta 12 Collector power dissipation (A) VCE (V) −3 −1 −10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −10 Collector-emitter voltage 3 −100 −500 VCE (V) 2006-11-09 2SA1869 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09