TOSHIBA 2SK3994

2SK3994
TOSHIBA Field-Effect Transistor
Silicon N-Channel MOS Type (π−MOS V)
2SK3994
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
z Low drain−source ON-resistance
: RDS (ON) = 90 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 10 S (typ.)
Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
z Enhancement mode
: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
250
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
250
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
20
A
Pulse (Note 1)
IDP
80
A
Drain power dissipation (Tc = 25°C)
PD
45
W
JEDEC
Single-pulse avalanche energy
(Note 2)
EAS
487
mJ
JEITA
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
TOSHIBA
—
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.06 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3994
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
—
—
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
—
V
IDSS
VDS = 250 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
—
—
V
Vth
VDS = 10 V, ID = 1 mA
3.0
—
5.0
V
Drain−source ON-resistance
RDS (ON)
VGS = 10 V, ID = 10 A
—
90
105
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
5
10
—
S
Input capacitance
Ciss
—
2090
—
Reverse transfer capacitance
Crss
—
280
—
Output capacitance
Coss
—
1000
—
—
20
—
—
40
—
Rise time
Turn-on time
tr
VDS = 10 V, VGS = 0 V, f = 1 MHz
ton
Switching time
Fall time
Turn-off time
ID = 10 A
VGS 10 V
0V
RL = 12.5Ω
Gate threshold voltage
4.7 Ω
Drain−source breakdown voltage
Symbol
tf
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“Miller”) charge
Qgd
pF
VOUT
VDD ∼
− 125 V
Duty <
= 1%, tw = 10 μs
VDD ≈ 200 V, VGS = 10 V, ID = 20 A
ns
—
10
—
—
40
—
—
45
—
—
22
—
—
23
—
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
80
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
—
—
−1.5
V
Reverse recovery time
trr
—
320
—
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
2.8
—
μC
Marking
K3994
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead-free (Pb-free) package or
lead-free (Pb-free) finish.
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2SK3994
ID – VDS
50
15
10
Common source
9.5
Tc = 25°C
Tc = 25°C
40 Pulse test
80 Pulse test
9
30
Drain current ID (A)
Drain current ID (A)
Common source
ID – VDS
100
8.5
20
8
7.5
10
12
15
11
60
10
40
9
8
20
VGS = 7 V
VGS = 7 V
0
0
2
4
6
Drain−source voltage
8
0
0
10
VDS (V)
4
8
12
Drain−source voltage
ID – VGS
16
VDS (V)
VDS – VGS
50
5
Common source
Common source
Pulse test
30
Drain−source voltage
Drain current ID (A)
VDS (V)
VDS = 10 V
40
Tc = −55°C
20
100
10
25
0
0
4
8
12
Gate−source voltage
16
Tc = 25°C
4
Pulse test
3
ID = 20 A
2
10
1
5
0
0
20
VGS (V)
4
8
⎪Yfs⎪ – ID
16
20
VGS (V)
RDS (ON) – ID
1
VDS = 10 V
Common source
Tc = 25°C
Pulse test
Pulse test
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
(S)
12
Gate−source voltage
100
Forward transfer admittance ⎪Yfs⎪
20
10
Tc = −55°C
100
25
1
0.1
0.1
1
10
0.1
15
0.01
1
100
Drain current ID (A)
VGS = 10 V
10
100
Drain current ID (A)
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2SK3994
RDS (ON) – Tc
IDR – VDS
Common source
VGS = 10 V
Pulse test
Common source
Tc = 25°C
(A)
10
5
0.18
ID = 20 A
0.12
0.06
Pulse test
100
10
VGS = 0 V
10
5
−40
0
40
80
120
1
0
160
3
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
Case temperature Tc (°C)
Drain−source voltage
Capacitance – VDS
Vth – Tc
30000
6
Gate threshold voltage
Ciss
1000
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
Crss
10
Drain−source voltage
100
1000
5
4
3
2
Common source
1 V
DS = 10 V
ID = 1 mA
Pulse test
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
VDS (V)
Dynamic input/output characteristics
250
VDS (V)
10
0.1
Coss
Drain−source voltage
Capacitance C
(pF)
Vth (V)
10000
100
VDS (V)
200
Common source
ID = 20 A
Tc = 25°C
Pulse test
VDS
150
16
12
VDD = 200 V
50 V
20
100 V
100
8
VGS
4
50
0
0
20
40
60
80
VGS (V)
0
−80
Gate−source voltage
0.24
1000
Drain reverse current IDR
Drain-source ON-resistance RDS (ON)
( Ω)
0.3
0
100
Total gate charge Qg (nC)
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2SK3994
Safe operating area
EAS – Tch
100
500
ＩＤ max
(pulse) ＊
(mJ)
１00μs *
1m s *
ＩＤ max
(continuous) ＊
ＩD （Ａ）
Drain current
Avalanche energy EAS
10
DC operation
Tc=25 ℃
1
0.1
＊ Single nonrepetitive
Ta=25℃
Curves must be derated
linealy with increase in
temperature.
400
300
200
100
0
25
50
Ｖ ＤＳＳ m ax．
75
100
Channel temperature (initial)
0.01
1
10
Drain-source voltage
100
125
150
Tch (°C)
1000
ＶＤＳ （Ｖ）
15 V
BVDSS
IAR
−15 V
VDS
VDD
Test circuit
RG = 25 Ω
VDD = 50 V, L = 2.06 mH
5
Waveform
Ε AS =
⎞
⎛
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎟
⎜B
2
−
V
VDSS
DD
⎠
⎝
2006-11-21
2SK3994
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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