TOSHIBA 2SK2614_06

2SK2614
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)
2SK2614
Unit: mm
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain−source ON-resistance
: RDS (ON) = 0.032 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 13S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 50 V)
z Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
50
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
50
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
20
A
Pulse (Note 1)
IDP
50
A
Drain current
DC
Drain power dissipation (Tc = 25°C)
PD
40
W
JEDEC
Channel temperature
Tch
150
°C
JEITA
SC-64
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
2-7B5B
Note 1: Ensure that the channel temperature does not exceed 150°C.
―
Weight: 0.36 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
3.125
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
125
°C / W
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
1
2006-11-17
2SK2614
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cutoff current
IDSS
VDS = 50 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
—
—
V
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VDS = 4 V, ID = 5 A
—
0.055
0.08
VDS = 10 V, ID = 10 A
—
0.032
0.046
VDS = 10 V, ID = 10 A
7
13
—
—
900
—
—
130
—
—
370
—
—
15
—
—
25
—
—
30
—
—
100
—
—
25
—
—
19
—
—
6
—
Gate threshold voltage
Drain−source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ID = 10 A
10 V
ton
VGS
0V
4.7 Ω
Turn−on time
Switching time
Fall time
tf
Ω
S
pF
OUT
RL = 3 Ω
Drain−source breakdown voltage
ns
VDD ≈ 30 V
Turn−off time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“Miller”) charge
Qgd
Duty ≤ 1%, tw = 10 μs
VDD ≈ 40 V, VGS = 10 V, ID = 20 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
50
A
Forward voltage (diode)
VDSF
—
—
−1.7
V
Reverse recovery time
trr
—
60
—
ns
Reverse recovery charge
Qrr
—
45
—
μC
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs
Marking
K2614
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
2SK2614
ID – VDS
Common source
Tc = 25°C
Pulse test
16
8
6
10
5
10
40
4
15
ID
(A)
ID
ID – VDS
50
Common source
Tc = 25°C
Pulse test
6
8
15
5
(A)
20
12
30
4.5
Drain current
Drain current
3.5
8
VGS = 3 V
4
4
20
3.5
10
VGS = 3 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
0
0
1.0
(V)
2
4
6
Drain-source voltage
8
VDS
2.0
Common source
Tc = 25°C
Pulse test
Common source
25
Tc = −55°C
100
20
10
0
0
4
2
6
Gate-source voltage
1.6
VDS
Pulse test
Drain-source voltage
ID (A)
Drain current
(V)
VDS = 10 V
30
8
VGS
1.2
12
0.4
6
0
0
10
ID = 25 A
0.8
(V)
4
8
Common source
(V)
Common source
10
5
3
5
10
30
50
(Ω)
25
100
0.1
Drain current ID (A)
VGS = 4 V
10
0.05
0.03
0.01
1
100
Pulse test
0.3
RDS (ON)
Drain-source ON-resistance
Forward transfer admittance
⎪Yfs⎪ (S)
Tc = −55°C
3
VGS
20
Tc = 25°C
0.5
Pulse test
30
1
1
16
RDS (ON) – ID
1
VDS = 10 V
50
12
Gate-source voltage
|Yfs| – ID
100
(V)
VDS – VGS
ID – VGS
50
40
10
3
5
10
30
50
100
Drain current ID (A)
3
2006-11-17
2SK2614
RDS (ON) – Ta
0.20
IDR – VDS
100
Common source
Drain reverse current IDR (A)
Drain-source ON-resistance
RDS (ON) (Ω)
Pulse test
0.16
0.12
ID = 12 A
6
0.08
ID = 25 A
VGS = 4 V
6
0.04
12
50
Common source
Tc = 25°C
Pulse test
30
10
5
10
3
5
1
3
VGS = 0, −1 V
VGS = 10 V
0
−80
−40
0
40
80
120
1
0
160
−0.2
Ambient temperature Ta (°C)
−0.4
−0.6
−0.8
−1.0
Drain-source voltage
Capacitance – VDS
−1.2
VDS
−1.4
−1.6
(V)
Vth – Tc
5000
2.0
3000
Gate threshold voltage
Vth (V)
300
Coss
100
Crss
50 Common source
V
=0V
30 GS
f = 1 MHz
1.2
0.8
0.4
Ta = 25°C
10
0.1
0.3
1
3
10
Drain-source voltage
30
0
−80
100
Common source
VDS = 10 V
ID = 1 mA
Pulse test
−40
VDS (V)
0
(V)
Drain-source voltage
30
20
10
80
120
160
50
20
40
16
VDS
40
40
120
Dynamic input / output
characteristics
50
0
0
80
Ambient temperature Ta (°C)
PD – Ta
Drain power dissipation
PD (W)
40
160
30
Ambient temperature Ta (°C)
12
10
Common source
ID = 20 A
VGS
20
VDD = 40 V
Ta = 25°C
8
Pulse test
10
0
0
200
20
VDS
4
10
20
30
40
VGS (V)
Capacitance C
500
Gate-source voltage
(pF)
1.6
Ciss
1000
0
50
Total gate charge Qg (nC)
4
2006-11-17
Normalized transient thermal impedance
rth (t)/Rth (ch-a)
2SK2614
SINGLE PULSE
Pulse width
tw (S)
SAFE OPERATING AREA
300
Drain current ID
(A)
100
50
ID max (pulse)*
100 μs*
30 ID max (continuous)
1 ms*
10
5
3
1
0.5
0.3
DC OPERATION
Ta =25°C
* Single pulse
Ta=25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.3
1
3
VDSS max
10
Drain-source voltage
30
100
300
VDS (V)
5
2006-11-17
2SK2614
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-17