2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV) 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 1.34 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.7 S (typ.) z Low leakage current : IDSS = −100 μA(max) (VDS = −100 V) z Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −100 V Drain−gate voltage (RGS = 20 kΩ) VDGR −100 V Gate−source voltage VGSS ±20 V (Note 1) ID −1 A Pulse (Note 1) IDP −3 A PD 0.5 W (Note 2) PD 1.5 W Single pulse avalanche energy (Note 3) EAS 136.5 mJ Avalanche current IAR −1 A Repetitive avalanche energy (Note 4) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current Drain power dissipation Drain power dissipation Note: JEDEC ― JEITA ― TOSHIBA 2−5K1B Weight: 0.05 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Note 1: Note 2: Note 3: Note 4: Symbol Max Unit Rth (ch−a) 250 °C / W Ensure that the channel temperature does not exceed 150°C. Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Marking Part No. (or abbreviation code) Z Lot No. E A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2007-01-16 2SJ508 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = −100 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage Gate threshold voltage V (BR) DSS ID = −10 mA, VGS = 0 V −100 — — V Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −0.5 A — 1.68 2.5 VGS = −10 V, ID = −0.5 A — 1.34 1.9 VDS = −10 V, ID = −0.5 A 0.3 0.7 — — 135 — VDS = −10 V, VGS = 0 V, f = 1 MHz — 22 — Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 48 — tr — 20 — ton — 32 — Rise time Turn−on time Switching time Ω S pF ns Fall time Turn−off time tf — 25 — toff — 130 — — 6.3 — — 4.1 — — 2.2 — Total gate charge (Gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“miller”) charge Qgd VDD ≈ −80 V, VGS = −10 V, ID = −1 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −1 A Pulse drain reverse current (Note 1) IDRP — — — −3 A Forward voltage (diode) VDSF Reverse recovery time trr Reverse recovery charge Qrr IDR = −1 A, VGS = 0 V — — 1.5 V IDR = −1 A, VGS = 0 V dIDR / dt = 50 A / μs — 90 — ns — 180 — nC 2 2007-01-16 2SJ508 ID – VDS −1.0 −10 ID – VDS −2.0 −3.2 −0.8 −3 −1.6 −0.4 −1 −2.5 Common source Ta = 25°C Pulse test VGS = −2.1V 0 −2.8 ID −0.6 Drain current −5 0 −5 (A) (A) ID Drain current −8 −6 −0.2 −4 −10 −8 −3.6 −4.5 −1.2 −3 −0.8 −2.5 −0.4 VGS = −2.1 V −2 −3 Drain-source voltage −4 VDS 0 −5 0 (V) −2 −4 ID – VGS (V) VDS 25 Drain-source voltage ID (A) Drain current Ta = −55°C −1.2 −0.8 −0.4 −2 −4 −3 Gate-source voltage −2.0 VGS ID = −1 A −1.5 −0.5 −1.0 −0.2 −0.5 0 0 −5 (V) −4 −8 −12 Gate-source voltage |Yfs| – ID −16 VGS −20 (V) RDS (ON) – ID 10 10 Ta = −55°C 1 25 100 Common source VDS = −10 V Pulse test −1 Drain-source ON resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) (V) Common source Ta = 25°C Pulse test −2.5 0 0.1 −0. 1 VDS −10 VDS – VGS 100 −1 −8 −3.0 Common source VDS = −10 V Pulse test 0 −6 Drain-source voltage −2.0 −1.6 Common source Ta = 25°C Pulse test VGS = −4 V 1 Common source Ta = 25°C Pulse test 0.1 −0.01 −10 Drain current ID (A) −10 −0.1 −1 −10 Drain current ID (A) 3 2007-01-16 2SJ508 RDS (ON) − Ta IDR − VDS −10 Common source Pulse test ID = −0.5A 2.0 VGS = −4 V −10V 1.0 0.5 −1 −5 −10 −0.1 −3 −1 0 −80 −40 0 40 80 120 −0.01 160 0 Ambient temperature Ta (°C) VGS = 0 V 0.4 0.8 1000 Ciss 100 −2.0 Coss −1.5 −1.0 Common source VDS = −10 V ID = −1mA Pulse test −0.5 Crss −1 −10 Drain-source voltage (V) −2.5 Gate threshold voltage Vth (V) (pF) Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 −0.1 1.6 VDS Vth − Ta Capacitance – VDS 10000 Capacitance C 1.2 Drain-source voltage 0 −80 −100 −40 VDS (V) 0 40 80 120 Ambient temperature Ta (°C) PD − Ta Dynamic input/output characteristics −160 −16 2.0 Common source ID = −1A Ta = 25°C Pulse test VDS 1.5 Drain-source voltage Drain power dissipation PD (W) Mounted on ceramic substrate ②Single 1.0 ② 0.5 0 0 (V) ①25.4mm×25.4mm×0.8mm ① 40 80 120 160 160 −120 VDD = −80V Ambient temperature Ta (°C) VDS −80 −20V −8 −40V VGS −4 −40 0 200 −12 0 2 4 6 8 VGS (V) 1.5 Common source Ta = 25°C Pulse test Gate-source voltage 2.5 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( Ω) 3.0 0 10 Total gate charge Qg (nC) 4 2007-01-16 2SJ508 rth − tw Normalized transient thermal impedance rth (℃/w) 1000 Single pulse Single 15×15×0.8 100 20×20×0.8 Mounted on ceramic substrate 40×50×0.8mm 10 1 1m 10m 100m 1 Pulse width 10 tw 100 1000 (s) SAFE OPERATING AREA EAS – Tch −10 200 1ms * ID max (continuous) Drain current ID (A) −1 Avalanche energy EAS (mJ) ID max (pulsed) * 10 ms * −0.1 DC operation Ta = 25°C 150 100 50 −0.01 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0. 001 −0.1 −1 0 25 50 VDSS max −10 Drain-source voltage 100 Channel temperature Tch −100 VDS 75 125 150 (°C) −1000 (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG=25 Ω VDD = −50 V, L = 168mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2007-01-16 2SJ508 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-01-16