2SC6041 TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type 2SC6041 Horizontal Deflection Output for HDTV, Digital TV, Projection TV. Unit: mm z High voltage : VCBO = 1700 V z Low saturation voltage : VCE (sat) = 1.5 V (max) : tf = 0.15 µs (typ.) z High speed z Collector metal (fin) is fully covered with mold resin. Maximum Ratings (TC = 25°C) Characteristic Symbol Rating Unit Collector−base voltage VCBO 1700 V Collector−emitter voltage VCEO 750 V Emitter−base voltage VEBO 5 V DC IC 15 Pulse ICP 30 Base current IB 7.5 A JEDEC ― Collector power dissipation PC 70 W JEITA ― Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 5.5 g (typ.) Collector current Junction temperature Storage temperature range A 2-16E3A Marking TOSHIBA C6041 Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 1 2006-06-20 2SC6041 Electrical Characteristics (TC = 25°C) Characteristic Collector cutoff current Emitter cutoff current Emitter–base breakdown voltage DC current gain Symbol Test Condition Min Typ. Max Unit ICBO VCB = 1700 V, IE = 0 ― ― 1 mA IEBO VEB = 5 V, IC = 0 ― ― 100 µA V (BR) EBO IE = 1 mA, IB = 0 5 ― ― V hFE (1) VCE = 5 V, IC = 2 A 30 ― 60 hFE (2) VCE = 5 V, IC = 8 A 8 ― 12 hFE (3) VCE = 5 V, IC = 12 A 5 ― 7 ― Collector–emitter saturation voltage VCE (sat) IC = 12 A, IB = 3 A ― ― 1.5 V Base–emitter saturation voltage VBE (sat) IC = 12 A, IB = 3 A ― ― 1.25 V Transition frequency fT Collector output capacitance Switching time Storage time Fall time VCE = 10 V, IC = 0.1 A ― 2 ― MHz Cob VCB = 10 V, IE = 0, f = 1 MHz ― 260 ― pF tstg ICP = 6 A, IB1 (end) = 0.8 A fH = 32 kHz ― 4 ― ― 0.15 ― tf 2 µs 2006-06-20 2SC6041 IC－ VCE VCE(sat)－ IC 10 3 2.5 2 12 0.8 1.5 1.2 1.0 8 0.6 0.4 IB=0.2A 4 Com m on em itter TC = 25°C 0 0 2 4 6 8 10 1 V CE (sat) (V) 4 3.5 16 Collector － emitter saturation voltage Collector current I C (A) 20 6 IC /IB =4 0.1 Com m on em itter TC= － 25°C 0.01 1 10 Collector - em itter voltage VCE (V) hFE －IC 25 TC = - 25°C 10 Com m on em itter VCE = 5 V 1 0.01 0.1 1 10 Collector current IC (A) 10 8 1 VCE (sat) (V) Collector -emitter saturation voltage DC current gain h FE 100 VCE(sat)－IC 100 6 IC /IB =4 0.1 Com m on em itter TC = 25°C 0.01 100 1 IC－VBE 12 25 T C = 100°C 4 - 25 0 0 0.2 0.4 0.6 0.8 1 1.2 Bas e － em itter voltage VBE (V) 10 1 VCE (sat) (V) VCE = 5 V 8 100 10 Com m on em itter 16 10 Collector current IC (A) VCE(sat)－IC Collector -emitter saturation voltage Collector current I C (A) 10 Collector current IC (A) 10 100 20 8 3 6 IC /IB =4 0.1 Com m on em itter TC = 100°C 0.01 1 1.4 8 10 Collector current IC (A) 100 2006-06-20 rth(j-c) - tw 10 1 rth(j-c) (°C /W ) Transient thermal impedance (junction-case) 2SC6041 0.1 TC = 25°C (infinite heat s ink) Curves s hould be applied in the therm al lim ited area. (Single nonrepetitive puls e) 0.01 0.001 0.00001 0.0001 0.01 0.1m 10μ 100μ 0.001 1 m 10 1100 m Pulse width tw (s) Safe Operating Area 1000 100 Ｉc max (pulsed) ※ 100 μs※ Ic max (30A) 10 μs※ 440 V,30 A Ic max (continuous) 10 10 1 ms※ Collector current I C (A) Collector current IC (A) 100 Reverse Bias－Safe Operating Aria 100 DC operation (Tc=25°C) 1 10 ms※ 100 ms※ 0.1 ※ Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly w ith increase in temperature. 0.01 1 1 0.1 0.01 V CE O m ax 0.001 10 100 1000 Collector－emitter voltage V CE (V) 1700V,10mA @ Ta = 25°C Nonrepeated pulse lB 2=－ 3A / L = 500 µs V CBO m ax 10 100 1000 10000 Collector－emitter voltage V CE (V) PC －T C 100 Collector power dissipation P C (W) 10 Infinite heat sink 80 60 40 20 0 0 25 50 75 100 Case temperature 125 150 175 T C (°C) 4 2006-06-20 2SC6041 RESTRICTIONS ON PRODUCT USE 060116EAA • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C 5 2006-06-20