TOSHIBA 2SC5858

2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
z High Voltage
Unit: mm
: VCBO = 1700 V
z Low Saturation Voltage
: VCE (sat) = 1.5 V (Max)
z High Speed
: tf(2) = 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Base Voltage
VCBO
1700
V
Collector−Emitter Voltage
VCEO
750
V
Emitter−Base Voltage
VEBO
5
V
DC
IC
22
Pulse
ICP
44
Base Current
IB
11
A
Collector Power Dissipation
PC
200
W
JEDEC
―
Junction Temperature
Tj
150
°C
JEITA
―
Tstg
−55~150
°C
TOSHIBA
Collector Current
Storage Temperature Range
A
2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SC5858
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Collector Cut−off Current
ICBO
VCB = 1700 V, IE = 0
―
―
1
mA
Emitter Cut−off Current
IEBO
VEB = 5 V, IC = 0
―
―
100
μA
V (BR) CEO
IC = 10 mA, IB = 0
750
―
―
V
hFE (1)
VCE = 5 V, IC = 2 A
30
―
60
hFE (2)
VCE = 5 V, IC = 8 A
11
―
19
hFE (3)
VCE = 5 V, IC = 17 A
5
―
7.5
Collector−Emitter Saturation Voltage
VCE (sat)
IC = 17 A, IB = 4.25 A
―
―
1.5
V
Base−Emitter Saturation Voltage
VBE (sat)
IC = 17 A, IB = 4.25 A
―
1.0
1.5
V
fT
VCE = 10 V, IC = 0.1 A
―
2
―
MHz
VCB = 10 V, IE = 0, f = 1 MHz
―
280
―
pF
―
4.5
―
―
0.1
―
―
3.5
―
―
0.1
―
Collector − Emitter Breakdown Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
2
―
μs
μs
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2SC5858
IC – VCE
20
4.0
3.5
3.0
2.5
16
(A)
2.0
Collector current IC
1.5
1.2
1.0
0.8
12
0.6
8
0.4
IB = 0.2 A
4
Common emitter
Tc = 25℃
0
0
2
4
6
8
Collector-emitter voltage
10
VCE (V)
hFE – IC
100
Common emitter
VCE = 5 V
Tc = 100°C
DC current gain hFE
25
−25
10
1
0.01
0.1
10
1
Collector current IC
100
(A)
IC – VBE
20
Common emitter
VCE = 5 V
Collector current IC
(A)
16
12
Tc = 100°C
−25
8
25
4
0
0
0.2
0.4
0.6
Base−emitter voltage
0.8
1.0
1.2
VBE (V)
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2SC5858
VCE – IB
VCE(sat) – IC
10
10
Common emitter
Tc = −25℃
8
Collector-emitter saturation voltage
VCE(sat) (V)
Collector-emitter voltage
VCE (V)
Common emitter
Tc = −25℃
6
Ic = 17 A
4
16
15
10
2
14
13
9
12
8
11
6
1
IC/IB = 4
10
8
0.1
7
0
0.01
0
0.8
2.4
1.6
3.2
4.0
1
10
Collector current IC
Base current IB (A)
VCE – IB
100
(A)
VCE (sat) – IC
10
10
Common emitter
Tc = 25℃
Collector-emitter saturation voltage
VCE (sat) (V)
ollector-emitter voltage VCE (V)
Common emitter
Tc = 25℃
8
6
Ic = 17 A
16
4
15
10
14
13
9
2
12
8
11
6
1
IC/IB = 4
10
8
0.1
7
0
0
0.8
2.4
1.6
3.2
0.01
4.0
1
10
10
Collector-emitter saturation voltage
VCE (sat) (V)
8
Collector-emitter voltage
VCE
(V)
Common emitter
Tc = 100℃
6
Ic = 17 A
16
15
10
14
9
2
12
8
(A)
VCE (sat) – IC
VCE – IB
10
4
100
Collector current IC
Base current IB (A)
Common emitter
Tc = 100℃
6
1
IC/IB = 4
10
8
0.1
11
7
0
0
0.01
0.8
1.6
2.4
3.2
4.0
1
Base current IC (A)
10
Collector current IC
4
100
(A)
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2SC5858
rth(j-c) – tw
Transient thermal impedance
(junction−case) rth(j-c) (°C/W)
10
1
0.1
0.01
Tc = 25℃ (Infinite heat sink)
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
0.001
10μ
100μ
10m
1m
100m
Pulse width
1
10
100
1000
tw (s)
Reverse Bias – Safe Operating Area
Safe Operating Area
100
100
1 ms*
IC max (Pulse)*
100 μs*
IC max (Pulse)
10 μs*
495V,44A
IC max (Continuous)*
10
(A)
10 ms*
Collector current IC
Collector current IC
(A)
10
100 ms*
1
0.1
DC operation
Tc = 25°C
*:Single nonrepetitive pulse
must
be
linearly
with
increase
1700V,30mA
Ta = 25℃
Non repeated pulse
IB2 = −3A
L = 500 μH
derated
in
VCEO max
temperature.
0.01
1
0.1
0.01
Tc = 25°C
Curves
1
10
100
Collector-emitter voltage
0.001
10
1000
VCE (V)
100
VCBO max
1000
Collector-emitter voltage
10000
VCE (V)
PC – Tc
Collector power dissipation
PC (W)
250
Infinite heat sink
200
150
100
50
0
0
25
50
75
100
125
150
Case temperature Tc (°C)
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2SC5858
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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