2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) ２．３ Absolute Maximum Ratings (Ta = 25°C) １ ０．８ MAX． Characteristic １．１±０．２ ０．９ ５．７ : |Yfs| = 6.0 S (typ.) ４．１±０．２ : RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance ０．６ MAX ２．３ ２ ３ ２．３±０．２ z Low drain−source ON-resistance １．６ z 4 V gate drive ０．６ MAX． ５．５±０．２ ６．５±０．２ ０．６±０．１５ Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V (Note 1) ID 5 A JEDEC ⎯ Pulse (Note 1) IDP 20 A JEITA ⎯ Drain power dissipation (Tc = 25°C) PD 20 W TOSHIBA Single-pulse avalanche energy (Note 2) EAS 40.5 mJ Weight: 0.36 g (typ.) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current DC １．1 MAX． ０．６±０．１５ 2-7B2B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-20 2SK4017 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Vth VDS = 10 V, ID = 1 mA 1.3 — 2.5 V VGS = 4 V, ID = 2.5 A — 0.09 0.15 VGS = 10 V, ID = 2.5 A — 0.07 0.10 VDS = 10 V, ID = 2.5 A 3.0 6.0 — — 730 — VDS = 10 V, VGS = 0 V, f = 1 MHz — 60 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 95 — tr — 10 — ton — 20 — Rise time Turn−on time Switching time Ω S pF ns Fall time tf — 4 — Turn−off time toff — 35 — Total gate charge (gate−source plus gate−drain) Qg — 15 — Gate−source charge Qgs — 11 — Gate−drain (“Miller”) charge Qgd — 4 — VDD ≈ 48 V, VGS = 10 V, ID = 5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF — — −1.7 V Reverse recovery time trr — 34 — ns Reverse recovery charge Qrr — 28 — μC IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs Marking K4017 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK4017 ID – VDS ID – VDS 5 10 10 ID (A) 3 Drain current ID Drain current 6 8 3 2 VGS = 2.8V 1 0 0.4 0.8 1.2 Drain-source voltage 1.6 VDS Common source Tc = 25°C Pulse test 4 6 8 8 6 3.3 4 3 2 Common source Tc = 25°C Pulse test 0 10 3.3 (A) 4 4 VGS = 2.8V 0 2.0 0 2 (V) 4 2.0 (V) Common source VDS = 10 V Pulse test (V) Common source Tc = 25℃ Pulse test 1.6 VDS 6 4 Drain-source voltage ID (A) VDS 10 VDS – VGS 8 Drain current 8 Drain-source voltage ID – VGS 10 6 100 Ta = −55°C 2 25 12 0.8 ID = 5A 0.4 2.5 1.2 0 0 0 0 1 2 3 Gate-source voltage 4 VGS 5 (V) 4 8 16 20 (V) 0.5 Common source VDS = 10 V Pulse test 10 Common source Ta = 25°C Pulse test 0.4 Tc = −55°C Drain-source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) VGS RDS (ON) – ID |Yfs| – ID 100 12 Gate-source voltage 100 25 1 0.3 0.2 VGS = 4V 0.1 10 0.1 0.1 1 10 0 100 Drain current ID (A) 0 2 4 6 8 10 Drain current ID (A) 3 2006-11-20 2SK4017 RDS (ON) − Ta 10 Common source Pulse test Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (Ω) 0.2 IDR − VDS 0.15 ID = 5A 1.2 2.5 5 0.1 1.2 VGS = 4 V 2.5 0.05 VGS = 10 V 0 −80 −40 0 40 80 120 10 5 1 VGS = 0 V 1 Common source Tc = 25°C Pulse test 0.1 160 3 0 −0.2 Ambient temperature Ta (°C) −0.4 −0.6 Drain-source voltage −0.8 VDS 2.6 Common source Common source VGS = 0 V VDS = 10 V ID = 1mA 2.2 Tc = 25°C Ciss Gate threshold voltage Vth (V) (pF) f = 1 MHz Capacitance C −1.2 Vth − Tc Capacitance – VDS 10000 1000 −1.0 (V) Coss 100 Pulse test 1.8 1.4 Crss 10 0.1 1 Drain-source voltage 10 1 −80 100 −40 0 40 80 120 160 Case temperature Tc (°C) VDS (V) Dynamic input / output characteristics 50 25 Drain-source voltage PD Drain power dissipation VGS 30 15 12V 24V 20 10 Common source ID = 5 A VDD = 48V 10 5 Tc = 25°C VGS (V) 20 Gate-source voltage 40 VDS (W) (V) VDS Pulse test 0 Case temperature Tc (°C) 0 5 10 15 20 25 30 0 Total gate charge Qg (nC) 4 2006-11-20 2SK4017 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 Single Pulse PDM 0.1 0.1 t 0.05 T 0.02 0.01 0.01 10 μ Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 100 m 10 m Pulse width 1 10 tw (s) SAFE OPERATING AREA EAS – Tch 100 50 EAS (mJ) IDmax (continuous) 10 100 μs * 1 ms * DC OPERATION Avalanche energy Drain current ID (A) ID max (pulse)* TC =25°C 1 40 30 20 10 0.1 * Single pulse Tc = 25°C 0 25 Curves must be derated linearly 1 Drain-source voltage 10 VDS 75 100 Channel temperature (initial) VDSS max with increase in temperature. 0.01 0.1 50 125 150 Tch (°C) 100 (V) 15 V BVDSS IAR 0V VDS VDD Test circuit RG = 25 Ω VDD = 25 V, L = 2.2 mH 5 Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-20 2SK4017 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20