Infrared Light Emitting Diodes LNA4602L GaAlAs Infrared Light Emitting Diode Unit: mm For optical control systems R1.75±0.1 4.2±0.3 ■ Features 2.3 1.9 2.4 Not soldered 2.54±0.25 2.4 4.8±0.3 4.5±0.3 φ3.5±0.2 • High-power output, high-efficiency • Light-emitting pattern of almost point source • Ultra-miniature, thin side-view type package 12.8 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Pulse forward current Symbol Ratings * 1.8 10 min. 2.8 1.2 Unit IFP 1.2 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr −20 to +60 °C Storage temperature Tstg −30 to +70 °C 1.66±0.25 2− 0.98±0.2 2− 0.45±0.15 1 0.45±0.15 2 1: Cathode 2: Anode 2.54 Note) *: f = 100 Hz, Duty Cycle = 0.1% ■ Electro-optical Characteristics Ta = 25°C Parameter Symbol Radiant power PO Conditions min IF = 50 mA typ max 3 Unit mW Peak emission wavelength λP IF = 50 mA 850 nm Spectral half band width ∆λ IF = 50 mA 35 nm Forward voltage (DC) VF IF = 50 mA 1.5 1.9 V Peak forward voltage VFP IFP = 1 A, tW = 0.14 ms 2.9 3.8 V Reverse current (DC) IR VR = 3 V 100 µA Half-power angle θ The angle in which radiant intencity is 50% Note) 1. ∆PO≤35% at t = 10 000 shot 30 ° f = 500 Hz, Duty = 7% 32 ms 1 s (1 shot) 2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz. PO (fC MHz) Cut-off Frequcency: 200 MHz fC: 10 log = −3 PO (1 MHz) 1