Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 For optical control systems 2-ø0.45±0.05 Good optical power output linearity with respect to input current 1. 0± 0. 15 15 0. 0± 1. Wide directivity : θ = 100 deg. (typ.) Long lifetime, high reliability 45± ø5.35 +0.2 –0.1 3˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 170 mW Forward current (DC) IF 100 mA Pulse forward current IFP * 2 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 2 1 2.54±0.25 1: Cathode 2: Anode max Unit f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Symbol Conditions min typ 7 12 PO IF = 100mA Peak emission wavelength λP IF = 100mA 900 nm Spectral half band width ∆λ IF = 100mA 70 nm Forward voltage (DC) VF IF = 100mA 1.4 Reverse current (DC) IR VR = 3V Ct VR = 0V, f = 1MHz 50 pF IF = 100mA 700 ns The angle in which radiant intencity is 50% 100 deg. Capacitance between pins Response time Half-power angle tr , t f θ mW 1.7 V 10 µA 1 Infrared Light Emitting Diodes LN172 IF — Ta IFP — Duty cycle 10 2 60 40 tw = 10µs Ta = 25˚C IFP (A) 80 10 1 10 –1 40 60 80 10 –2 10 –1 100 1 10 –1 Forward voltage 10 VF (V) (1) (2) 10 –2 10 –1 1 IF = 100mA 10mA 1mA 0.8 0.4 Forward current IF (A) λP — Ta 960 0 40 Relative radiant intensity (%) 900 880 860 – 40 0 40 80 Ambient temperature Ta (˚C ) 120 5 80 120 IF = 100mA 1 10 –1 – 40 0 40 80 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 100mA Ta = 25˚C IF = 100mA 920 4 Ambient temperature Ta (˚C ) 100 940 3 ∆PO — Ta 1.2 0 – 40 10 2 10 10 –1 10 –2 10 –3 1 VF — Ta 10 2 1 0 Forward voltage VF (V) 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 10 3 10 –2 10 2 10 Duty cycle (%) ∆PO — IF Relative radiant power ∆PO 1 80 80 60 40 60 10˚ 20 20˚ 30˚ 40˚ 100 Relative radiant intensity(%) 20 Relative radiant power ∆PO 0 Ambient temperature Ta (˚C ) Peak emission wavelength λP (nm) tw = 10µs f = 100Hz Ta = 25˚C 20 0 – 25 2 IFP — VF 10 Pulse forward current IFP (A) 100 Pulse forward current Allowable forward current IF (mA) 120 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ 40 110˚ 120˚ 20 0 780 820 860 900 940 Wavelength λ (nm) 980 1020