Infrared Light Emitting Diodes LN75X GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features High-power output, high-efficiency : PO = 10 mW (typ.) 12.8 min. 10.0 min. 2.8 1.8 1.0 High-speed modulation capability : fC = 12 MHz 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 1.2 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 180 mW Forward current (DC) IF 100 mA Pulse forward current IFP * 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to+100 ˚C 1 2 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter min typ 6 10 mW IF = 50mA 880 nm IF = 50mA 50 nm VF IF = 100mA 1.5 IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 25 deg. Cutoff frequency fC* IFP = 50mA + 10mAp-p 12 MHz Frequency when modulation optical power decreases by 3dB from 1MHz. PO(fCMHz) 10 log =–3 P O (1MHz) Radiant power * Symbol Conditions PO IF = 50mA Peak emission wavelength λP Spectral half band width ∆λ Forward voltage (DC) Reverse current (DC) ( max Unit 1.8 V 10 µA ) 1 Infrared Light Emitting Diodes LN75X IFP — Duty cycle 60 40 IFP (mA) 10 4 10 Pulse forward current IFP (A) 80 Pulse forward current 1 10 –1 20 0 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) (2) 1 10 –1 10 2 VF (V) Forward voltage Relative radiant power ∆PO (1) 10 1 0 1 IF = 100mA 1.4 50mA 1.0 λP — Ta 920 0 40 80 120 IF = 50mA 1 10 –1 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 840 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 860 80 Ambient temperature Ta (˚C ) IF = 50mA 880 5 Ambient temperature Ta (˚C ) 100 900 4 ∆PO — Ta 1.8 Pulse forward current IFP (mA) 3 10 0.6 – 40 10 3 2 Forward voltage VF (V) 2.2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 10 VF — Ta 10 10 –2 10 2 Duty cycle (%) ∆PO — IFP 10 2 tw = 10µs f = 100Hz Ta = 25˚C 10 3 10 –1 10 2 10 Relative radiant power ∆PO IF (mA) Allowable forward current 100 0 – 25 Peak emission wavelength λP (nm) IFP — VF 10 2 Relative radiant intensity(%) IF — Ta 120 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 820 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 750 800 850 900 950 1000 1050 Wavelength λ (nm)