Reflective Photosensors (Photo Reflectors) CNZ2179 Reflective Photosensor Unit : mm 5.2 Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor is used as the light detecting element. Features 0.85max. (2-0.5) Long focal distance : 6 mm (typ.) (2-0.5) Visible light cutoff resin is used (7.6) Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Unit VR 3 V IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 20 V VECO 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +85 ˚C Temperature *1 *2 (2.54) 1 4 2 3 , ,, , Absolute Maximum Ratings (Ta = 25˚C) Parameter 10 min. 8.0 13.0 1 2 3 4 Pin connection (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference Input power derating ratio is 1.25 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 1.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit 1.3 1.5 V Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 50mA IR VR = 3V 10 µA Output characteristics Collector cutoff current ICEO VCE = 10V 0.2 µA 1500 µA Collector current IC*1 VCC = 5V, IF = 20mA, RL = 100Ω Transfer *2 Response time tr , tf*3 VCC = 10V, IC = 0.1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA *1 Transfer characteristics measurement circuit (Ambient light is shut off completely.) *2 *3 VCC ,, RL 0.5 V Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. 90% 10% d = 5 mm Standard white paper (Reflective ratio 90%) µs 20 ,,,, ,,, IC ,, ,, , ,, , IF 180 tr tf 1 CNZ2179 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — VF VF — Ta 60 1.6 Ta = 25˚C IF 50 30 IC 20 10 40 30 20 40 60 80 0 100 0 0.4 0.8 1.2 1.6 1 10 –1 1 IF = 30mA 20mA 10mA 1 RL = 1kΩ 10 500Ω 100Ω 1 20 40 0 60 80 Ambient temperature Ta (˚C ) 100 10 –1 10 –2 10 –1 20 40 60 80 100 Ambient temperature Ta (˚C ) 100 VCC = 10V Ta = 25˚C tr (µs) Rise time 10 –2 0 40 IC — d 10 2 –1 100 80 tr — IC 1 80 120 0 – 40 – 20 10 2 10 10 3 VCE = 10V 60 VCC = 5V IF = 20mA RL = 100Ω Collector to emitter voltage VCE (V) ICEO — Ta 40 IC — Ta 1 10 –1 20 160 10 Forward current IF (mA) 10 –3 – 40 – 20 0 Ambient temperature Ta (˚C ) Ta = 25˚C 10 –2 10 –1 10 2 10 10 0 – 40 – 20 2.4 IC (%) IC (mA) Collector current IC (mA) Collector current 10 10 –2 10 –1 2.0 IC — VCE 10 2 VCE = 5V Ta = 25˚C ICEO (µA) 0.4 Forward voltage VF (V) Relative output current 20 IC — IF Dark current 1mA 0.8 1 Collector current IC (mA) 10 IC (%) 0 10 2 2 10mA 10 Ambient temperature Ta (˚C ) 10 1.2 80 Relative output current 0 – 25 VF (V) 40 IF = 50mA Forward voltage IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 60 40 20 0 VCC = 5V Ta = 25˚C RL = 100Ω IF = 20mA 0 4 8 12 Distance d (mm) 16