TOSHIBA SSM6L36FE

SSM6L36FE
TOSHIBA Field-Effect Transistor
Silicon N / P Channel MOS Type
SSM6L36FE
○ High-Speed Switching Applications
•
Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V)
Ron = 1.14Ω (max) (@VGS = 1.8 V)
Ron = 0.85Ω (max) (@VGS = 2.5 V)
Ron = 0.66Ω (max) (@VGS = 4.5 V)
Ron = 0.63Ω (max) (@VGS = 5.0 V)
1.2±0.05
•
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
±10
V
DC
ID
500
Pulse
IDP
1000
Drain current
mA
5
3
4
4.Source2
2.Gate1
5.Gate2
3.Drain2
6.Drain1
ES6
JEDEC
-
JEITA
2-2N1D
Weight: 3.0 mg (typ.)
Symbol
Rating
Unit
Drain–source voltage
VDSS
-20
V
Gate–source voltage
VGSS
±8
V
DC
ID
-330
Pulse
IDP
-660
Drain current
2
1.Source1
TOSHIBA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
6
0.55±0.05
Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V)
Ron = 2.70Ω (max) (@VGS = -1.8 V)
Ron = 1.60Ω (max) (@VGS = -2.8 V)
Ron = 1.31Ω (max) (@VGS = -4.5 V)
1
0.12±0.05
1.6±0.05
1.0±0.05
0.5 0.5
1.5-V drive
1.6±0.05
•
0.2±0.05
Unit: mm
mA
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristics
Symbol
Rating
Unit
PD(Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain power dissipation
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6)
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2008-06-05
SSM6L36FE
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Drain-source breakdown voltage
Test Condition
Min
Typ.
Max
V (BR) DSS
ID = 1 mA, VGS = 0V
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = - 10 V
12
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS =20 V, VGS = 0V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0V
⎯
⎯
±1
μA
0.35
⎯
1.0
V
mS
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 200 mA
(Note2)
420
840
⎯
ID = 200 mA, VGS = 5.0 V
(Note2)
⎯
0.46
0.63
ID = 200 mA, VGS = 4.5 V
(Note2)
⎯
0.51
0.66
ID = 200 mA, VGS = 2.5 V
(Note2)
⎯
0.66
0.85
ID = 100 mA, VGS = 1.8 V
(Note2)
⎯
0.81
1.14
ID = 50 mA, VGS = 1.5 V
(Note2)
⎯
0.95
1.52
⎯
46
⎯
⎯
10.8
⎯
⎯
7.3
⎯
⎯
1.23
⎯
⎯
0.60
⎯
⎯
0.63
⎯
Drain-source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
Switching time
VDS = 10 V, VGS = 0V, f = 1 MHz
VDS = 10V, ID = 0.5 A
VGS = 4.0 V
pF
nC
Turn-on time
ton
VDD = 10 V, ID = 200 mA
⎯
30
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 50 Ω
⎯
75
⎯
ID = -0.5 A, VGS = 0 V
⎯
-0.88
-1.2
Drain-source forward voltage
VDSF
(Note2)
Ω
ns
V
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = -1 mA, VGS = 0 V
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = 8 V
-12
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = -16 V, VGS = 0 V
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -100mA
(Note2)
190
⎯
⎯
mS
ID = -100mA, VGS = -4.5 V
(Note2)
⎯
0.95
1.31
ID = -80mA, VGS = -2.8 V
(Note2)
⎯
1.22
1.60
ID = -40mA, VGS = -1.8 V
(Note2)
⎯
1.80
2.70
ID = -30mA, VGS = -1.5 V
(Note2)
⎯
2.23
3.60
⎯
43
⎯
⎯
10.3
⎯
⎯
6.1
⎯
⎯
1.2
⎯
⎯
0.85
⎯
⎯
0.35
⎯
Drain-source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
Switching time
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDS = -10 V, IDS= -330mA
VGS = -4 V
Turn-on time
ton
VDD = -10 V, ID = -100mA
⎯
90
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 50Ω
⎯
200
⎯
⎯
0.88
1.2
Drain-source forward voltage
VDSF
ID =330mA, VGS = 0 V
(Note2)
Ω
pF
nC
ns
V
Note 2: Pulse test
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2008-06-05
SSM6L36FE
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
90%
OUT
2.5 V
IN
0V
50 Ω
0
10%
RL
10 μs
(c) VOUT
VDD
VDD = 10 V
D.U. ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
10%
90%
VDS (ON)
tr
tf
ton
toff
Q2 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5 V
50Ω
−2.5V
RL
10 μs
(c) VOUT
VDD
VDD = -10 V
D.U. ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
Marking
6
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
5
4
6
LL4
1
VDS (ON)
2
5
Q1
3
1
4
Q2
2
3
Q1 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of
the SSM6L36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Q2 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2
of the SSM6L36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM6L36FE
Q1 (N-ch MOSFET)
ID – VDS
ID – VGS
10 V
1000
2.5 V
1.8 V
(mA)
4.5 V
800
100
ID
Ta = 100 °C
600
1.5 V
Drain current
Drain current
ID
(mA)
1000
400
VGS = 1.2 V
200
0
Common Source
Ta = 25 °C
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
10
1
− 25 °C
25 °C
0.1
Common Source
VDS = 3 V
0.01
0
1.0
1.0
(V)
Gate-source voltage
RDS (ON) – VGS
Common Source
Common Source
Ta = 25°C
Drain-source ON-resistance
RDS (ON) (Ω)
Drain-source ON-resistance
RDS (ON) (Ω)
ID =200mA
25 °C
1
Ta = 100 °C
− 25 °C
0
4
2
6
Gate-source voltage
(V)
8
VGS
2
1.8 V
1.5 V
1
VGS = 4.5V
2.5V
0
10
0
(V)
600
400
200
Drain current
RDS (ON) – Ta
ID
1.0
100m A / 1.8 V
Gate threshold voltage
200m A / 2.5 V
200m A / 4.5 V
200m A / 5.0 V
0.5
0
−50
0
50
Ambient temperature
1000
(mA)
100
Ta
Common Source
Vth (V)
ID = 50m A / VGS = 1.5 V
Common Source
800
Vth – Ta
1.5
Drain-source ON-resistance
RDS (ON) (Ω)
VGS
3
2
1.0
3.0
RDS (ON) – ID
3
0
2.0
VDS = 3 V
ID = 1 mA
0.5
0
−50
150
(°C)
0
50
Ambient temperature
4
100
Ta
150
(°C)
2008-06-05
SSM6L36FE
|Yfs| – ID
10000
IDR – VDS
1000
Common Source
(mA)
VDS = 3 V
3000
IDR
Ta = 25°C
1000
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(mS)
Q1 (N-ch MOSFET)
300
100
30
10
100
10
1
Drain current
ID
100
25 °C
10
D
1
S
–0.5
(mA)
–1.0
Drain-source voltage
C – VDS
VDS
–1.5
(V)
t – ID
1000
100
IDR
G
−25 °C
0.1
0
1000
Common Source
VGS = 0 V
Ta =100 °C
Common Source
toff
(ns)
Ciss
30
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
tf
10
Coss
Crss
5
3
Switching time
Capacitance
C
t
(pF)
50
Common Source
100
ton
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
tr
1
10
Drain-source voltage
VDS
10
100
(V)
1
10
Drain current
100
ID
1000
(mA)
Dynamic Input Characteristic
10
ID = 0.5 A
Ta = 25°C
8
Gate-source voltage
VGS
(V)
Common Source
6
VDD = 10 V
VDD = 16 V
4
2
0
0
1
Total Gate Charge
2
Qg
3
(nC)
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SSM6L36FE
Q2 (P-ch MOSFET)
ID – VDS
-2.8V
-4.5V
-2.5V
-500
(mA)
-8V
Common Source
Ta = 25 °C
-100
-10
Common Source
VDS = -3 V
Ta = 100 °C
-1.8 V
-400
-300
Drain current
Drain current
ID
(mA)
-600
ID – VGS
-1000
ID
-700
-1.5 V
-200
VGS=-1.2 V
-100
0
0
-0.5
-1.0
Drain-source voltage
25 °C
− 25 °C
-0.1
-0.01
0
-1.5
VDS
-1
-1.0
(V)
Gate-source voltage
RDS (ON) – VGS
VGS
(V)
RDS (ON) – ID
5
5
ID =-100mA
Common Source
Ta = 25°C
Common Source
Ta = 25°C
4
Drain-source ON-resistance
RDS (ON) (Ω)
Drain-source ON-resistance
RDS (ON) (Ω)
-2.0
3
2
25 °C
Ta = 100 °C
1
4
3
-1.5 V
-1.8 V
2
-2.8 V
1
VGS = -4.5 V
− 25 °C
0
0
-2
-4
Gate-source voltage
VGS
0
-8
-6
0
(V)
-100
-200
Drain current
RDS (ON) – Ta
-500
ID
(mA)
-600
-700
Vth – Ta
4
-40mA / -1.8 V
-30mA / -1.5V
3
-80mA / -2.8 V
2
1
ID = -100mA / VGS = -4.5 V
0
Common Source
Vth (V)
Common Source
Gate threshold voltage
Drain-source ON-resistance
RDS (ON) (Ω)
-400
-1.0
5
0
−50
-300
50
Ambient temperature
100
Ta
VDS = -3 V
ID = -1 mA
-0.5
0
−50
150
(°C)
0
50
Ambient temperature
6
100
Ta
150
(°C)
2008-06-05
SSM6L36FE
IDR – VDS
|Yfs| – ID
1000
1000
Common Source
VGS = 0 V
(mA)
Common Source
VDS = -3 V
Ta = 25°C
⎪Yfs⎪
Forward transfer admittance
IDR
300
Drain reverse current
(mS)
Q2 (P-ch MOSFET)
100
30
10
-100
-10
-1
Drain current
ID
(pF)
S
10
Ta =100 °C
25 °C
1
−25 °C
0.2
(mA)
0.4
0.6
Drain-source voltage
0.8
VDS
(ns)
C
1.2
(V)
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 50Ω
Ciss
30
1.0
t – ID
10000
50
1000
toff
10
Switching time
t
Capacitance
IDR
G
0.1
0
-1000
C – VDS
100
D
100
Coss
Crss
5
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
3
1
-0.1
-1
-10
Drain-source voltage
100 ton
tr
10
-100
VDS
tf
-1
(V)
-10
Drain current
-100
ID
-1000
(mA)
Dynamic Input Characteristic
-8
Gate-source voltage
VGS
(V)
Common Source
ID = -0.33 A
Ta = 25°C
-6
VDD =-10V
-4
VDD = - 16 V
-2
0
0
1
Total Gate Charge
2
Qg
3
(nC)
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SSM6L36FE
Q1, Q2 Common
PD* – Ta
(mW)
250
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm2 × 6)
Drain power dissipation
P D*
200
150
100
150
0
-40
-20
*: Total Rating
0
20
40
60
80
Ambient temperature
100 120
Ta
140 160
(°C)
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2008-06-05
SSM6L36FE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2008-06-05