VISHAY GSOT12

GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
ESD Protection Diode
Features
3
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see IPPM below
1
2
18078
Mechanical Data
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 8 mg
Case: SOT-23 Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak power
Test condition
dissipation1)
Forward surge current
Symbol
Value
Unit
8/20 µs pulse
PPK
300
W
8.3 ms single half sine-wave
IFSM
7
A
1)
Non-repetitive current pulse and derated above TA = 25 °C,
for GSOT03, GSOT04, the peak power dissipation is 270 W
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Operation and storage
temperature range
Symbol
Value
Unit
Tstg, TJ
- 55 to + 150
°C
Electrical Characteristics
Part Number
Device
Marking
Code
Rated
Stand-off
Voltage
Minimum
Breakdown
Voltage
Maximum
Clamping
Voltage
Maximum
Pulse Peak
Current
Maximum
Leakage
Current
Maximum
Capacitance
VWM
VBR
VC
tp = 8/20 µs
ID
C
V
V
@ 1 mA
1)
V
1)
@ IP = 1 A
1)
@ IP = 5 A
IPPM
µA
pF
A
@ VWM
@ 0 V, 1 MHz
GSOT03
03
3.3
4.0
6.5
7.5
18
125
800
GSOT04
04
4.0
5.0
8.5
10.5
17
125
800
GSOT05
05
5.0
6.0
9.8
12.5
17
100
550
GSOT08
08
8.0
8.5
13.4
15.0
15
10
400
GSOT12
12
12.0
13.3
19.0
28.0
12
2
185
GSOT15
15
15.0
16.7
24.0
35.0
10
1
140
GSOT24
24
24.0
26.7
43.0
60.0
5
1
83
GSOT36
36
36.0
40
60.0
75.0
2
1
80
8/20 µs waveform used (see figure 2)
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
1
GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
PPPM - Peak Pulse Power (W)
10000
1000
300W, 8/20 µs waveshape
100
10
0.1
1.0
17476
10
100
td - Pulse Duration ( µ s )
1000
10000
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
IPPM - Peak Pulse Current, % IRSM
110
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
100
90
80
70
60
50
td = IPP
2
40
30
20
10
0
5
0
10
15
25
20
30
t - Time ( µ s )
17477
Figure 2. Pulse Waveform
100
Peak Pulse Power
8/20 µ s
% Of Rated Power
80
60
40
20
Average Power
0
0
25
17478
50
75
100
125
150
TL - Lead Temperature °C
Figure 3. Power Derating
www.vishay.com
2
Document Number 85807
Rev. 2, 02-Jun-03
GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
.12 2 ( 3.1)
.110 (2.8)
.016 ( 0.4)
Top View
.016 ( 0.4)
.016 ( 0.4)
.037 ( 0.95)
.045 ( 1.15)
.037( 0.95) .037( 0.95)
.007 ( 0.17 5)
.005 ( 0.125)
2
ma x . .004 ( 0.1)
1
.056 ( 1.43 )
.052 ( 1.33 )
3
.102 ( 2.6)
.094 ( 2.4)
17418
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
3
GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85807
Rev. 2, 02-Jun-03