TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.45~−1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±12 V Drain current DC (Note 1) ID −5 Pulse (Note 1) IDP −20 PD (1) 1.1 Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) A JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) W PD (2) 0.75 PD (1) 0.6 Circuit Configuration 8 7 6 5 1 2 3 4 W PD (2) 0.35 Single pulse avalanche energy (Note 4) EAS 16.3 mJ Avalanche current IAR −5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 TPCS8303 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 114 Rth (ch-a) (2) 167 Rth (ch-a) (1) 208 Rth (ch-a) (2) 357 Unit °C/W °C/W Marking (Note 6) Part No. (or abbreviation code) S8303 Note 7 Lot No. (weekly code) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = −16 V, Tch = 25°C, L = 500 μH, IAR = −5 A, RG = 25 Ω Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: ○ on the lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 7: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPCS8303 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 12 V −8 ⎯ ⎯ VDS = −10 V, ID = −200 μA −0.45 ⎯ −1.2 VGS = −2.0 V, ID = −2.5 A ⎯ 31 80 VGS = −2.5 V, ID = −2.5 A ⎯ 22 30 VGS = −4.5 V, ID = −2.5 A ⎯ 15 21 VDS = −10 V, ID = −2.5 A 9 18 ⎯ ⎯ 2560 ⎯ ⎯ 330 ⎯ ⎯ 380 ⎯ ⎯ 5 ⎯ ⎯ 14 ⎯ ⎯ 42 ⎯ ⎯ 142 ⎯ ⎯ 33 ⎯ ⎯ 10 ⎯ ⎯ 5.4 ⎯ Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-ON time ton Fall time −5 V 4.7 Ω Switching time ID = −2.5 A VOUT 0V RL = 4Ω Drain-source breakdown voltage tf V V mΩ S pF ns VDD ∼ − −10 V Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Duty < = 1%, tw = 10 μs Qg Gate-source charge 1 Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − −16 V,VGS = −5 V, ID = −5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −20 A ⎯ ⎯ 1.2 V VDSF IDR = −5 A, VGS = 0 V 3 2009-09-29 TPCS8303 ID – VDS −5 −10 −3 −2 −1.8 ID – VDS Common source Ta = 25°C, Pulse test −1.7 (A) −4 ID −1.6 −3 −2 −1.4 −1 −10 −3 −2 Common source Ta = 25°C Pulse test −1.9 −1.8 −5 Drain current ID (A) −5 Drain current −10 −8 −1.7 −6 −1.6 −4 −1.5 −2 VGS = −1.4 V VGS = −1.3 V 0 0 −0.2 −0.4 −0.6 Drain−source voltage −0.8 VDS 0 0 −1.0 −0.4 (V) −0.8 −1.2 Drain-source voltage ID – VGS −1.6 VDS −0.5 Common source VDS = −10 V Pulse test −8 100 −6 Drain−source voltage (A) ID Drain current VDS (V) Common source Ta = −55°C 25 −4 −2 0 0 −1 −2 Gate−source voltage Pulse test −0.3 −0.2 ID = −5 A −0.1 −2.5 0 0 −3 VGS Ta = 25°C −0.4 −1.3 (V) −8 −12 −16 VGS −20 (V) RDS (ON) – ID 100 100 100 10 25 1 Common source VDS = −10 V Drain−source ON resistance RDS (ON) (mΩ) Ta = −55°C |Yfs| (S) −4 Gate−source voltage |Yfs| – ID Forward transfer admittance (V) VDS – VGS −12 −10 −2.0 VGS = −2 V −2.5 −4.5 10 Common source Pulse test 0.1 −0.1 −1 Drain current −10 ID Ta = 25°C −100 Pulse test 1 −0.1 (A) −1 Drain current 4 −10 ID −100 (A) 2009-09-29 TPCS8303 RDS (ON) – Ta IDR – VDS −100 60 (A) Pulse test IDR ID = −5 A 40 −2.5 Drain reverse current −1.3 30 VGS = −2 V 20 VGS = −2.5 V ID = −5 A, −2.5 A, −1.3 A 10 VGS = −4.5 V 0 −80 −40 0 40 80 Ambient temperature 120 Ta −10 −10 V −1 −3 Common source Ta = 25°C Pulse test 0.2 0.4 Capacitance – VDS Gate threshold voltage Coss 300 Crss 100 Common source (V) 80 120 −10 −3 Drain−source voltage VDS −30 −0.6 −0.4 Common source VDS = −10 V −0.2 ID = −200 μA −40 0 Ambient temperature −100 −20 (2) (3) VDS (V) Drain−source voltage 1.0 0.5 (4) 0.25 40 80 120 Ambient temperature (°C) Dynamic input/output characteristics Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (1) Ta 160 (V) PD – Ta 1.25 40 160 Ta VDD = −16 V VDS (°C) −4 −10 VDD = −16 V −2.5 −4 VGS 10 20 Total gate charge 5 −5 −8 −8 −5 −10 −7.5 −15 0 0 200 Common source ID = −5 A Ta = 25°C, Pulse test (V) −1 −0.8 0 −80 f = 1 MHz −0.3 −1.0 Pulse test VGS = 0 V 10 −0.1 (W) VDS 1.2 30 Qg 40 VGS (pF) 1000 C Capacitance Vth (V) Ciss 30 PD 1.0 Vth – Ta Ta = 25°C Drain power dissipation 0.8 −1.2 3000 0 0 0.6 Drain−source voltage (°C) 10000 0.75 VGS = 0 V −1 −0.1 0 160 −5 Gate−source voltage Drain-source ON resistance RDS (ON) (mΩ) Common source 50 0 (nC) 2009-09-29 TPCS8303 rth − tw 1000 (4) rth (°C/W) 300 Transient thermal impedance 500 30 (3) (2) (1) 100 50 10 5 3 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 1 0.5 0.3 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area −100 Single-device value at dual operation (Note 3b) 1 ms * −10 Drain current ID (A) ID max (Pulse) * 10 ms * −1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2009-09-29 TPCS8303 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-09-29