TOSHIBA GT40T302

GT40T302
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
•
FRD included between emitter and collector
•
Enhancement mode
•
High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A)
FRD: trr = 0.7 μs (typ.) (di/dt = −20 A/μs)
•
Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1500
V
Gate-emitter voltage
VGES
±25
V
DC
IC
40
1 ms
ICP
80
DC
IF
30
1 ms
IFP
80
Collector power dissipation (Tc = 25°C)
PC
200
W
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Collector current
Diode forward current
Storage temperature range
A
A
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Part No. (or abbreviation code)
TOSHIBA
GT40T302
Gate
Lot No.
JAPAN
A line indicates
Lead(Pb)-Free Finish
Emitter
1
2008-12-26
GT40T302
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±25 V, VCE = 0
⎯
⎯
±500
nA
Collector cut-off current
ICES
VCE = 1500 V, VGE = 0
⎯
⎯
1.0
mA
VGE (OFF)
IC = 40 mA, VCE = 5 V
4.0
⎯
7.0
V
VCE (sat)
IC = 40 A, VGE = 15 V
⎯
3.7
5.0
V
VCE = 10 V, VGE = 0, f = 1 MHz
⎯
2900
⎯
pF
⎯
0.40
⎯
⎯
0.45
⎯
⎯
0.23
0.40
⎯
0.6
⎯
Collector-emitter saturation voltage
Input capacitance
Cies
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr
ton
tf
toff
51 Ω
15 V
0
−15 V
15 Ω
Gate-emitter cut-off voltage
600 V
μs
Diode forward voltage
VF
IF = 30 A, VGE = 0
⎯
1.9
2.5
V
Reverse recovery time
trr
IF = 30 A, VGE = 0, di/dt = −20 A/μs
⎯
0.7
3.0
μs
IGBT
⎯
⎯
0.625
Diode
⎯
⎯
1.25
Thermal resistance
Rth (j-c)
2
°C/W
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GT40T302
IC – VCE
VCE – VGE
100
10
15
Common emitter
VCE (V)
20
12
80
Collector-emitter voltage
Collector current IC
(A)
25
60
10
40
20
VGE = 8 V
0
0
2
4
6
8
Collector-emitter voltage
Tc = −40°C
8
60
6
20
80
4
IC = 10 A
2
0
0
10
40
VCE (V)
4
8
12
16
Gate-emitter voltage
VCE – VGE
20
VGE (V)
VCE – VGE
10
10
VCE (V)
Tc = 25°C
8
6
Collector-emitter voltage
Collector-emitter voltage
VCE (V)
Common emitter
80
60
40
4
20
IC = 10 A
2
8
80
6
60
40
4
20
2
IC = 10 A
Common emitter
Tc = 125°C
0
0
4
8
12
Gate-emitter voltage
16
0
0
20
VGE (V)
4
8
Gate-emitter voltage
IC – VGE
VGE (V)
Common emitter
VCE = 5 V
Collector-emitter saturation voltage
VCE (sat) (V)
(A)
20
10
Common emitter
Collector current IC
16
VCE (sat) – Tc
100
80
12
60
40
25
20
Tc = 125°C
VGE = 15 V
8
6
80
60
4
40
20
2
IC = 10 A
−40
0
0
4
8
12
Gate-emitter voltage
16
0
−80
20
VGE (V)
−40
0
40
80
120
160
Case temperature Tc (°C)
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GT40T302
VCE, VGE – QG
Switching time – RG
Common
emitter
RL = 7.5 Ω
Tc = 25°C
30
Switching time (μs)
Collector-emitter voltage VCE (×10 V)
Gate-emitter voltage VGE (V)
10
20
200
10
300
5
3
Common emitter
VCC = 600 V
IC = 40 A
VGG = ±15 V
Tc = 25°C
toff
ton
tr
1
tf
0.5
0.3
VCE = 100 V
0
0
40
80
120
160
200
240
0.1
1
280
3
5
Gate charge QG (nC)
10
Gate resistance
Switching time – IC
Switching time (μs)
3
1
RG
300 500 1000
(Ω)
C – VCE
Common emitter
VCC = 600 V
RG = 51 Ω
VGG = ±15 V
Tc = 25°C
5000
3000
(pF)
5
100
10000
toff
Capacitance C
10
30 50
ton
tr
0.5
0.3
tf
0.1
0.05
Cies
1000
500
300
Coes
100
50
30
10
0.03
5
3
0.01
0
1
1
Cres
Common emitter
VGE = 0 V
f = 1 MHz
Tc = 25°C
10
20
30
Collector current IC
40
50
(A)
3
100
VCE (V)
Reverse bias SOA
IC max (pulsed)*
1 ms*
100
IC max
(continuous)
(A)
10 μs*
100 μs*
Collector current IC
(A)
Collector current IC
50
10 ms*
50
10
5
30
200
300
30
10
Collector-emitter voltage
Safe operating area
100
5
DC operation
3 *: Single nonrepetitive
pulse
Tc = 25°C
1 Curves must be derated
linearly with increase in
0.5
temperature.
0.3
1
3
10
30
30
10
Tj ≤ 125°C
VGE = ±15 V
RG = 51 Ω
100
Collector-emitter voltage
300
1000
3
10
3000
VCE (V)
4
30
100
300
1000
Collector-emitter voltage
VCE (V)
3000
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GT40T302
10
Rth (t) – tw
1
IF – V F
100
Diode
0
(A)
10
Forward current IF
Transient thermal impedance
Rth (t) (°C/W)
Common collector
80
IGBT
10−1
10−2
Tc = 40°C
60
25
40
125
20
Tc = 25°C
10−3
10−5
10−4
10−3
10−2
10−1
Pulse width
tw
10
0
10
1
10
0
0
2
1
(s)
2
Forward voltage VF
Irr, trr – IF
0.5
0
0.8
12
Irr
trr
4
0
0
20
40
60
Forward current IF
80
0.6
0.4
0.2
0
100
(A)
Irr (A)
(μs)
Tc = 25°C
trr
Irr (A)
di/dt = −20 A/μs
8
5
(V)
50
Peak reverse recovery current
1.0
Common collector
Reverse recovery time
Reverse recovery time
1.5
1.0
16
4
Irr, trr – di/dt
20
Peak reverse recovery current
2.0
trr
(μs)
2.5
3
Common collector
IF = 30 A
40
Tc = 25°C
30
trr
20
10
0
0
Irr
-20
-40
-60
-80
-100
-120
di/dt (A/μs)
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GT40T302
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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