GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) • Supplied in compact and thin package requires only a small mounting area • 5th generation (trench gate structure) IGBT • Enhancement-mode • Peak collector current: IC = 130 A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCES 400 V DC VGES ±6 Pulse VGES ±8 DC IC 5 1 ms ICP 130 (Note 1) PC 1.1 W Tj 150 °C Tstg −55~150 °C Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range V A 2 Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-6J1C Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/μs. 1 2006-11-02 GT5G131 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±6 V, VCE = 0 ⎯ ⎯ ±10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 ⎯ ⎯ 10 μA VGE (OFF) IC = 1 mA, VCE = 5 V 0.5 ⎯ 1.0 V VCE (sat) IC = 130 A, VGE = 3 V ⎯ 2.2 7.0 V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2800 ⎯ pF ⎯ 1.3 ⎯ ⎯ 1.4 ⎯ ⎯ 1.5 ⎯ ⎯ 1.8 ⎯ ⎯ ⎯ 114 Collector-emitter saturation voltage Input capacitance Cies Rise time tr 3V 0 Turn-on time Switching time Fall time tf Turn-off time Thermal resistance 30 Ω ton toff (Note 2) VIN: tr < = 100 ns tf < = 100 ns Duty cycle < = 1% 2.3 Ω Gate-emitter cut-off voltage 300 V ⎯ Rth (j-a) μs °C/W 2 Note 2: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] Marking GT5G131 Type ※ Lot No. ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-02 GT5G131 IC – VCE IC – VCE 200 200 2.5 3.5 (A) 160 3.0 Collector current IC Collector current IC (A) 3.0 120 VGE = 2.0 V 80 40 3.5 160 2.5 120 VGE = 2.0 V 80 40 Common emitter Tc = −40°C 0 0 1 2 3 Collector-emitter voltage 4 Common emitter Tc = 25°C 0 5 0 VCE (V) 1 2 VCE (V) 200 3.5 3.5 3.0 120 Collector current IC (A) 160 2.5 VGE = 2.0 V 80 40 160 3.0 120 2.5 80 VGE = 2.0 V 40 Common emitter Common emitter Tc = 125°C Tc = 70°C 0 0 1 2 3 Collector-emitter voltage 4 0 5 0 1 2 VCE (V) IC – VGE 4 5 VCE (V) VCE (sat) – Tc 3 160 25 120 Tc = −40°C Collector-emitter saturation voltage VCE (sat) (V) (A) Collector current IC 3 Collector-emitter voltage 200 70 125 80 40 Common emitter VCE = 5 V 0 5 IC – VCE IC – VCE (A) 4 Collector-emitter voltage 200 Collector current IC 3 0 1 2 Gate-emitter voltage 3 4 IC = 130 A 2.5 100 2 70 1.5 40 1 0.5 Common emitter VGE = 3 V 0 −80 5 VGE (V) −40 0 40 80 120 160 Case temperature Tc (°C) 3 2006-11-02 GT5G131 VCE – VGE VCE – VGE 5 VCE (V) Common emitter Tc = −40°C 4 IC = 130 A 3 Collector-emitter voltage Collector-emitter voltage VCE (V) 5 100 70 2 40 1 0 0 1 2 3 Gate-emitter voltage 4 Common emitter Tc = 25°C 4 IC = 130 A 3 2 40 1 0 0 5 100 70 VGE (V) 1 2 Gate-emitter voltage VCE (V) 4 IC = 130 A 3 Collector-emitter voltage VCE (V) Collector-emitter voltage Common emitter Tc = 70°C VGE (V) 100 70 2 1 40 0 1 2 3 4 Common emitter Tc = 125°C 4 3 IC = 130 A 2 1 0 0 5 100 70 40 1 2 3 Gate-emitter voltage VGE (V) VGE (OFF) – Tc 4 5 VGE (V) C – VCE 10000 1.4 Common emitter VCE = 5 V IC = 1 mA Cies 1 (pF) 1.2 0.8 Capacitance C (V) 5 5 Gate-emitter voltage Gate-emitter cut-off voltage VGE (OFF) 4 VCE – VGE VCE – VGE 5 0 3 0.6 0.4 1000 Coes 100 Common emitter VGE = 0 V f = 1 MHz Tc = 25°C Cres 0.2 0 −80 −40 0 40 80 120 10 160 Case temperature Tc (°C) 1 10 Collector-emitter voltage 4 100 1000 VCE (V) 2006-11-02 GT5G131 tf Collector-emitter voltage Switching time (μs) VCE (V) ton toff 1 tr Common emitter VCE = 300 V VGE = 3 V IC = 130 A Tc = 25°C 0.1 1 10 100 Gate resistance 10 400 8 300 6 200 4 VGE Common emitter VCE 0 0 1000 20 RG (Ω) Switching Time – ICP 0 80 60 Maximum Operating Area 800 Main capacitance CM (μF) Switching time (μs) 40 2 Gate charge QG (nC) 10 toff tf 1 ton Common emitter VCC = 300 V VGE = 3 V RG = 30 Ω Tc = 25°C tr 0.1 VCC = 300 V RL = 2.3 Ω Tc = 25°C 100 VGE (V) VCE, VGE – QG 500 Gate-emitter voltage Switching Time – RG 10 0 50 100 150 Collector current IC 600 400 VCM = 350 V 200 Tc < = 70°C VGE = 4 V 10 Ω < = RG < = 300 Ω 0 200 0 40 80 120 Peak collector current (A) 160 ICP 200 (A) Minimum Gate Drive Area Peak collector current ICP (A) 200 160 120 Tc = 25°C 70 80 40 0 0 2 4 Gate-emitter voltage 6 8 VGE (V) 5 2006-11-02 GT5G131 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-02