HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Unit: mm Q1 Low Forward Voltage Drop :VF(3)=0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance :CT=0.5pF(typ.) High Voltage :VCEO=50V High Collector Current :IC=150mA(max.) Q2 Good hFE Linearity :hFE(IC=0.1mA)/ hFE(IC=2mA) =0.95 Q1 (Diode) Q2 (Transistor) : : 1SS352 Equivalent 1.Anode 2.Base 3.Collector 4.Emitter 5.NC 6.Cathode 2SC4738 Equivalent Q1 (Diode) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA TOSHIBA IO 100 mA Weight: 0.015g (typ.) IFSM 1 A Maximum (peak) reverse voltage Average forward current Surge current (10ms) JEDEC ― JEITA ― 2-3N1D Q2 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit PC* 300 mW Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating: Power dissipation per element should not exceed 200mW per element. 1 2007-11-22 HN2E02F Q1 (Diode) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Symbol Test Circuit VF (1) ― VF (2) ― Test Condition Min Typ. Max IF = 1mA ― 0.62 ― IF = 10mA ― 0.75 ― Unit V VF (3) ― IF = 100mA ― 0.98 1.2 IR (1) ― VR = 30V ― ― 0.1 IR (2) ― VR = 80V ― ― 0.5 Total capacitance CT ― VR = 0, f = 1MHz ― 0.5 ― pF Reverse recovery time trr ― IF = 10mA (fig.1) ― 1.6 ― ns Min Typ. Max Unit Reverse current μA Q2 (Transistor) Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― VCB = 60V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO ― VEB = 5V, IC = 0 ― ― 100 nA DC current gain hFE* ― VCE = 6V, IC = 2mA 120 ― 700 Characteristic Collector-emitter saturation voltage Transition Frequency Collector Output Capacitance Test Condition VCE(sat) ― IC =100mA, IB =10mA ― 0.1 0.25 V fT ― VCE = 10V, IC =10mA 60 ― ― MHz Cob ― VCB = 10V, IE = 0,f=1MHz ― 2.0 ― pF * hFE Rank Y(Y) : 120~240, GR(G) : 200~400,BL(L) : 350~700 Marking ( ) Marking Symbol Equivalent Circuit (Top View) Type Name 6 6 hFE Rank 5 5 4 Q2 13Y Q1 11 2 3 Fig. 1 : Reverse Recovery Time (trr) Test Circuit 2 2007-11-22 HN2E02F Q1 3 2007-11-22 HN2E02F Q2 4 2007-11-22 HN2E02F Q1, Q2 Common COLLECTOR POWER DISSIPATION PC (mW) PC* – Ta 400 300 200 100 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta 150 175 (°C) *:Total Rating 5 2007-11-22 HN2E02F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-22