2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 95 V Collector-emitter voltage VCEO 110 ± 15 V Emitter-base voltage VEBO 5 V DC IC 5 Pulse ICP 10 IB 0.7 Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 2.0 20 A A W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 2SD2604 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 90 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 0.75 ― 3.0 μA V (BR) CEO IC = 10 mA, IB = 0 95 110 125 V Collector-emitter breakdown voltage hFE (1) VCE = 3 V, IC = 2 A 2000 ― 15000 hFE (2) VCE = 3 V, IC = 5 A 1000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 4 mA ― 0.9 1.5 V Base-emitter saturation voltage VBE (sat) IC = 2 A, IB = 4 mA ― 1.5 2.5 V ― 0.5 ― ― 5.0 ― ― 0.7 ― Turn-on time Output ton Input Storage time 20 μs tstg IB2 μs IB2 IB1 Switching time IB1 20 Ω DC current gain Fall time VCC ≈ 40 V tf IB1 = −IB2 = 4 mA, duty cycle ≤ 1% Marking D2604 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2604 VCE – IC hFE – IC 10000 10 Common emitter 25 1.2 1.0 Tc = 100°C 0.8 1.8 1.6 1.4 −55 6 DC current gain hFE Collector current IC (A) Tc = 25°C 8 2.0 0.6 4 0.4 2 IB = 0.2 mA 0 0 2 4 6 Collector-emitter voltage 8 1000 10 100 VCE (V) Common emitter 50 0.1 VCE = 3 V 1 Collector current IC 10 (V) Common emitter Base-emitter saturation voltage VBE (sat) IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) (A) IC – VBE (sat) IC – VCE (sat) 10 −55 1 25 Tc = 100°C 0.1 0.1 10 1 Collector current IC Common emitter IC/IB = 500 −55 25 1 0.1 0.1 10 (A) Tc = 100°C Collector current IC 3 10 1 (A) 2006-11-21 2SD2604 IC – VBE Safe Operating Area 5 30 Common emitter 10 IC max (pulsed)* 100 ms* 10 ms* 100 μs* 20 μs* IC max (continuous) 3 3 1 ms* (A) 2 1 0 0 Tc = 100°C 0.5 1.0 25 Collector current IC Collector current IC (A) VCE = 3 V 4 −55 1.5 Base-emitter voltage 2.0 2.5 3.0 1 DC operation Tc = 25°C 0.3 0.1 VBE (V) 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 3 10 30 Collector-emitter voltage 4 VCEO max 100 300 VCE (V) 2006-11-21 2SD2604 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21