Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type Unit : mm • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) Reverse voltage (DC) 1 0.7 ± 0.1 + 0.1 0.16 − 0.06 2 0.4 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 0.5 ± 0.1 ■ Features A 0.625 K 1.25 ± 0.1 For super-high speed switching circuit For small current rectification 1.7 ± 0.1 0.4 ± 0.1 2.5 ± 0.2 Symbol Rating Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V Average forward current IF(AV) 300 mA Non-repetitive peak forward surge current* IFSM 3 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2K Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 10 V 30 µA Forward voltage (DC) VF IF = 300 mA 0.4 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 60 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 5 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2Z748 Schottky Barrier Diodes (SBD) IF V F VF Ta IR V R 103 104 0.8 Ta = 125°C − 20°C 10 1 10−1 Forward voltage VF (V) 103 75°C 25°C Reverse current IR (µA) Forward current IF (mA) 0.7 Ta = 125°C 102 75°C 102 25°C 10 0.6 0.5 IF = 500 mA 0.4 0.3 0.2 1 50 mA 0.1 5 mA 10−2 0 0.1 0.2 0.3 0.4 0.5 10−1 0.6 0 Forward voltage VF (V) 5 10 120 160 Ambient temperature Ta (°C) 2 80 120 160 200 IF(surge) tW 150 100 50 0 80 40 1 000 200 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) 1 40 0 Ambient temperature Ta (°C) Ta = 25°C 10 0 30 Ct VR 102 10−1 −40 25 200 VR = 20 V 10 V 6V 103 20 Reverse voltage VR (V) IR Ta 104 15 0 −40 0 5 10 15 Reverse voltage VR (V) 20 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 Pulse width tW (ms) 100