VISHAY VEMT3700F

VEMT3700F
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
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19032
DESCRIPTION
VEMT3700F is a high speed silicon NPN epitaxial planar
phototransistor in a miniature PLCC-2 package. The
integrated daylight blocking filter is matched to 950 nm
IR emitters.
Package type: surface mount
Package form: PLCC-2
Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
High radiant sensitivity
Fast response times
Daylight blocking filter matched with 870 nm to
950 nm emitters
Angle of half sensitivity: ϕ = ± 60°
Package notch indicates collector
Package matched with IR emitter series VSML3710
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
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Photo interrupters
Miniature switches
Counters
Encoders
Position sensors
PRODUCT SUMMARY
COMPONENT
VEMT3700F
Ica (mA)
ϕ (deg)
λ0.5 (nm)
0.5
± 60
870 to 1050
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMT3700F-GS08
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
PLCC-2
Tape and reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
VEMT3700F-GS18
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
5
V
Collector current
UNIT
IC
50
mA
ICM
100
mA
Power dissipation
PV
100
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
400
K/W
Collector peak current
Soldering temperature
tp/T ≤ 0.1, tp ≤ 10 μs
Acc. reflow solder profile fig. 10
Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81584
Rev. 1.6, 14-Jul-10
For technical questions, contact: [email protected]
www.vishay.com
1
VEMT3700F
Silicon NPN Phototransistor
Vishay Semiconductors
PV - Power Dissipation Limit (mW)
125
R thJA = 400 K/W
100
75
50
25
0
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
20376
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IC = 1 mA
V(BR)CEO
70
TYP.
MAX.
UNIT
VCE = 20 V, E = 0
ICEO
1
200
nA
VCE = 5 V, f = 1 MHz, E = 0
CCEO
3
pF
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
Ica
0.5
mA
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector ligth current
V
0.25
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
940
nm
λ0.5
870 to 1050
nm
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VCEsat
0.15
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 1 kΩ
tr/tf
6
μs
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 100 Ω
tr/tf
2
μs
VS = 5 V, IC = 2 mA, RL = 100 Ω
fc
180
kHz
Range of spectral bandwidth
Collector emitter saturation voltage
Rise time, fall time
Cut-off frequency
0.3
V
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
2.0
Ica rel - Relative Collector Current
ICEO - Collector Dark Current (nA)
104
103
VCE = 20 V
102
101
10
20
94 8304
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
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2
1.8
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81584
Rev. 1.6, 14-Jul-10
VEMT3700F
Silicon NPN Phototransistor
8
ton/toff - Turn-on/Turn-off Time (µs)
1
0.1
VCE = 5 V
λ = 950 nm
0.01
0.001
0.01
1
ton
Ee = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1
0.1
1
10
2
4
100
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
8
10
12
14
IC - Collector Current (mA)
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1150
1050
λ - Wavelength (nm)
94 8408
VCE - Collector Emitter Voltage (V)
6
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
S (λ)rel - Relative Spectral Sensitivity
λ = 950 nm
1
0
94 8293
10
Ica - Collector Light Current (mA)
toff
2
10
Fig. 4 - Collector Light Current vs. Irradiance
94 8317
4
0
0.1
Ee - Irradiance (mW/cm²)
94 8316
VCE = 5 V
RL = 100 Ω
λ = 950 nm
6
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
0°
10
10°
20°
30°
f = 1 MHz
Srel - Relative Sensitivity
8
6
4
2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ica - Collector Light Current (mA)
10
CCEO - Collector Emitter Capacitance (pF)
Vishay Semiconductors
80°
0
0.1
94 8294
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Document Number: 81584
Rev. 1.6, 14-Jul-10
0.6
0.4
0.2
0
94 8318
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
For technical questions, contact: [email protected]
www.vishay.com
3
VEMT3700F
Silicon NPN Phototransistor
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
1.2
4
2.6 (2.8)
area covered with
solder resist
4
1.6 (1.9)
20873
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
0
0
19841
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
50
100
150
200
250
300
Time (s)
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
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For technical questions, contact: [email protected]
Document Number: 81584
Rev. 1.6, 14-Jul-10
VEMT3700F
Silicon NPN Phototransistor
Vishay Semiconductors
4.5
3.5
Blister tape
Component cavity
94 8670
3.5
3.1
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
2.2
2.0
63.5
60.5
4.1
3.9
94 8665
4.0
3.6
8.3
7.7
10.4
8.4
120°
1.85
1.65
4.1
3.9
14.4 max.
180
178
Fig. 14 - Dimensions of Reel-GS08
5.75
5.25
3.6
3.4
13.00
12.75
2.5
1.5
Fig. 11 - Blister Tape
1.6
1.4
10.0
9.0
120°
Adhesive tape
4.5
3.5
0.25
13.00
12.75
2.5
1.5
2.05
1.95
94 8668
Fig. 12 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
62.5
60.0
321
329
14.4 max.
18857
Fig. 15 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
De-reeling direction
94 8158
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 13 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
Document Number: 81584
Rev. 1.6, 14-Jul-10
For technical questions, contact: [email protected]
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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