VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability • High radiant power 94 8553 • High radiant intensity • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation DESCRIPTION • High modulation band width: fc = 18 MHz VSMG2700 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). • Good spectral matching with Si photodetectors • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 10 ± 60 830 20 VSMG2700 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG2700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMG2700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81472 Rev. 1.3, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 307 VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 180 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Acc. figure 8, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 200 120 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21339 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21340 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.5 1.8 IF = 1 A, tp = 100 μs VF 2.3 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. 10 V V mV/K 10 μA 22 mW/sr 125 6 UNIT pF IF = 1 A, tp = 100 μs Ie 100 IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 60 deg Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 830 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 20 ns IDC = 70 mA, IAC = 30 mA pp fc 18 MHz d 0.44 mm Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 308 For technical questions, contact: [email protected] Document Number: 81472 Rev. 1.3, 03-Nov-09 VSMG2700 High Speed Infrared Emitting Diode, Vishay Semiconductors 830 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.25 10 000 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.1 1 0.75 0.5 0.25 0 740 100 10 tp - Pulse Length (ms) 95 9985 1.0 900 800 λ- Wavelength (nm) 16972_1 Fig. 6 - Relative Radiant Power vs. Wavelength Fig. 3 - Pulse Forward Current vs. Pulse Duration 0° 10° 20° 30° Ie, rel - Relative Radiant Intensity IF - Forward Current (mA) 1000 100 tp = 100 µs tp/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) tp/T = 0.005 Φe, rel - Relative Radiant Power Tamb < 60 °C 80° 1 0 1 2 3 0.6 4 0.4 0.2 0 94 8013 VF - Forward Voltage (V) 18873_1 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 100 10 tp = 1 µs 1 0.1 1 18874 10 100 1000 IF - Forward Pulse Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81472 Rev. 1.3, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 309 VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications 0.9 1.75 ± 0.1 3.5 ± 0.2 Pin identification Mounting Pad Layout 4 A area covered with solder resist 2.6 (2.8) C 2.2 2.8 ± 0.15 1.2 4 1.6 (1.9) Ø 2.4 3 + 0.15 Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 310 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81472 Rev. 1.3, 03-Nov-09 VSMG2700 High Speed Infrared Emitting Diode, Vishay Semiconductors 830 nm, GaAlAs Double Hetero TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 10.0 9.0 120° 4.5 3.5 Adhesive tape 13.00 12.75 2.5 1.5 Identification Label: Vishay type group tape code production code quantity Blister tape Component cavity 94 8670 Fig. 9 - Blister Tape 3.5 3.1 63.5 60.5 14.4 max. 180 178 94 8665 Fig. 12 - Dimensions of Reel-GS08 2.2 2.0 10.4 8.4 120° 5.75 5.25 3.6 3.4 4.0 3.6 4.5 3.5 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 13.00 12.75 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 0.25 2.05 1.95 94 8668 Fig. 10 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 62.5 60.0 321 329 14.4 max. 18857 Fig. 13 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 11 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Document Number: 81472 Rev. 1.3, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 311 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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