RU30120M N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 30V/120A, RDS (ON) =2mΩ(tpy.)@VGS=10V RDS (ON) =2.9mΩ(tpy.)@VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested PDFN 5X6 • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Conversion • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① TC=25°C 50 TC=25°C 410 V A Mounted on Large Heat Sink IDP ID PD 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 ② A ① TC=25°C 120 TC=100°C 97 TA=25°C 30 TA=70°C TC=25°C 24 96 TC=100°C 38 ① A ③ ③ W ③ TA=25°C 4.2 TA=70°C 2.7 ③ www.ruichips.com RU30120M Mounted on Large Heat Sink RθJC RθJA ③ Thermal Resistance-Junction to Case 1.3 °C/W Thermal Resistance-Junction to Ambient 30 °C/W 225 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Test Condition RU30120M Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ⑤ VGS=0V, IDS=250µA VDS=30V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance V 30 30 1 2 µA 3 V ±100 nA VGS=10V, IDS=20A 2 3 mΩ VGS=4.5V, IDS=20A 2.9 4 mΩ 1.2 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A, VGS=0V ISD=20A, dlSD/dt=100A/µs 32 ns 70 nC 1.8 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=15V, Frequency=1.0MHz 3170 480 pF 265 27 VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω Turn-off Fall Time 92 ns 67 37 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 65 VDS=24V, VGS=10V, IDS=20A 14 nC 22 2 www.ruichips.com RU30120M Notes: ① Max current is limited to 50A by the package. ② Pulse width limited by safe operating area. When mounted on 1 inch square copper board, t ≤10sec. ④ Limited by TJmax, IAS =30A, VDD =24V, RG = 50Ω , Starting TJ = 25°C. ⑤ Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑥ Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU30120M RU30120M PDFN 5X6 Tape&Reel 3000 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 3 www.ruichips.com RU30120M Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Square Wave Pulse Duration (sec) 4 www.ruichips.com RU30120M Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Tj - Junction Temperature (°C) 5 www.ruichips.com RU30120M Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 QG - Gate Charge (nC) 6 www.ruichips.com RU30120M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 7 www.ruichips.com RU30120M Package Information PDFN 5X6 SYMBOL MM INCH MM SYMBOL INCH MIN MAX MIN MAX MIN MAX MIN MAX A 1.030 1.170 0.040 0.046 E2 b 0.340 0.480 0.013 0.019 e 1.600 - 0.063 - C 0.824 0.970 0.032 0.038 L 0.050 0.250 0.002 0.010 1.270 BSC 0.050 BSC D 4.800 5.400 0.189 0.213 L1 0.380 0.500 0.015 0.020 D1 4.110 4.310 0.162 0.170 L2 0.380 0.500 0.015 0.020 D2 4.800 5.000 0.189 0.197 H 3.500 3.700 0.138 0.146 E 5.950 6.150 0.234 0.242 I - 0.180 - 0.007 E1 5.650 5.850 0.222 0.230 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 8 www.ruichips.com RU30120M Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 9 www.ruichips.com