TB6598FN/FNG TENTATIVE TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6598FN/FNG Dual Full-Bridge Driver for Stepping Motors The TB6598FN/FNG is a 2-phase bipolar stepping motor driver employing an LDMOS structure with low ON-resistance for output drive transistors. By applying four input signals (EN1, EN2, IN1, IN2), it is possible to control the rotation direction (forward/reverse) of 2-phase/1-2-phase stepper motor. It is also possible to achieve constant-current drive (PWM chopper drive). Features • Motor supply voltage: VM ≤ 15 V (max) • Control supply voltage: VCC = 2.7 V to 6 V • Output current: Iout ≤ 0.8 A (max) • Low ON-resistance: 1.5 Ω (upper side + lower side typ. @ VM = 5 V) • Constant-current control (PWM chopper drive) • Standby (power-saving) mode • On-chip thermal shutdown circuit (TSD) • Compact package: SSOP-16 Weight: 0.07 g (typ.) TB6598FNG: TB6598FNG is a Pb-free product. The following conditions apply to solderability: *Solderability 1. Use of Sn-63Pb solder bath *solder bath temperature = 230°C *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature=245°C *dipping time = 5 seconds *the number of times = once *use of R-type flux z z This product has a MOS structure and is sensitive to electrostatic discharge. When handling the product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at reasonable levels. Install the product correctly. Otherwise, breakdown, damage and/or degradation in the product or equipment may result. 1 2005-01-19 TB6598FN/FNG Block Diagram GND VCC 5 6 13 VM EN1 8 EN2 9 IN1 10 Control Logic 3 AO1 IN2 11 Timing Logic OSC Pre-Drive H-Bridge B 1 AO2 2 RFA 12 OSC TSD 16 BO1 Timing Logic Vlim 7 Vref 4 Vref 0.6 V Pre-Drive H-Bridge B 14 BO2 Band Gap 15 RFB Some functional blocks, circuits, or constants may be omitted or simplified in the block diagram for explanatory purposes. Pin Functions Pin Name Pin No. Functional Description Remarks AO2 1 Output 2 (Ch. A) RFA 2 Winding current detection pin (Ch. A) AO1 3 Output 1 (Ch. A) Ch. A motor winding connection pin +0.6 V (typ.) Ch. A motor winding connection pin Vref 4 Internal reference voltage GND 5 Ground pin VCC 6 Small-signal power supply pin VCC (ope) = 2.7 V to 5.5 V Vlim 7 Winding current setting pin Icoil (A) = Vlimit (V)/external RF (Ω) EN1 8 Enable input 1 EN2 9 Enable input 2 IN1 10 Control input 1 IN2 11 Control input 2 OSC 12 Internal oscillation frequency setting pin Connect an oscillator capacitor externally VM 13 Motor power supply pin VM (ope) = 4.5 V to 13.5 V BO2 14 Output 2 (Ch. B) Ch. B motor winding connection pin RFB 15 Winding current detection pin (Ch. B) BO1 16 Output 1 (Ch. B) Ch. B motor winding connection pin 2 2005-01-19 TB6598FN/FNG Truth Table 1 EN1 (EN2) IN1 (IN2) AO1 (BO1) AO2 (BO2) Mode L * OFF OFF ALL OFF H L H Reverse L H L Forward H “*” indicates “don’t care.” Truth Table 2 EN1 L EN2 (Note) L L Mode (Note) Standby H H L H H Operation Note: VINL (EN1 = EN2) < = 0.5 V. Operating Description The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 115uA 20 uA VCC t2 1.2 V Charge ON Discharge ON 0.8 V Cosc 115 uA 20 kΩ 40 kΩ OSC Oscillator circuit t1 Vosc waveform • The internal oscillation frequency is determined by charging and discharging an external capacitor (Cosc). Vosc = 1 ∫ i dt , Cosc ∆Vosc = I× (t1 − t2)/Cosc, I , ∆Vosc･Cosc 1 I fosc = = , 2 (t1 − t2) 2 ･∆Vosc･Cosc 1 1 （theoretical formula）. = = 2 × 0.4/115 µA × Cosc 6.957 × 10 3 × Cosc 1 t1 − t2 ＝ 3 2005-01-19 TB6598FN/FNG • Chopper control The winding current flows while the output drive transistor is On. When the VRF reaches the limit voltage level (Vlimit), the comparator detects it and turns off the output drive transistor. The oscillator output is squared to generate an internal clock. The off timer starts on the edge of the internal clock and is active for two internal clocks. When the off timer stops, the PWM goes high. osc Internal clock Off timer 2-bit counter PWM output V limit Winding current *2 chop on *1 *2 *1 *2 *1 *2 *1 *1: Increase of current *2: Chopping of current The PWM control limits the winding current to a level determined by the current value (IO) as expressed in the equation below: IO = Vlimt/RNF. • PWM control function When PWM control is provided, normal operation and short brake operation are repeated. To prevent penetrating current, dead time t2 and t4 are provided in the IC. VM M M M <PWM ON> t1 <PWM ON → OFF> t2 = 400 ns (typ.) <PWM OFF> t3 RF M M <PWM OFF → ON> t4 = 400 ns (typ.) <PWM ON> t5 4 2005-01-19 TB6598FN/FNG Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating VM 15 VCC 6 Input voltage VIN −0.2 to 6 V Output current IOUT 0.8 A Power supply voltage Unit Remarks V Power dissipation PD 0.78 (Note 1) Operating temperature Topr −20 to 85 °C Storage temperature Tstg −55 to 150 °C IN1, IN2, EN1 and EN2 pins W Note 1: When mounted on a glass-epoxy PCB (50 mm × 30 mm × 1.6 mm, Cu area: 40%) The absolute maximum ratings of a semiconductor device are a set of specified parameter values that must not be exceeded during operation, even for an instant. If any of these ratings are exceeded during operation, the electrical characteristics of the device may be irreparably altered, in which case the reliability and lifetime of the device can no longer be guaranteed. Moreover, any exceeding of the ratings during operation may cause breakdown, damage and/or degradation in other equipment. Applications using the device should be designed so that no maximum rating will ever be exceeded under any operating conditions. Before using, creating and/or producing designs, refer to and comply with the precautions and conditions set forth in this document. Operating Range (Ta = −20 to 85°C) Characteristics Power supply voltage (VCC) Power supply voltage (VM) Symbol Min Typ. Max Unit VCC 2.7 3 5.5 V VM 2.5 5 13.5 V Output current IOUT ⎯ ⎯ 0.6 A Limit voltage Vlimit GND ⎯ Vref V OSC frequency f osc ⎯ ⎯ 1 MHz Chopping frequency fchop 20 ⎯ 250 kHz 5 2005-01-19 TB6598FN/FNG Electrical Characteristics (unless otherwise specified, VCC = 3 V, VM = 12 V, Ta = 25°C) Characteristics Symbol ICC1 ICC2 ICC3 Test Circuit IM2 IM3 Input voltage Control circuit Hysteresis voltage Input current Output saturating voltage Typ. Max Unit 1ch ON EN1 = 0.8 V, EN2 = 2.0 V ⎯ 1.4 3 mA 1 2ch ON EN1 = EN2 = 2.0 V ⎯ 1.4 3 mA 1 Standby mode EN1 = EN2 = 0.5 V ⎯ 7 15 µA 1 1ch ON, Output open EN1 = 0.8 V, EN2 = 2.0 V ⎯ 1.9 3.0 1 2ch ON, Output open EN1 = EN2 = 2.0 V ⎯ 1.9 3.0 1 Standby mode EN1 = EN2 = 0.5 V ⎯ ⎯ 1 mA µA VINH 2 2 ⎯ VCC + 0.2 VINL1 2 −0.2 ⎯ 0.8 VINL2 2 Standby mode −0.2 ⎯ 0.5 VIN (HIS) ⎯ (Design target value) ⎯ 0.2 ⎯ IINH 2 VIN = 3 V 5 15 30 µA IINL 2 VIN = GND ⎯ ⎯ 1 µA Vsat (U + L) 3 IO = 0.2 A ⎯ 0.3 0.4 IO = 0.6 A ⎯ 0.9 1.2 Output constant-current detection level VRF Reference voltage Vref Reference voltage current capacity Iref Input current at winding current setting pin Min 1 Supply current IM1 Test Condition IIN (limit) V V 4 RRF = 0.1 Ω, Vref = 0.6 V 0.565 0.6 0.635 V 5 No load 0.57 0.6 0.63 V 5 Source (∆Vref = 50 mV) ⎯ ⎯ 100 µA 6 Vlimit = GND ⎯ ⎯ 1 µA ⎯ ⎯ 1 ⎯ ⎯ 1 IL (U) 7 IL (L) 7 VF (U) 8 IO = 0.6 A ⎯ 1 1.2 VF (L) 9 IO = 0.6 A ⎯ 1 1.2 f osc 10 Cosc = 220 pF 430 530 630 kHz Capacitor charge current IC1 11 Vosc = 0 V ⎯ 115 ⎯ µA Capacitor discharge current IC2 11 Vosc = 2 V ⎯ 115 ⎯ µA ⎯ 170 ⎯ °C ⎯ 20 ⎯ °C Output leakage current Diode forward voltage Oscillation frequency Thermal shutdown circuit operating temperature Thermal shutdown hysterisis TSD ∆TSD VM = 15 V ⎯ (Design target value) ⎯ 6 µA V 2005-01-19 TB6598FN/FNG Test Circuit 1: ICC1, ICC2, ICC3, IM1, IM2, IM3 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 IM ICC 5 GND OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 0.8 V, 2.0 V, 0.5 V 2.0 V, 2.0 V, 0.5 V A 1Ω VM 13 12 V 1Ω 4 Vref 3.0 V A ICC1, IM1: EN1 = 0.8 V, EN2 = 2.0 V ICC2, IM2: EN1 = 2.0 V, EN2 = 2.0 V ICC3, IM3: EN1 = 0.5 V, EN2 = 0.5 V 7 2005-01-19 TB6598FN/FNG RFB 15 3 AO1 BO2 14 VM 13 OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 100 kΩ IINL 5 GND VINL 3.0 V 1Ω 4 Vref 8 A A IINH 2 RFA VINH BO1 16 1Ω 1 AO2 100 kΩ VB02 100 kΩ VB01 100 kΩ VA02 12 V 100 kΩ VA01 100 kΩ 100 kΩ 100 kΩ Test Circuit 2: VINH, VINL1, VINL2, IINH, IINL 2005-01-19 TB6598FN/FNG 2 RFA RFB 15 3 AO1 BO2 14 4 Vref VM 13 OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 3V 5 GND V VO (Note1) BO1 16 12 V V 1 AO2 RL (Note2) RL (Note2) VO (Note1) Test Circuit 3: VSAT (U + L) Note1: VSAT (U + L) =12 − VO Note2: Calibrate IO to 0.2 A / 0.6 A by RL. Test Circuit 4: VRF 4 Vref 1Ω V VM 13 5 GND OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 9 12 V 1Ω 220 pF 1Ω V 1Ω 5 mH 5 mH 2005-01-19 TB6598FN/FNG 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 4 Vref OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 12 V 5 GND 220 pF VM 13 3V 100 µA V 0.1 µF SW (Note) Vref Test Circuit 5: Vref, Iref Note: 1. Vref: SW = OFF 2. Iref: The Vref voltage descent at the time of SW = ON checks below 50 mV. Test Circuit 6: IIN (limit) 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 4 Vref OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 12 V 5 GND 3V A VM 13 10 2005-01-19 TB6598FN/FNG RFB 15 3 AO1 BO2 14 4 Vref A A 15 V 2 RFA IL (U) BO1 16 A IL (L) 1 AO2 IL (U) IL (U) A A IL (L) A IL (L) A IL (U) A IL (L) Test Circuit 7: IL (U), IL (L) VM 13 220 pF 5 GND OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 V 0.6 A Test Circuit 8: VF (U) 4 Vref 0.6 A VM 13 5 GND OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 11 V 2005-01-19 TB6598FN/FNG Test Circuit 9: VF (L) 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 0.6 A 0.6 A V VF (L) 4 Vref V VF (L) VM 13 5 GND OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 1 AO2 BO1 16 2 RFA RFB 15 3 AO1 BO2 14 Test Circuit 10: fOSC 4 Vref 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 F.C 12 V OSC 12 3V 5 GND 220 pF VM 13 12 2005-01-19 TB6598FN/FNG RFB 15 3 AO1 BO2 14 4 Vref 5 GND OSC 12 6 VCC IN2 11 7 Vlim IN1 10 8 EN1 EN2 9 13 A A 0.65 V VM 13 1.35 V 2 RFA IC2 BO1 16 IC1 1 AO2 12 V Test Circuit 11: IC1, IC2 2005-01-19 TB6598FN/FNG Application Circuit Example 3V 3 V to 5 V (Note 1) VCC VDD VM (Note 1) VM AO1 M AO2 EN1 RFA EN2 MCU IN1 TB6598FNG BO1 IN2 M BO2 RFB GND GND Vref Vlim OSC (Note 1) (Note 1) Note 1: Noise suppression capacitors and oscillator capacitors should be connected as close as possible to the IC. 14 2005-01-19 TB6598FN/FNG Package Dimensions Weight: 0.07 g (typ.) 15 2005-01-19 TB6598FN/FNG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Maximum Ratings The absolute maximum ratings of a semiconductor device are a set of specified parameter values that must not be exceeded during operation, even for an instant. If any of these ratings are exceeded during operation, the electrical characteristics of the device may be irreparably altered, in which case the reliability and lifetime of the device can no longer be guaranteed. Moreover, any exceeding of the ratings during operation may cause breakdown, damage and/or degradation in other equipment. Applications using the device should be designed so that no maximum rating will ever be exceeded under any operating conditions. Before using, creating and/or producing designs, refer to and comply with the precautions and conditions set forth in this document. 5. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required in the mass production design phase. In furnishing these examples of application circuits, Toshiba does not grant the use of any industrial property rights. 6. Test Circuits Components in test circuits are used only to obtain and confirm device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure in application equipment. Handling of the IC Ensure that the product is installed correctly to prevent breakdown, damage and/or degradation in the product or equipment. Overcurrent Protection and Heat Protection Circuits These protection functions are intended only as a temporary means of preventing output short circuits or other abnormal conditions and are not guaranteed to prevent damage to the IC. If the guaranteed operating ranges of this product are exceeded, these protection features may not operate and some output short circuits may result in the IC being damaged. The over-current protection feature is intended to protect the IC from temporary short circuits only. Short circuits persisting over long periods may cause excessive stress and damage the IC. Systems should be configured so that any over-current condition will be eliminated as soon as possible. Counter-Electromotive force When the motor reverses or stops, the effect of counter-electromotive force may cause the current to flow to the power source. If the power supply is not equipped with sink capability, the power and output pins may exceed the maximum rating. The counter-electromotive force of the motor will vary depending on the conditions of use and the features of the motor. Therefore make sure there will be no damage to or operational problem in the IC, and no damage to or operational errors in peripheral circuits caused by counter-electromotive force. 16 2005-01-19 TB6598FN/FNG RESTRICTIONS ON PRODUCT USE 030619EBA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 17 2005-01-19