MBR4030PT - MBR4060PT 40A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip TO-3P Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications A B H Lead Free Finish, RoHS Compliant (Note 3) J S C Mechanical Data K R · · Case: TO-3P · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Polarity: As Marked on Body Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 P L Q G D N Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 E Ordering Information: See Last Page M M Marking: Type Number Weight: 5.6 grams (approximate) Dim Min Max A 1.88 2.08 B 4.68 5.36 C 20.63 22.38 D 18.5 21.5 E 2.1 2.4 G 0.51 0.76 H 15.38 16.25 J 1.90 2.70 K 2.9Æ 3.65Æ L 3.78 4.50 M 5.2 5.7 N 0.89 1.53 P 1.82 2.46 Q 2.92 3.23 R 11.70 12.84 S ¾ 6.10 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 125°C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Symbol MBR 4030PT MBR 4035PT MBR 4040PT MBR 4045PT MBR 4050PT MBR 4060PT Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 40 A IFSM 400 A @ IF = 20A, TC = 25°C @ IF = 20A, TC = 125°C VFM @ TC = 25°C @ TC = 125°C IRM 1.0 100 Peak Reverse Current at Rated DC Blocking Voltage 0.70 0.60 0.80 0.70 V mA Typical Total Capacitance (Note 2) CT 1100 pF Typical Thermal Resistance Junction to Case (Note 1) RqJC 1.4 °C/W dV/dt 10,000 V/ms Tj, TSTG -65 to +150 °C Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23019 Rev. 8 - 2 1 of 3 www.diodes.com MBR4030PT - MBR4060PT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 50 40 30 20 10 0 0 50 100 100 MBR 4030PT - MBR4045PT 10 MBR4050PT - MBR4060PT 1.0 0.1 0.9 0.8 0.3 0.4 0.6 0.7 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 150 0.2 4000 400 TJ = 25°C f = 1 Mhz 8.3 ms Single half sine-wave (JEDEC method) CT, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 300 200 1000 100 100 1 1 0.1 100 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance 10 TC = 125°C 1.0 0.1 TC = 75°C TC = 25°C 0.01 Tj = 25°C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23019 Rev. 8 - 2 2 of 3 www.diodes.com MBR4030PT - MBR4060PT Ordering Information Notes: (Note 4) Device Packaging Shipping MBR4030PT TO-3P 30/Tube MBR4035PT TO-3P 30/Tube MBR4040PT TO-3P 30/Tube MBR4045PT TO-3P 30/Tube MBR4050PT TO-3P 30/Tube MBR4060PT TO-3P 30/Tube 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS23019 Rev. 8 - 2 3 of 3 www.diodes.com MBR4030PT - MBR4060PT