DIODES ZXMP6A13FTA

A Product Line of
Diodes Incorporated
ZXMP6A13F
60V P-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
400mΩ @ VGS= -10V
400mΩ = -1.1A
600mΩ @ VGS= -4.5V
600mΩ = -0.9A
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•
•
•
Fast switching speed
Low input capacitance
Low gate charge
Qualified to AEC-Q101 Standards for High Reliability
-60V
Mechanical Data
Description and Applications
•
•
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
•
•
•
•
•
•
•
DC - DC converters
Power management functions
Relay and solenoid driving
Motor control
Case: SOT-23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT-23
D
S
G
D
G
Top View
S
Equivalent Circuit
Top View
Pin Out
Ordering Information
Product
ZXMP6A13FTA
Marking
7P6
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000 Units
Marking Information
7P6
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
7P6 = Product Type Marking Code
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© Diodes Incorporated
A Product Line of
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ZXMP6A13F
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
(Note 2)
TA = 70°C (Note 2)
(Note 1)
ID
Pulsed Drain Current (Note 3)
Continuous Source Current (Body Diode) (Note 2)
Pulsed Source Current (Body Diode) (Note 3)
IDM
IS
ISM
Value
-60
±20
-1.1
-0.8
-0.9
-4.0
-1.2
-4.0
Units
V
V
Value
625
5
806
6.5
200
155
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Linear Derating Factor
Power Dissipation (Note 2)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes:
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
2. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
3. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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A Product Line of
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ZXMP6A13F
Thermal Characteristics
10
-ID Drain Current (A)
Limited
1
DC
1s
100m
100ms
10ms
10m
Single Pulse
Tamb=25°C
1
1ms
100µs
10
100
-VDS Drain-Source Voltage (V)
Max Power Dissipation (W)
0.7
RDS(on)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
Maximum Power (W)
Thermal Resistance (°C/W)
Tamb=25°C
D=0.5
100
Single Pulse
D=0.2
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS32014 Rev. 4 - 2
100 120 140 160
Single Pulse
T amb=25°C
Pulse Width (s)
ZXMP6A13F
80
Derating Curve
150
50
60
Temperature (°C)
Safe Operating Area
200
40
Pulse Power Dissipation
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© Diodes Incorporated
A Product Line of
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ZXMP6A13F
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-60
⎯
⎯
⎯
⎯
⎯
⎯
-0.5
±100
V
μA
nA
ID = -250μA, VGS = 0V
VDS = -60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
-1.0
⎯
V
Static Drain-Source On-Resistance (Note 4)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 4 and 6)
Diode Forward Voltage (Note 4)
Reverse Recovery Time (Note 6)
Reverse Recovery Charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
gfs
VSD
trr
Qrr
⎯
⎯
⎯
⎯
1.8
-0.85
21.1
19.3
⎯
0.400
0.600
⎯
-0.95
⎯
⎯
ID = -250μA, VDS = VGS
VGS = -10V, ID = -0.9A
VGS = -4.5V, ID = -0.8A
VDS = -15V, ID = -0.9A
TJ = 25°C, IS = -0.8A, VGS = 0V
TJ = 25°C, IF = -0.9A,
di/dt = 100A/μs
Ciss
Coss
Crss
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
219
25.7
20.5
1.6
2.2
11.2
5.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Total Gate Charge (Note 5)
Qg
⎯
2.9
Total Gate Charge (Note 5)
Gate-Source Charge (Note 5)
Gate-Drain Charge (Note 5)
Qg
Qgs
Qgd
⎯
⎯
⎯
5.9
0.74
1.5
Notes:
Ω
S
V
ns
nC
Test Condition
pF
VDS = -30V, VGS = 0V
f = 1.0MHz
ns
VDD = -30V, ID = -1A,
RG ≅ 6.0Ω, VGS = -10V
⎯
nC
VDS = -30V, VGS = -4.5V,
ID = -0.9A
⎯
⎯
⎯
nC
VDS = -30V, VGS = -10V,
ID = -0.9A
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. For design aid only, not subject to production testing.
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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© Diodes Incorporated
A Product Line of
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ZXMP6A13F
Typical Characteristics
T = 25°C
10V
10
4.5V
-ID Drain Current (A)
-ID Drain Current (A)
10
3.5V
3V
1
2.5V
2V
0.1
-VGS
10V
5V
T = 150°C
1
4.5V
3.5V
3V
2.5V
2V
0.1
1.5V
-VGS
0.01
0.1
1
10
0.1
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
-VDS Drain-Source Voltage (V)
-VDS = 10V
1
T = 150°C
T = 25°C
0.1
1
2
3
4
5
1.8
VGS = -10V
1.6
ID = -0.9A
RDS(on)
1.4
1.2
VGS = VDS
1.0
ID = -250uA
0.8
VGS(th)
0.6
-50
0
-VGS Gate-Source Voltage (V)
-VGS
2.5V
2V
T = 25°C
3V
3.5V
4V 5V
1
7V
10V
0.1
1
10
On-Resistance v Drain Current
Document Number DS32014 Rev. 4 - 2
150
10
T = 150°C
T = 25°C
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
ZXMP6A13F
100
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
1.5V
50
Tj Junction Temperature (°C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance (Ω)
1
-VDS Drain-Source Voltage (V)
Source-Drain Diode Forward Voltage
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A Product Line of
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ZXMP6A13F
Typical Characteristics - continued
10
VGS = 0V
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
f = 1MHz
CISS
200
COSS
100
CRSS
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
8
6
4
2
VDS = -30V
ID = -0.9A
0
0
1
2
3
4
5
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(of )
t(on)
tr
t(on)
Switching time waveforms
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
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Switching time test circuit
November 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A13F
Package Outline Dimensions
E
e
e1
b
3 leads
L1
D
E1
A
L
A1
c
SOT23
Dim.
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Suggested Pad Layout
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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mm
inches
November 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A13F
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
8 of 8
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November 2009
© Diodes Incorporated