A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • ID RDS(on) TA = 25°C 66mΩ @ VGS= 10V 4.4A 97mΩ @ VGS= 4.5V 3.6A 60V Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications • Case: SO-8 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) • Motor control • Backlighting • DC-DC Converters • Power management functions SO-8 D1 G1 D2 G2 S1 Top View Ordering Information Product DMN6066SSD-13 Note: Top View S2 Equivalent Circuit (Note 1) Marking N6066SD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information N6066SD YY WW DMN6066SSD Document Number DS32109 Rev 1 - 2 = Manufacturer’s Marking N6066SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53) 1 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS ID IDM IS ISM Value 60 ±20 4.4 3.5 3.3 17.0 3.2 17.0 Unit V V Value 1.25 10 1.8 14.3 2.14 17.2 100 70 58 55 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 3 & 6) Power dissipation Linear derating factor (Notes 3 & 7) PD (Notes 4 & 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Notes 3 & 6) (Notes 3 & 7) (Notes 4 & 6) (Notes 6 & 8) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. For a dual device with one active die. 7. For a device with two active die running at equal power. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN6066SSD Document Number DS32109 Rev 1 - 2 2 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) 10 1 100m DC 1s 100ms 10m 1m 100m 10ms Single Pulse T amb=25°C 1ms 100µs One active die 1 10 VDS Drain-Source Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Two active die One active die 0 20 Single Pulse D=0.05 D=0.1 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C One active die 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32109 Rev 1 - 2 80 100 Pulse Width (s) DMN6066SSD 60 Derating Curve Maximum Power (W) 110 T amb=25°C 100 One active die 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100µ 1m 10m 100m 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION DMN6066SSD 3 of 8 www.diodes.com Pulse Power Dissipation March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS= 0V VDS= 60V, VGS= 0V VGS= ±20V, VDS= 0V VGS(th) 1.0 RDS (ON) ⎯ Forward Transconductance (Notes 9 & 10) Diode Forward Voltage (Note 9) Reverse recovery time (Note 10) Reverse recovery charge (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 11) Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID= 250μA, VDS= VGS VGS= 10V, ID= 4.5A VGS= 4.5V, ID= 3.5A VDS= 15V, ID= 6A IS= 4.5A, VGS= 0V ⎯ 3.0 0.066 0.097 ⎯ 1.15 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 9) ⎯ 0.048 0.068 19.2 0.89 22.2 16.9 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 502 45.7 27.1 5.4 10.3 1.7 3.2 2.7 2.4 14.7 5.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS= 1.9A, di/dt= 100A/μs VDS= 30V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 30V ID= 4.5A VDD= 30V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. DMN6066SSD Document Number DS32109 Rev 1 - 2 4 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics 10V T = 150°C 4.5V 10 ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 3.5V 1 0.1 3V VGS 0.01 3.5V 1 3V 2.5V 0.1 VGS 2V 1 10 0.1 T = 150°C T = 25°C 0.01 1E-3 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1 1 10 Output Characteristics VDS = 10V 0.1 1 VDS Drain-Source Voltage (V) Output Characteristics 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 0 VGS(th) 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 3V VGS 10 3.5V 1 4V 4.5V 0.1 10V T = 25°C 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN6066SSD Document Number DS32109 Rev 1 - 2 ISD Reverse Drain Current (A) ID Drain Current (A) 4.5V 4V 10 VDS Drain-Source Voltage (V) 10 10V 0.01 0.1 RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION DMN6066SSD 10 T = 150°C 1 T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION Typical Characteristics - continued 600 f = 1MHz CISS 400 COSS CRSS 200 0 0.1 1 10 VGS Gate-Source Voltage (V) C Capacitance (pF) 10 VGS = 0V 8 6 4 VDS = 30V 2 0 ID = 4.5A 0 2 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN6066SSD Document Number DS32109 Rev 1 - 2 Switching time test circuit 6 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMN6066SSD Document Number DS32109 Rev 1 - 2 7 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. B. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMN6066SSD Document Number DS32109 Rev 1 - 2 8 of 8 www.diodes.com March 2010 © Diodes Incorporated