A Product Line of Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C • Fast switching speed • Low gate drive • Low input capacitance 125mΩ @ VGS= -10V -4.3A • “Green” component and RoHS compliant (Note 1) 190mΩ @ VGS= -4.5V -3.5A • Qualified to AEC-Q101 Standards for High Reliability -60V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • DC-DC Converters • Power management functions • Uninterrupted power supply • Case: SOT-223 • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (approximate) SOT223 D G S Pin Out - Top View Top View Equivalent Circuit Ordering Information (Note 1) Product ZXMP6A17GTA Note: Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMP 6A17 ZXMP6A17G Document Number DS33375 Rev. 2 - 2 ZXMP = Product Type Marking Code, Line 1 6A17 = Product Type Marking Code, Line 2 1 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP6A17G Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value -60 ±20 -4.3 -3.5 -3.0 -13.7 -4.8 -13.7 Unit V V Value 2.0 16 3.9 31 62.5 32.0 9.8 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 2) PD (Note 3) (Note 2) (Note 3) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP6A17G Document Number DS33375 Rev. 2 - 2 2 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated 10 RDS(on) Limited 1 DC 1s 100ms 100m 10ms Single Pulse T amb=25°C 10m 1 1ms 100µs 10 -VDS Drain-Source Voltage (V) 100 Max Power Dissipation (W) -ID Drain Current (A) Thermal Characteristics 2.0 25mm x 25mm 1oz FR4 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 70 T amb=25°C 60 Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMP6A17G 100 50 40 D=0.5 30 20 Single Pulse Tamb=25°C Single Pulse D=0.2 D=0.05 10 10 D=0.1 0 100µ 1m 10m 100m 1 Pulse Width (s) 10 100 1k 1 100µ Document Number DS33375 Rev. 2 - 2 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation Transient Thermal Impedance ZXMP6A17G 1m 3 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP6A17G Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.5 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) ⎯ Forward Transconductance (Notes 6 & 7) Diode Forward Voltage (Note 6) Reverse recovery time (Note 7) Reverse recovery charge (Note 7) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8) gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID = -250μA, VDS = VGS VGS = -10V, ID = -2.2A VGS = -4.5V, ID = -1.8A VDS = -15V, ID = -2.2A IS = -2.0A, VGS = 0V, TJ = 25°C ⎯ ⎯ 0.125 0.190 ⎯ -0.95 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 6) ⎯ 0.096 0.120 4.7 -0.85 25.1 27.2 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 637 70.0 53.0 9.0 17.7 1.6 4.4 2.6 3.4 26.2 11.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS = -1.7A, di/dt = 100A/μs, TJ = 25°C VDS = -30V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -30V ID = -2.2A VDD = -30V, VGS = -10V ID = -1A, RG ≅ 6.0Ω 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 7. For design aid only, not subject to production testing. 8. Switching characteristics are independent of operating junction temperatures. ZXMP6A17G Document Number DS33375 Rev. 2 - 2 4 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP6A17G 10V 4V 3.5V 3V 1 2.5V -VGS 0.01 0.1 1 4.5V 3.5V 3V 2.5V 10 2V 0.1 5V 10V T = 150°C 5V 10 -ID Drain Current (A) -ID Drain Current (A) T = 25°C 1 2V 10 -VGS 0.1 1.5V 0.01 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -ID Drain Current (A) T = 150°C 1 T = 25°C 0.1 -VDS = 10V 1 2 3 4 Normalised RDS(on) and VGS(th) 1.8 10 -VGS Gate-Source Voltage (V) Typical Transfer Characteristics 100 2V -VGS 2.5V 10 3V 3.5V 4V 1 5V 0.1 10V T = 25°C 0.01 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMP6A17G Document Number DS33375 Rev. 2 - 2 VGS = -10V 1.6 ID = - 2.3A RDS(on) 1.4 1.2 1.0 VGS(th) VGS = VDS 0.8 ID = -250uA 0.6 -50 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics 10 T = 150°C 1 T = 25°C 0.1 VGS= 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics – continued 1000 10 -VGS Gate-Source Voltage (V) VGS = 0V C Capacitance (pF) ADVANCE INFORMATION ZXMP6A17G f = 1MHz 800 CISS 600 COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 8 6 4 ID = -2.3A 2 VDS = -30V 0 0 2 4 6 8 10 12 14 Q - Charge (nC) 16 18 Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(of ) t(on) tr t(on) Switching time waveforms ZXMP6A17G Document Number DS33375 Rev. 2 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) Switching time test circuit 6 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP6A17G Package Outline Dimensions DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max A - 1.80 - 0.071 D A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - ZXMP6A17G Document Number DS33375 Rev. 2 - 2 7 of 8 www.diodes.com Min Max Min Max 6.30 6.70 0.248 0.264 August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 2.3 0.091 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com ZXMP6A17G Document Number DS33375 Rev. 2 - 2 8 of 8 www.diodes.com August 2010 © Diodes Incorporated