AP2501/AP2511 2.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Description Pin Assignments The AP2501 and AP2511 are single channel current-limited Bus (USB) and other hot-swap applications. The family of devices complies with USB standards and is available with both polarities of Enable input. The devices have fast short-circuit response time for improved (Top View) (Top View) integrated high-side power switches optimized for Universal Serial 8 NC GND 1 GND IN IN EN 1 8 NC 2 7 OUT 3 6 OUT 4 5 FLG overall system robustness, and have integrated output discharge IN 2 7 OUT IN 3 6 OUT EN 4 5 FLG U-DFN3030-8 Type E function to ensure completely controlled discharging of the output voltage capacitor. They provide a complete protection solution for applications subject to heavy capacitive loads and the prospect of SO-8 (Top View) short circuit, and offer reverse current blocking, over-current, overtemperature and short-circuit protection, as well as controlled rise time and under-voltage lockout functionality. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components. GND 1 8 NC IN 2 7 OUT IN EN 3 6 4 5 OUT FLG MSOP-8/MSOP-8EP Note: Latter with exposed pad (dotted line) All devices are available in SO-8, MSOP-8, MSOP-8EP and U-DFN3030-8 Type E packages. Features • Single Channel Current-Limited Power Switch • Output Discharge Function • Fast Short-Circuit Response Time: 2µs • 3.7A Accurate Current Limiting (typ) • LCD TVs & Monitors • Reverse Current Blocking • Set-Top-Boxes, Residential Gateways • 70mΩ On-Resistance (typ) • Laptops, Desktops, Servers, e-Readers • Input Voltage Range: 2.7V – 5.5V • Printers, Docking Stations, HUBs • Built-In Soft-Start with 0.6ms Typical Rise Time • Over-Current and Thermal Protection • Fault Report (FLG) with Blanking Time (7ms typ) • ESD Protection: 3KV HBM, 300V MM • Active Low (AP2501) or Active High (AP2511) Enable • Ambient Temperature Range: -40°C to +85°C • SO-8, MSOP-8, MSOP-8EP and U-DFN3030-8 Type E: Applications Available in “Green” Molding Compound (No Br, Sb) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) • UL Recognized, File Number E322375 • IEC60950-1 CB Scheme Certified Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 1 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Typical Applications Circuit Enable Active High (AP2511) IN Power Supply 2.7V to 5.5V 0.1uF 0.1uF 10k Load OUT 120uF FLG EN ON GND OFF Available Options Part Number Channel Enable Pin (EN) AP2501 1 Active Low AP2511 1 Active High Recommended Maximum Continuous Load Current (A) 2.5A Typical Current Limit (A) Package 3.7A SO-8 MSOP-8 MSOP-8EP U-DFN3030-8 Type E Pin Descriptions U-DFN3030-8 Type E Pin Name MSOP-8/ SO-8 1 GND GND GND 2, 3 IN IN IN 4 EN EN EN 5 FLG FLG FLG 6, 7 8 Exposed Pad OUT NC OUT NC OUT NC Exposed Pad Not Applicable Exposed Pad Pin Number AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 Function MSOP-8EP Ground Voltage Input Pin. Connect a 0.1µF or larger ceramic capacitor from IN to GND as close as possible. (all IN pins must be tied together externally) Enable Input. Active low (AP2501) or active high (AP2511). Over-temperature and over-current fault reporting with 7ms deglitch; active low open-drain output. FLG is disabled for 7ms after turn-on. Voltage Output Pin (all OUT pins must be tied together externally) No internal connection; recommend tie to OUT pins. Recommend connecting to GND externally for improved power dissipation. 2 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Functional Block Diagram Current Sense IN OUT Discharge Control UVLO Current Limit Driver EN FLG Deglitch Thermal Sense GND Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol ESD HBM ESD MM VIN VOUT VEN , VFLG ILOAD TJMAX TST Note: Parameter Human Body Model ESD Protection Machine Model ESD Protection Input Voltage Output Voltage Rating 3 300 6.5 VIN +0.3 Enable Voltage Maximum Continuous Load Current Maximum Junction Temperature Storage Temperature Range (Note 4) Unit KV V V V 6.5 Internal Limited 150 -65 to +150 V A °C °C 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C) Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Note: Parameter VIN Input voltage IOUT Output Current TA Operating Ambient Temperature (Note 5) Min Max Unit 2.7 5.5 V 0 2.5 A -40 +85 °C 5. TA(MAX) = +70°C if VIN ≤ 4.1V and IOUT = 2.5A to keep device from going into thermal protection. AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 3 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Electrical Characteristics (@ TA = +25°C, VIN = +5.0V, CIN = 0.1µF, CL = 1µF, unless otherwise specified.) Symbol VUVLO ΔVUVLO ISHDN IQ ILEAK IREV Parameter Input UVLO Input UVLO Hysteresis Input Shutdown Current Input Quiescent Current Input Leakage Current Reverse Leakage Current Conditions (Note 6) VIN Rising VIN Decreasing Disabled, OUT = Open Enabled, OUT = Open Disabled, OUT Grounded Disabled, VIN = 0V, VOUT = 5V, IREV at VIN ISHORT Over-Load Current Limit (Note 7) Current Limiting Trigger Threshold Short-Circuit Current Limit TA = +25°C -40°C ≤ TA ≤ +85°C TA = +25°C VIN = 3.3V, IOUT = 1A -40°C ≤ TA ≤ +85°C VIN = 5V, VOUT = 4.5V -40°C ≤ TA ≤ +85°C Output Current Slew rate (<100A/s) Enabled into short circuit TSHORT VIL Short-Circuit Response Time EN Input Logic Low Voltage VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground) VIN = 2.7V to 5.5V RDS(ON) ILIMIT ITRIG Min Typ Max Unit 1.6 2.0 50 0.1 60 0.1 0.01 2.4 V mV µA µA µA µA 70 VIN = 5V, IOUT = 1A Switch on-resistance 90 2.8 3.7 3.7 3.7 1.0 100 1.0 1.00 78 105 108 135 4.6 2 0.8 A A A µs V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V ILEAK-EN ILEAK-O TD(ON) TR EN Input Leakage Output Leakage Current Output Turn-On Delay Time Output Turn-On Rise Time VIN = 5V, VEN = 0V and 5.5V Disabled, VOUT = 0V CL = 1µF, RLOAD = 5Ω CL = 1µF, RLOAD = 5Ω 0.01 0.5 0.1 0.6 1.5 µA µA ms ms TD(OFF) TF RFLG IFOH Output Turn-Off Delay Time Output Turn-Off Fall Time FLG Output FET On-Resistance FLG Off Current 0.1 0.05 20 0.01 0.10 40 1.00 ms ms Ω µA TBLANK FLG Blanking Time CL = 1µF, RLOAD = 5Ω CL = 1µF, RLOAD = 5Ω IFLG = 10mA VFLG = 5V Assertion or deassertion due to overcurrent and over-temperature condition 7 15 ms TDIS RDIS TSHDN THYS Discharge Time Discharge Resistance (Note 7) Thermal Shutdown Threshold Thermal Shutdown Hysteresis θJA Notes: Thermal Resistance Junction-toAmbient 2 mΩ 4 V 1.00 1 CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V VIN = 5V, disabled, IOUT = 1mA Enabled 0.6 100 140 20 ms Ω °C °C SO-8 (Note 8) 96 °C/W MSOP-8 (Note 8) 130 °C/W MSOP-8EP (Note 9) 92 °C/W U-DFN3030-8 Type E (Note 9) 84 °C/W 6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO). The discharge function offers a resistive discharge path for the external storage capacitor for limited time. 8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 4 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Typical Performance Characteristics VEN 50% TD(ON) TD(ON) 90% 10% 10% TD(OFF) TR TF 90% 50% 50% TD(OFF) TR VOUT VEN 50% VOUT TF 90% 10% 90% 10% Figure 1. Voltage Waveforms: AP2501 (left), AP2511 (right) All Enable Plots are for Enable Active Low Turn-On Delay and Rise Time Vout 2V/div Turn-Off Delay and Fall Time TA=25°C Vin=5V CL=1uF Rout=2.5Ω Ven 5V/div TA=25°C Vin=5V CL=1uF Rout=2.5Ω Vout 2V/div Ven 5V/div Device Enable Device Disable Iin 1A/div Iin 1A/div Turn-On Delay and Rise Time Turn-Off Delay and Fall Time TA=25°C Vin=5V CL=120uF Rout=2.5Ω Vout 2V/div TA=25°C Vin=5V CL=120uF Rout=2.5Ω Vout 2V/div Ven 5V/div Device Enable Ven 5V/div Device Disable Iin 1A/div Iin 1A/div AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 5 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Typical Performance Characteristics (cont.) Device Enabled Into Short-Circuit Ven 5V/div TA=25°C Vin=5V CL=120uF Rout=1Ω Inrush Current Ven 5V/div CL=470uF CL=220uF Iin 1A/div Iin 1A/div Full-Load to Short-Circuit Transient Response Vout 2V/div CL=120uF Short-Circuit to Full-Load Recovery Response TA=25°C Vin=5V Rout=2Ω Output Short Circuit TA = +25°C Vin=5V CL=120uF,220µF,470µF Rout = 2.5Ω Output Short Circuit Removed TA=25°C Vin=5V Rout=2Ω Vout 2V/div Iin 2A/div Device Turns off and Re-enables Into Current-Limit Short Circuit Present Device Iin 2A/div Thermal Cycles FLG 5V/div FLG 5V/div No-Load to Short-Circuit Transient Response Vout 2V/div Iin 2A/div Output Short Circuit TA=25°C Vin=5V Short-Circuit to No-Load Recovery Response Output Short Circuit Removed Vout 2V/div TA=25°C Vin=5V Device Enable Current-Limit FLG 5V/div AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 Iin 2A/div FLG 5V/div 6 of 18 www.diodes.com Short Circuit Present Device Thermal Cycles August 2012 © Diodes Incorporated AP2501/AP2511 Typical Performance Characteristics (cont.) Power ON FLG 5V/div Short-Circuit with Blanking Time and Recovery FLG 5V/div TA=25°C Vin=5V Rout=2.5Ω CL=120uF Iout 1A/div TA=25°C Vin=5V Vout 5V/div Vout 5V/div Iout 2A/div Vin 5V/div UVLO Increasing UVLO Decreasing Vout 2A/div Vout 2V/div TA=25°C Vin=5V Rout=33Ω CL=120uF Vin 2V/div TA=25°C Vin=5V Rout=33Ω CL=120uF Vin 2A/div AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 7 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 20 10 0 2.0 TURN-ON TIME (µs) 200 150 140 130 120 110 100 90 80 70 60 50 40 30 TURN-OFF TIME (µs) CL = 1µF 2.5 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE (V) Turn-On Time vs. Input Voltage 140 120 100 80 60 40 RL = 5Ω TA = 25°C 20 0 6.0 2.0 100 900 90 800 80 700 70 600 500 400 300 CL = 1µF 200 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE (V) Rise Time vs. Input Voltage 100 VIN = 5.5V 90 VIN = 5V 80 70 60 VIN = 2.7V 50 VIN =3.3V 40 30 20 10 -25 0 25 50 75 100 125 TEMPERATURE (°C) Supply Current, Output Enabled vs. Temperature AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE (V) Turn-Off Time vs. Input Voltage 6.0 CL = 1µF RL = 5 Ω T A = 25°C 60 50 40 30 0 2.0 6.0 SUPPLY CURRENT OUTPUT DISABLED (µA) 2.5 3.0 10 0 2.0 2.5 20 RL = 5 Ω TA = 25°C 100 SUPPLY CURRENT OUTPUT ENABLED (µA) R L = 5Ω T A = 25°C 160 1000 0 -50 C L = 1µF 180 FALL TIME (µs) TURN-ON TIME (µs) Typical Performance Characteristics (cont.) 8 of 18 www.diodes.com 2.5 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE (V) Rise Time vs. Input Voltage 6.0 0.30 0.25 0.20 VIN = 5.5V 0.15 VIN = 5V 0.10 0.05 0.00 -0.05 VIN = 2.7V VIN =3.3V -0.10 -0.15 -0.20 -0.25 -0.30 -50 -25 0 25 50 75 100 125 TEMPERATURE (°C) Supply Current, Output Disabled vs. Temperature August 2012 © Diodes Incorporated AP2501/AP2511 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 -50 SHORT-CIRCUIT OUTPUT CURRENT(A) RDS(ON) (mΩ) Typical Performance Characteristics (cont.) VIN = 2.7V VIN =3.3V VIN = 5.5V VIN = 5V -25 0 25 50 75 100 TEMPERATURE (°C) RDS(ON) vs. Temperature 4.5 4.4 4.3 4.2 4.1 4.0 3.9 3.8 3.7 3.6 3.5 3.4 33 VIN =3.3V VIN = 5V 3.2 3.1 3.0 -50 -25 4.5 CL = 120µF TA = 25°C 2.1 2.0 UVLO Rising 1.9 UVLO Falling 1.8 1.7 THRESHOLD TRIP CURRENT(A) 4.4 UNDERVOLTAGE LOCKOUT (V) VIN = 5.5V 0 25 50 75 100 125 TEMPERATURE (°C) Short-Circuit Output Current vs. Temperature 125 2.2 1.6 -50 VIN = 2.7V 4.1 4.0 3.9 3.8 3.7 3.6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 INPUT VOLTAGE (V) Threshold Trip Current vs. Input Voltage 0 25 50 75 100 125 TEMPERATURE (°C) Undervoltage Lockout vs. Temperature Document number: DS35577 Rev. 5 - 2 4.2 3.5 2.0 2.5 -25 AP2501/AP2511 4.3 9 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Application Note Power Supply Considerations A 0.1μF to 2.2μF X7R or X5R ceramic bypass capacitor placed between IN and GND, close to the device, is recommended. When an external power supply is used, or an additional ferrite bead is added to the input, high inrush current may cause voltage spikes higher than the device maximum input rating during short circuit condition. In this case a 2.2μF or bigger capacitor is recommended. Placing a high-value electrolytic capacitor on the input and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.1μF to 1.0μF ceramic capacitor improves the immunity of the device to short circuit transients. Over-Current and Short Circuit Protection An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an over-current condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN has been applied. The AP2501/AP2511 senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT. In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher inrush current may flow for a very short period of time before the current limit function can react. The input capacitor(s) rapidly discharge through the device, activating current limit circuitry. Protection is achieved by momentarily opening the P-MOS high-side power switch and then gradually turning it on. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and the current is clamped at ILIMIT. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2501/AP2511 is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at ILIMIT. FLG Response When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2501/AP2511 is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: 2 PD = RDS(ON) × I Finally, calculate the junction temperature: TJ = PD x RθJA + TA Where: TA = Ambient temperature °C RθJA = Thermal resistance PD = Total power dissipation Thermal Protection Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2501/AP2511 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 20°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch. AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 10 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Application Note (cont.) Under-Voltage Lockout (UVLO) Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V, even if the switch is enabled. Whenever the input voltage falls below approximately 2V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Discharge Function The discharge function of the device is active when enable is disabled or de-asserted. The discharge function with the N-MOS power switch implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue of the output voltage when either no external output resistance or load resistance is present at the output. Ordering Information Green Green Green Green AP25X1 XXX-X Enable Channel Package 0 : Active Low 1 : Active High 1 : 1 Channel 7 /13 : Tape & Reel S : SO-8 M 8 : MSOP -8 MP : MSOP-8EP FGE : U-DFN3030-8 Type E Part Number Status Package Code Packaging (Note 10) AP25X1S-13 AP25X1M8-13 AP25X1MP-13 AP25X1FGE-7 New Product New Product New Product New Product S M8 MP FGE SO-8 MSOP-8 MSOP-8EP U-DFN3030-8 Type E Notes: Packing 7”/13” Tape and Reel Quantity Part Number Suffix 2500/Tape & Reel -13 2500/Tape & Reel -13 2500/Tape & Reel -13 3000/Tape & Reel -7 10. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 2 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Marking Information (1) SO-8 ( Top view ) 8 7 6 5 Logo Part Number 0 : Active Low 1 : Active High 1 : 1 Channel YY : Year : 08, 09,10~ WW : Week : 01~52; 52 represents 52 and 53 week X : Internal Code AP25 X 1 YY WW X X 2 1 3 4 (2) MSOP-8 ( Top view ) 8 7 6 5 A~Z : Internal Code Logo YWX Part Number 0 : Active Low 1 : Active High Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week 1 : 1 Channel AP25 X 1 1 2 3 4 (3) MSOP-8EP ( Top view ) 8 7 Logo 6 5 YWXE Part Number 0 : Active Low 1 : Active High AP25 X 1 1 2 3 A~Z : Internal Code MSOP-8EP Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week 1 : 1 Channel 4 (4) U-DFN3030-8 Type E ( Top View ) XX YW X AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal Code Part Number AP2501FGE-7 Package U-DFN3030-8 Type E Identification Code BP AP2511FGE-7 U-DFN3030-8 Type E BR 12 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Package Outline Dimensions (All Dimensions in mm) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 (1) Package type: SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm b e D (2) Package type: MSOP-8 D 4x 10 ° 0.25 E Gauge Plane x Seating Plane a y 4x10° L Detail C 1 b E3 A3 A2 A e A1 AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 E1 c See Detail C 13 of 18 www.diodes.com MSOP-8 Dim Min Max Typ A 1.10 A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E3 2.85 3.05 2.95 e 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x 0.750 y 0.750 All Dimensions in mm August 2012 © Diodes Incorporated AP2501/AP2511 Package Outline Dimensions (cont.) (All Dimensions in mm.) (3) Package type: MSOP-8EP D 4X 10 ° 0.25 D1 x E E2 Gauge Plane Seating Plane a y 1 4X 10 ° 8Xb e Detail C E3 A1 L A3 c A2 A D E1 See Detail C MSOP-8EP Dim Min Max Typ A 1.10 A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 D1 1.60 2.00 1.80 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95 e 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x 0.750 y 0.750 All Dimensions in mm (4) Package type: U-DFN3030-8 Type E A U-DFN3030-8 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 − − b 0.20 0.30 0.25 D 2.95 3.05 3.00 D2 2.15 2.35 2.25 E 2.95 3.05 3.00 e 0.65 − − E2 1.40 1.60 1.50 L 0.30 0.60 0.45 Z 0.40 − − All Dimensions in mm A3 A1 D D2 L (x8) E E2 Z (x4) AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 e b (x8) 14 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 1. Package type: SO-8 X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y 2. Package type: MSOP-8 X C Y Dimensions Value (in mm) C 0.650 X 0.450 Y 1.350 Y1 5.300 Y1 3. Package type: MSOP-8EP X C Dimensions Y G Y2 C G X X1 Y Y1 Y2 Y1 X1 AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 15 of 18 www.diodes.com Value (in mm) 0.650 0.450 0.450 2.000 1.350 1.700 5.300 August 2012 © Diodes Incorporated AP2501/AP2511 Suggested Pad Layout (cont.) 4. Package type: U-DFN3030-8 Type E X (x8) C Y (x8) Y1 Y2 Dimensions C C1 X Y Y1 Y2 Value (in mm) 0.65 2.35 0.30 0.65 1.60 2.75 C1 AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 16 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 Taping Orientation (Note 11) For U-DFN3030-8 Type E Notes: 11. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 17 of 18 www.diodes.com August 2012 © Diodes Incorporated AP2501/AP2511 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com AP2501/AP2511 Document number: DS35577 Rev. 5 - 2 18 of 18 www.diodes.com August 2012 © Diodes Incorporated