PHILIPS TEA0676T

INTEGRATED CIRCUITS
DATA SHEET
TEA0676T
Dual pre-amplifier and equalizer for
reverse tape decks
Product specification
Supersedes data of 1996 Jun 20
File under Integrated Circuits, IC01
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
FEATURES
GENERAL DESCRIPTION
• Dual head pre-amplifiers
The TEA0676T is a monolithic bipolar integrated circuit
intended for applications in car radios. It includes head and
equalization amplifiers with electronically switchable time
constants. Furthermore it includes electronically
switchable inputs for tape drivers with reverse heads.
• Reverse head switching
• Equalization with electronically switched time constants
• Output level like Dolby level of 387.5 mV = 0 dB
• Improved EMC behaviour.
The device will operate with power supplies in a range of
7.6 to 12.0 V. The output overload level increases with the
increase in supply voltage, so it is advisable to use a
regulated power supply or a supply with a long time
constant.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
S+N
-------------N
Vo (rms)
CONDITIONS
MIN.
TYP.
MAX.
UNIT
7.6
10
12
V
VCC = 10 V
−
10
13
mA
signal plus noise-to-noise ratio
unweighted RMS value
67
73
−
dB
output voltage (0 dB) (RMS value)
gain internal = 40 dB; linear
−
387.5
−
mV
ORDERING INFORMATION
TYPE
NUMBER
TEA0676T
1997 Oct 07
PACKAGE
NAME
SO16
DESCRIPTION
plastic small outline package; 16 leads; body width 7.5 mm
2
VERSION
SOT162-1
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
BLOCK DIAGRAM
10 µF
180 Ω
handbook, full pagewidth
330 kΩ
equalizer
switch
70 µs
1 kΩ
470
pF
120 µs
IN1
head
switch
IN2
10 nF 8.2 kΩ
18 kΩ
470
pF
10
µF
27 kΩ
10 µF
OUTB
16
EQSW
15
EQINB
13
EQOUTB
14
GND
12
INB1
11
EQ
AMPLIFIER
HSW
INB2
10
9
PREAMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
AMPLIFIER
1
OUTA
10 µF
2
n.c.
PREAMPLIFIER
3
4
5
6
7
8
EQOUTA
EQINA
VCC
INA1
Vref
INA2
10 nF 8.2 kΩ
100
µF
10 V
330 kΩ
470
pF
1 kΩ
470
pF
10 µF
180 Ω
MGE862
Fig.1 Block and application diagram.
1997 Oct 07
3
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
PINNING
SYMBOL
PIN
DESCRIPTION
OUTA
1
output channel A
n.c.
2
not connected
EQOUTA
3
output equalizer channel A
EQINA
4
input equalizer channel A
VCC
5
supply voltage
INA1
6
input channel A1
(forward or reverse)
Vref
7
reference voltage
INA2
8
input channel A2
(reverse or forward)
INB2
9
input channel B2
(reverse or forward)
HSW
10
input head switch
INB1
11
input channel B1
(forward or reverse)
GND
12
ground
EQINB
13
input equalizer channel B
EQOUTB
14
output equalizer channel B
EQSW
15
input equalizer switch
OUTB
16
output channel B
handbook, halfpage
1
16 OUTB
n.c.
2
15 EQSW
EQOUTA
3
14 EQOUTB
EQINA
4
13 EQINB
TEA0676T
VCC
5
12 GND
INA1
6
11 INB1
Vref
7
10 HSW
INA2
8
9
INB2
MGE861
Fig.2 Pin configuration.
INB2 are active) or connected to HIGH level (0.8VCC)
(inputs INA1, INB1 are active).
FUNCTIONAL DESCRIPTION
Gain of pre-amplifier = 30 dB; minimum gain of
EQ-amplifier = 24.5 dB at f = 1 kHz with 70 µs cut-off
frequency.
Equalization time constant switching (70 µs/120 µs) is
achieved when pin 15 (EQSW) is connected to ground via
an 18 kΩ resistor (120 µs) or left open-circuit (70 µs).
Head switching is achieved when pin 10 (HSW) is
connected to ground via a 27 kΩ resistor (inputs INA2,
1997 Oct 07
OUTA
4
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0
14
V
∆V(12-x)
voltage at pins 1 to 11, 13 to 16 with respect to pin 12
0
VCC
V
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
Ves
electrostatic handling voltage
−40
+85
°C
note 1
−2000
+2000
V
note 2
−500
+500
V
Notes
1. Human body model: C = 100 pF; R = 1.5 kΩ.
2. Machine model: C = 200 pF; R = 0 Ω.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1997 Oct 07
PARAMETER
thermal resistance from junction to ambient in free air
5
VALUE
UNIT
70
K/W
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
CHARACTERISTICS
VCC = 10 V; RL = 10 kΩ; CL = 2.5 nF; Tamb = 25 °C; Vo = 0 dB means 387.5 mV at output; all levels are referenced to
387.5 mV with 0 dB as standard; EQ switch in 70 µs position; unless otherwise specified; see notes 1 and 2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VCC
supply voltage (pin 5)
7.6
10.0
12.0
V
ICC
supply current
−
10
13
mA
THD
total harmonic distortion
−
0.08
0.15
%
f = 10 kHz; Vo = 6 dB
−
0.15
0.3
%
HR
headroom at output
VCC = 7.6 V; THD = 1%;
f = 1 kHz
12
−
−
dB
PSRR
power supply ripple
rejection
VR(rms) < 0.25 V; f = 1 kHz
−
50
−
dB
αcs
channel separation
selective measurement;
f = 1 kHz; Vo = 10 dB
57
63
−
dB
αm
channel matching
selective measurement;
f = 1 kHz; Vo = 0 dB
−0.5
−
+0.5
dB
αct
crosstalk between active
and inactive input
selective measurement;
f = 1 kHz; Vo = 10 dB
70
77
−
dB
S+N
-------------N
signal plus noise-to-noise
ratio (RMS value)
unweighted;
f = 20 Hz to 20 kHz; Rs = 0 Ω;
internal gain 40 dB; linear;
see Fig.13
67
73
−
dB
Vno(rms)
equivalent input noise
voltage (RMS value)
unweighted;
f = 20 Hz to 20 kHz; Rs = 0 Ω
−
0.8
−
µV
Gv
voltage gain of
pre-amplifier
from pin INA1 or INA2 to
pin EQINA and from pin INB1
or INB2 to pin EQINB
29
30
31
dB
Av
open-loop amplification
pin INA1 to pin OUTA and
pin INB1 to pin OUTB
f = 10 kHz
80
86
−
dB
f = 400 Hz
f = 1 kHz; Vo = 0 dB
104
110
−
dB
REQ
equalization resistor
4.7
5.8
6.9
kΩ
ZI
input impedance
pre-amplifier
60
100
−
kΩ
ZO
output impedance
EQ-amplifier
−
80
100
Ω
RL
output load resistance
10
−
−
kΩ
CL
output load capacitance
0
−
10
nF
Voffset(DC)
input offset voltage
pins INA1, INA2, INB1 and
INB2 connected to Vref
−
2
−
mV
IO(GND)
DC current capability
output to ground
−2
−
−
mA
IO(VCC)
DC current capability
output to VCC
300
−
−
µA
EMC
DC offset voltage at
pins 1 and 16
f = 900 MHz; Vi = 6 V (RMS);
see Figs 12, 14 and 15
−
50
−
mV
1997 Oct 07
6
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
SYMBOL
PARAMETER
TEA0676T
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching thresholds
EQUALIZATION TIME CONSTANT SWITCHING
VEQSW
pin voltage
load current +100 to −100 µA
−
0.8VCC −
V
IEQSW
input current
VEQSW = 0 to VCC
−180
−
+180
µA
VEQSW(HIGH) pin voltage
time constant 70 µs active
1⁄
VCC
V
VEQSW(LOW) pin voltage
time constant 120 µs active
0
−
1⁄
2VCC − 0.5 V
2VCC
+ 0.5 −
HEAD SWITCHING
VHSW
pin voltage
load current +90 to −90 µA
−
0.8VCC −
V
IHSW
input current
VHSW = 0 to VCC
−170
−
+170
µA
VCC
V
VHSW(HIGH)
HIGH-level pin voltage
inputs INA1 and INB1 active
1⁄
VHSW(LOW)
LOW-level pin voltage
inputs INA2 and INB2 active
0
2VCC
+ 0.5 −
−
1⁄
2VCC − 0.5 V
Notes
1. For an application with a fixed equalization time constant of 120 µs the equalizing network may be applied completely
external. In this application the 8.2 kΩ resistor has to be changed to 14 kΩ and the internal resistor REQ = 5.8 kΩ
must be short-circuited by fixing the equalization switch input at 70 µs (pin 15 left open-circuit). To activate the inputs
INA1 and INB1, pin 10 (HSW) might be left open-circuit. In this event the DC level at pin 10 (HSW) is 0.8VCC
2. It is recommended to switch off VCC with a gradient of 400 V/s at maximum to avoid plops on the tape in the event
of contact between tape and tape head while switching off.
1997 Oct 07
7
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
INTERNAL PIN CONFIGURATIONS
handbook, halfpage
1
+
handbook, halfpage
3
+
5V
5V
80 Ω
80 Ω
100
Ω
100
Ω
5.8
kΩ
MGE863
MGE864
Fig.3 Pins 1 and 16: output channel.
handbook, halfpage
Fig.4 Pins 3 and 14: equalizer outputs.
4
+
handbook, halfpage
5
10 kΩ
1 pF
MGE866
MGE865
Fig.5 Pins 4 and 13: equalizer inputs.
1997 Oct 07
Fig.6 Pin 5: supply voltage.
8
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
handbook, halfpage
TEA0676T
6
5V
+
handbook, halfpage
+
2.5 kΩ
7
5V
2.5 kΩ
220 Ω
100 kΩ
12
pF
MGE868
5V
MGE867
Fig.7 Pins 6, 8, 9, 11: input channel.
handbook, halfpage
Fig.8 Pin 7: reference voltage.
10
handbook, halfpage
8V
8V
+
+
MGE870
MGE869
Fig.9 Pin 10: input head switch.
1997 Oct 07
15
Fig.10 Pin 15: input equalizer switch.
9
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
TEST AND APPLICATION INFORMATION
10 kΩ
10 µF
180 Ω
handbook, full pagewidth
equalizer
switch
70 µs
330 kΩ
1 kΩ
200 Ω
120 µs
10
µF
10 nF 8.2 kΩ
470
pF
head
switch
IN1
IN2
18 kΩ
470
pF
10
µF
10
µF
27 kΩ
200 Ω
10 µF
OUTB
16
EQSW
15
EQINB
13
EQOUTB
14
GND
12
INB1
11
EQ
AMPLIFIER
HSW
INB2
10
9
PREAMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
AMPLIFIER
1
OUTA
10 µF
2
n.c.
PREAMPLIFIER
3
4
5
6
7
8
EQOUTA
EQINA
VCC
INA1
Vref
INA2
200 Ω
10 nF 8.2 kΩ
10 V
200 Ω
10 kΩ
330 kΩ
1 kΩ
180 Ω
100
µF
10
µF
470
pF
10
µF
470
pF
10 µF
MGE871
Fig.11 Test circuit.
1997 Oct 07
10
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
handbook, full pagewidth
470
pF
200 Ω
10 kΩ
IN1
head
switch
200 Ω
IN2
10
µF
20 kΩ
470
pF
27 kΩ
10 µF
OUTB
16
EQSW
15
EQINB
13
EQOUTB
14
GND
12
INB1
11
EQ
AMPLIFIER
HSW
INB2
10
9
PREAMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
AMPLIFIER
1
OUTA
10 µF
2
n.c.
PREAMPLIFIER
3
4
5
6
7
8
EQOUTA
EQINA
VCC
INA1
Vref
INA2
20 kΩ
100
µF
10 V
10 kΩ
200 Ω
470
pF
200 Ω
470
pF
10 Ω
40 Ω
f = 900 MHz
Vi = 6 V (RMS)
MGE872
Fig.12 EMC test diagram.
1997 Oct 07
11
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
handbook, full pagewidth
equalizer
switch
70 µs
head
switch
10 kΩ
120 µs
IN1
IN2
20 kΩ
18 kΩ
10
µF
27 kΩ
10 µF
OUTB
16
EQSW
15
EQINB
13
EQOUTB
14
GND
12
INB1
11
EQ
AMPLIFIER
HSW
INB2
10
9
PREAMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
AMPLIFIER
1
OUTA
10 µF
2
n.c.
PREAMPLIFIER
3
4
5
6
7
8
EQOUTA
EQINA
VCC
INA1
Vref
INA2
20 kΩ
10 V
100
µF
10 kΩ
MGE873
Fig.13 Noise test diagram.
1997 Oct 07
12
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
LAYOUT OF PRINTED CIRCUIT BOARD FOR EMC TEST CIRCUIT
54
handbook, full pagewidth
50
200 Ω
470 pF
27 kΩ
200 Ω
470 pF
10 kΩ
20 kΩ
40 Ω
0Ω
100 nF
0Ω
100 nF
TEA0676T
10 Ω
0Ω
0Ω
20 kΩ
10 kΩ
470 pF
200 Ω
470 pF
200 Ω
MBH457
Fig.14 Top side with components.
1997 Oct 07
13
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
handbook, full pagewidth
54
50
10 µF
X2
10 µF
S1
MP
100 µF
X3
100 µF
X4
MP
HFDR.
MP
10 µF
X1
MBH458
Fig.15 Bottom side with components.
1997 Oct 07
14
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
D
E
A
X
c
HE
y
v M A
Z
9
16
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
8
e
detail X
w M
bp
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
10.5
10.1
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.9
0.4
inches
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.41
0.40
0.30
0.29
0.050
0.419
0.043
0.055
0.394
0.016
0.043
0.039
0.01
0.01
0.004
0.035
0.016
Z
(1)
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT162-1
075E03
MS-013AA
1997 Oct 07
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
15
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
SOLDERING
Wave soldering
Introduction
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1997 Oct 07
16
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 07
17
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
NOTES
1997 Oct 07
18
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
NOTES
1997 Oct 07
19
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Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/02/pp20
Date of release: 1997 Oct 07
Document order number:
9397 750 02743