ONSEMI BAT54T1G

BAT54T1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
• Pb−Free Package is Available
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
Rating
VR
30
V
Forward Power Dissipation, FR−5 Board
(Note 1)
@ TA = 25°C
Derate above 25°C
PF
400
3.2
mW
mW/°C
Thermal Resistance,
Junction−to−Case
RJL
174
°C/W
Thermal Resistance,
Junction−to−Ambient
RJA
492
°C/W
IF
200 Max
mA
Non−Repetitive Peak Forward Current
tp < 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IFRM
300
mA
Forward Current (DC)
1
CATHODE
2
1
TJ
−55 to 125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR-5 = 1.0 x 0.75 x 0.062 in.
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
Junction Temperature
2
ANODE
SBM G
G
SB
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
BAT54T1
SOD−123
3000 / Tape & Reel
BAT54T1G
SOD−123
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 8
1
Publication Order Number:
BAT54T1/D
BAT54T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 A)
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
Adc
Forward Voltage
(IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
−
5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Forward Current (DC)
IF
−
−
200
mAdc
Repetitive Peak Forward Current
IFRM
−
−
300
mAdc
Non−Repetitive Peak Forward Current
(t < 1.0 s)
IFSM
−
−
600
mAdc
820 +10 V
2k
100 H
0.1 F
IF
tr
tp
t
IF
10%
0.1 F
trr
t
DUT
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
90%
iR(REC) = 1 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54T1
100
IF, FORWARD CURRENT (mA)
1 25°C
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0.6
Figure 2. Forward Voltage
1000
IR, REVERSE CURRENT (A)
TA = 150°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
TA = 25°C
0.001
0
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
5
30
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54T1
PACKAGE DIMENSIONS
SOD−123
PLASTIC PACKAGE
CASE 425−04
ISSUE E
D
ÂÂÂÂ
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
E
L
2
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
−−−
−−−
0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
−−−
−−−
0.25
MIN
0.037
0.000
0.020
−−−
0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
−−−
0.063
0.106
0.145
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
STYLE 1:
PIN 1. CATHODE
2. ANODE
C
b
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
1.22
0.048
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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local Sales Representative.
BAT54T1/D