Si4368DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFETt FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0032 @ VGS = 10 V 25 0.0036 @ VGS = 4.5 V 22 D Extremely Low Qgd WFET Technology for Switching Losses Improvement D TrenchFETr Gen II Power MOSFET D 100% Rg Tested APPLICATIONS D Low-Side DC/DC Conversion − Notebook, Server, VRM Module D Fixed Telecom D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4368DY—E3 Si4368DY-T1—E3 (Lead Free with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Continuous Source Current (Diode Conduction)a IS L= 0.1 mH TA = 25_C Maximum Power Dissipationa TA = 70_C 17 20 13 Operating Junction and Storage Temperature Range 70 A 2.9 iAS PD V 25 IDM Pulsed Drain Current (10 ms Pulse Width) Avalanch Current ID Unit 1.3 50 3.5 1.6 2.2 1 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72704 S-40105—Rev. A, 02-Feb-04 www.vishay.com 1 Si4368DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.8 V VDS = 0 V, VGS = "12 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea 30 mA A VGS = 10 V, ID = 25 A 0.0026 0.0032 VGS = 4.5 V, ID = 22 A 0.0029 0.0036 gfs VDS = 15 V, ID = 25 A 150 VSD IS = 2.9 A, VGS = 0 V 0.66 W S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 355 Total Gate Charge Qg 53 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = 15 V, VGS = 0 V, f = 1 MHz pF 850 80 17.5 VDS = 15 V, VGS = 4.5 V, ID = 20 A nC 6.5 1.2 1.8 td(on) 25 38 tr 20 30 172 260 41 62 42 60 Rise Time Turn-Off Delay Time 8340 f = 1 MHz VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.8 IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 3 V 50 40 30 20 2V 10 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 40 30 20 TC = 125_C 10 0 0 Transfer Characteristics 50 I D − Drain Current (A) I D − Drain Current (A) 60 5 25_C −55_C 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 VGS − Gate-to-Source Voltage (V) Document Number: 72704 S-40105—Rev. A, 02-Feb-04 Si4368DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.005 Capacitance 10000 8000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) Ciss 0.004 VGS = 4.5 V 0.003 VGS = 10 V 0.002 0.001 6000 4000 2000 0.000 Coss 0 0 10 20 30 40 50 0 5 Gate Charge VDS = 15 V ID = 20 A 5 15 20 25 30 On-Resistance vs. Junction Temperature 1.6 r DS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 6 10 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 4 3 2 VGS = 10 V ID = 25 A 1.4 1.2 1.0 0.8 1 0 0 15 30 45 60 0.6 −50 75 −25 0 Source-Drain Diode Forward Voltage r DS(on) − On-Resistance ( W ) TJ = 150_C TJ = 25_C 1 75 100 125 150 0.008 ID = 25 A 0.006 0.004 0.002 0.000 0.1 0.00 50 On-Resistance vs. Gate-to-Source Voltage 0.010 60 10 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) Crss 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 72704 S-40105—Rev. A, 02-Feb-04 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4368DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 50 40 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 −0.4 20 −0.6 10 −0.8 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72704 S-40105—Rev. A, 02-Feb-04 Si4368DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72704 S-40105—Rev. A, 02-Feb-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5