Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage 100% RG Tested APPLICATIONS D Synchronous Rectifier D Point-of-Load Synchronous Buck Converter D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 11 14 8 A "50 IDM Continuous Source Current (Diode Conduction)a V 17 ID 2.7 1.40 3.0 1.6 2.0 1.0 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 34 41 67 80 15 19 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71699 S-03662—Rev. B, 14-Apr-03 www.vishay.com 1 Si4866DY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "8 V "100 VDS = 9.6 V, VGS = 0 V 1 VDS = 9.6 V, VGS = 0 V, TJ = 70_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 4.5 V rDS(on) Forward Transconductancea Diode Forward Voltagea V nA mA 40 A VGS = 4.5 V, ID = 17 0.0045 0.0055 VGS = 2.5 V, ID = 14 0.0065 0.008 gfs VDS = 6 V, ID = 17 80 VSD IS = 2.7 A, VGS = 0 V 0.70 1.1 21 30 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time nC 4.6 3.5 2.3 3.9 td(on) 28 42 tr 32 48 82 123 35 53 60 90 Rise Time Turn-Off Delay Time VDS = 6 V, VGS = 4.5 V, ID = 17 A 1.5 VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 2.5 V 40 2V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 125_C 10 25_C -55_C 1.5 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 71699 S-03662—Rev. B, 14-Apr-03 Si4866DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 4000 0.012 3200 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.015 0.009 VGS = 2.5 V 0.006 VGS = 4.5 V Ciss 2400 Coss 1600 0.003 Crss 800 0.000 0 0 10 20 30 40 50 0 2 Gate Charge 8 10 12 On-Resistance vs. Junction Temperature 6 1.6 VDS = 6 V ID = 17 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4 3 2 1 0 0 5 10 15 20 25 VGS = 4.5 V ID = 17 A 1.4 1.2 1.0 0.8 0.6 -50 30 -25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.040 r DS(on) - On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.032 0.024 0.016 ID = 17 A 0.008 0.000 1 0.00 25 TJ - Junction Temperature (_C) Qg - Total Gate Charge (nC) I S - Source Current (A) 4 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71699 S-03662—Rev. B, 14-Apr-03 1.0 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4866DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.4 200 ID = 250 mA 160 Power (W) V GS(th) Variance (V) 0.2 -0.0 120 -0.2 80 -0.4 40 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (sec) TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71699 S-03662—Rev. B, 14-Apr-03