Si6404DQ New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 11 APPLICATIONS 30 0.010 @ VGS = 4.5 V 10 0.014 @ VGS = 2.5 V 8.8 D Battery Switch D Charger Switch D TSSOP-8 D 1 S 2 S 3 G 4 D Si6404DQ 8 D 7 S 6 S 5 D * Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 11 8.6 8.9 6.9 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID A 30 1.5 0.95 1.75 1.08 1.14 0.69 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 55 70 95 115 35 45 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71440 S-03483—Rev. A, 16-Apr-01 www.vishay.com 1 Si6404DQ New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = 250 mA 0.6 Typ Max Unit Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70_C 10 VDS = 5 V, VGS = 10 V nA m mA 20 A VGS = 10 V, ID = 11 A 0.0073 0.009 VGS = 4.5 V, ID = 10 A 0.0084 0.010 VGS = 2.5 V, ID = 8.8 A 0.0116 0.014 gfs VDS = 10 V, ID = 11 A 27 VSD IS = 1.5 A, VGS = 0 V 0.72 1.1 32 48 rDS(on) Forward Transconductancea V VDS = 0 V, VGS = "12 V W W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 10 Rg 7.5 td(on) 35 55 35 55 100 150 50 75 40 85 Gate Resistance Turn-On Delay Time Rise Time VDS = 15 V, VGS = 4.5 V, ID = 11 A tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 8.1 IF = 1.5 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 3 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 2V 12 6 18 12 TC = 125_C 6 25_C 0 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.0 0.5 1.0 –55_C 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Document Number: 71440 S-03483—Rev. A, 16-Apr-01 Si6404DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 6000 VGS = 2.5 V 0.012 5000 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.015 VGS = 4.5 V 0.009 0.006 VGS = 10 V 0.003 Ciss 4000 3000 2000 Coss 1000 0.000 Crss 0 0 6 12 18 24 0 30 6 ID – Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 11 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 18 VDS – Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 11 A 1.6 1.4 1.2 1.0 0.8 0 0 15 30 45 60 0.6 –50 75 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) – On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ – Junction Temperature (_C) 30 I S – Source Current (A) 12 0.04 ID = 11 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71440 S-03483—Rev. A, 16-Apr-01 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si6404DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 60 0.4 50 0.2 40 –0.0 Power (W) V GS(th) Variance (V) ID = 250 mA –0.2 30 –0.4 20 –0.6 10 –0.8 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 TJ – Temperature (_C) 1 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71440 S-03483—Rev. A, 16-Apr-01